基于可控剥离技术的柔性PZT薄膜的制备及其铁电性质
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摘要
可控剥离技术(CST)作为一种薄膜制备方式已被广泛应用于柔性领域,例如硅基柔性太阳电池等。首先采用溶胶-凝胶法先后在普通硅基底上制备镍酸镧(LaNiO3)缓冲层和锆钛酸铅(PZT)薄膜。通过X射线衍射仪(XRD)和扫描电子显微镜(SEM)进行材料表征,发现PZT薄膜结晶良好,而且表面致密均匀,表明LaNiO3缓冲层有利于PZT薄膜的成膜。之后通过基于电镀镍方法的可控剥离技术实现了硅基底柔性PZT薄膜的制备。PZT薄膜弯曲之后,采用铁电测试仪测试了电滞回线。电滞回线表明该PZT薄膜的极化强度随着施加电压的增加而增大,而且随着电压的增加,电滞回线逐渐趋于饱和,饱和极化强度为38μC/cm~2。最终得出该柔性PZT薄膜不仅具有良好的机械性能,而且具有很好的铁电性能。
As a thin film preparation method,the controlled spalling technology(CST)has been widely used in flexible fields,such as silicon-based flexible solar cells and so on.The lanthanum nickel oxide(LaNiO3)buffer layer and pb-based lanthanumdoped zirconate titanates(PZT)thin film were successively prepared on the common silicon substrate by the sol-gel method.The X-ray diffractometer(XRD)and scanning electron microscope(SEM)characterization results show that the PZT thin film has good crystallization behaviour and its surface is dense and uniform,indicating that the LaNiO3 buffer layer is favorable for the growth of the PZT thin film.Then the flexible PZT thin films were fabricated on the silicon substrate by the CST with the electroplating nickel process.After the PZT film bending,the ferroelectric hysteresis loops were measured by the ferroelectric tester.The ferroelectric hysteresis loops indicate that the polarization of the PZT thin film increases with the increase of the applied voltage.And with the increase of the voltage,the ferroelectric hysteresis loops gradually become saturated,and the saturation polarization is 38μC/cm~2.Finally,it is concluded that the flexible PZT thin film has a good mechanical property and a good ferroelectric performance.
As a thin film preparation method,the controlled spalling technology(CST)has been widely used in flexible fields,such as silicon-based flexible solar cells and so on.The lanthanum nickel oxide(LaNiO3)buffer layer and pb-based lanthanumdoped zirconate titanates(PZT)thin film were successively prepared on the common silicon substrate by the sol-gel method.The X-ray diffractometer(XRD)and scanning electron microscope(SEM)characterization results show that the PZT thin film has good crystallization behaviour and its surface is dense and uniform,indicating that the LaNiO3 buffer layer is favorable for the growth of the PZT thin film.Then the flexible PZT thin films were fabricated on the silicon substrate by the CST with the electroplating nickel process.After the PZT film bending,the ferroelectric hysteresis loops were measured by the ferroelectric tester.The ferroelectric hysteresis loops indicate that the polarization of the PZT thin film increases with the increase of the applied voltage.And with the increase of the voltage,the ferroelectric hysteresis loops gradually become saturated,and the saturation polarization is 38μC/cm~2.Finally,it is concluded that the flexible PZT thin film has a good mechanical property and a good ferroelectric performance.
引文
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[4]YUAN S G,WANG J B,ZHONG X L,et al.Size effect on the ultrathin ferroelectric film directly grown on silicon for electronic devices[J].RSC Advances,2013,3(46):24362-24366.
[5]耿文平,乔骁骏,丑修建.PbZr0.3Ti0.7O3薄膜退火工艺优化及铁电畴结构表征[J].微纳电子技术,2018,55(10):746-750.
[6]DAGDEVIREN C,SHI Y,JOE P,et al.Conformal piezoelectric systems for clinical and experimental characterization of soft tissue biomechanics[J].Nature Materials,2015,14(7):728-736.
[7]PARK K I,SON J H,HWANG G T,et al.Highly-efficient flexible piezoelectric PZT thin film nanogenerator on plastic substrates[J].Advanced Materials,2014,26(16):2514-2520.
[8]BEDELL S W,SHAHRJERDI D,HEKMATSHOAR B,et al.Kerf-less removal of Si,Ge,and III-V layers by controlled spalling to enable low-cost PV technologies[J].IEEE Journal of Photovoltaics,2012,2(2):141-147.
[9]YANG X Y,CHENG J R,YU S W,et al.Effect of LaNiO3sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O3thin films grown on LaNiO3-coated Si substrates[J].Journal of Crystal Growth,2008,310(15):3466-3469.