电容对毫微秒瞬变用ZnO-Bi_2O_3-Yb_2O_3基压敏电阻的影响（英文）
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摘要
研究了ZnO-Bi_2O_3-Yb_2O_3基压敏陶瓷在900°C至1050°C温度范围内的显微组织和电学性能变化。结果表明,随着烧结温度的升高,电容效应从0.460 nF降低到0.321 nF。此外,压敏电阻的晶粒大小从6.8μm增大到9.8μm。这种小的晶粒使样品在900°C烧结时获得更好的电压梯度,约为895 V/mm,而当烧结温度升高到1050°C时,电压梯度迅速下降到410 V/mm。另外,非线性指数增加到最大值36.0,泄漏电流减少到0.026 mA/cm~2。然而,随着温度的升高,压敏电阻的密度从5.41 g/cm~3降低到5.24g/cm~3。在此基础上,考察了压敏电阻电容和高压梯度的影响,从而提高了压敏电阻组件在侵入纳秒瞬态下从非导电态转变到导电态的转变速度。
The microstructure and electrical properties of ZnO-Bi_2O_3-Yb_2O_3 based varistor ceramics were investigated with various temperature effects from 900 °C to 1050 °C. From the results, it was observed that the increase of sintering temperature offers a reduced capacitive effect from 0.460 nF to 0.321 nF. Furthermore, the grain sizes of varistors were varied from 6.8 μm to 9.8 μm. The consequence of such smaller grain sizes provided a better voltage gradient of about 895 V/mm for the disc sintered at 900 °C and fallen drastically to 410 V/mm for the sample sintered at 1050 °C. In addition, there was an increase of non-linearity index to a maximum value of 36.0 and reduced leakage current of 0.026 mA/cm~2. However, the density of the varistor decreased with an increase of temperature from 5.41 g/cm~3 to 5.24 g/cm~3. With this base, the influence of varistor capacitance and high voltage gradient were scrutinized and it led an improved transition speed of the varistor assembly from non-conduction to conduction mode during intruding nanosecond transients.
The microstructure and electrical properties of ZnO-Bi_2O_3-Yb_2O_3 based varistor ceramics were investigated with various temperature effects from 900 °C to 1050 °C. From the results, it was observed that the increase of sintering temperature offers a reduced capacitive effect from 0.460 nF to 0.321 nF. Furthermore, the grain sizes of varistors were varied from 6.8 μm to 9.8 μm. The consequence of such smaller grain sizes provided a better voltage gradient of about 895 V/mm for the disc sintered at 900 °C and fallen drastically to 410 V/mm for the sample sintered at 1050 °C. In addition, there was an increase of non-linearity index to a maximum value of 36.0 and reduced leakage current of 0.026 mA/cm~2. However, the density of the varistor decreased with an increase of temperature from 5.41 g/cm~3 to 5.24 g/cm~3. With this base, the influence of varistor capacitance and high voltage gradient were scrutinized and it led an improved transition speed of the varistor assembly from non-conduction to conduction mode during intruding nanosecond transients.
引文
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[19]RAJU K,PRASAD V,RAMASAMY J.Development of metal oxide arrester block using rare earth element for very fast transient overvoltage applications[J].Turkish Journal of Electrical Engineering and Computer Sciences,2017,25:4893-4900.DOI:10.3906/elk-1611-56,2017.
[2]XU Dong,SHI Xiao-feng,CHENG Xiao-nong,YANG Juan,FAN Yue-e,YUAN Hong-ming,SHI Li-yi.Microstructure and electrical properties of Lu2O3-doped ZnO-Bi2O3-based varistor ceramics[J].Transactions of Nonferrous Metals Society of China,2010,20(12):2303-2308.
[3]XU Dong,TANG Dong-mei,LIN Yuan-hua,JIAO Lei,ZHAO Guo-ping,CHENG Xiao-nong.Influence of Yb2O3doping on microstructural and electrical properties of ZnO-Bi2O3-based varistor ceramics[J].Journal of Central South University,2012,19:1497-1502.
[4]XU Dong,TANG Dong-mei,LIN Yuan-hua,JIAO Lei,ZHAO Guo-ping CHENG Xiao-nong.Microstructure and electrical properties of Er2O3-Doped Zn O-Based varistor ceramics prepared by high-energy ball milling[J].Journal of Rare Earth,2007,25:120-123.
[5]k E Lei,YUAN Yan-hong,ZHAO Hua,MA Xue-ming.Influence of rare-earth doping on the electrical properties of high voltage gradient Zn O varistors[J].Ceramics-Silikáty,2013,57(1):53-57.
[6]BAI Hai-rui,LI Shu-hui,ZHAO Yun-han,XU Zhi-jun,CHURui-qing,HAO Ji-gong,CHEN Chong,LI Huai-yong,GONG Yun-yun,LI Guo-rong.Influence of of Cr2O3 on highly nonlinear properties and low leakage current of ZnO-Bi2O3 varistor ceramics[J].Ceramic International,2016,42(9):10547-10550.
[7]VALSALAL P,USA S,UDAYAKUMAR K.Response of metal oxide arrester in gas-insulated substation and methods to improve its dynamic characteristics[J].IET Science Measurement&Technology,2012,6(2):222-228.
[8]VALSALAL P,USA S,UDAYAKUMAR K.Importance of capacitance on metal oxide arrester block model for VFTOapplications[J].IEEE Transactions on Power Delivery,2011,26(2):1294-1295.
[9]VALSALAL P,USA S,UDAYAKUMAR K.Modelling of metal oxide arrester for very fast transients[J].IET Science Measurement&Technology,2011,5(4):140-146.
[10]PRASAD V.Possible measures to enhance the performance of Metal-Oxide arresters in the EHV network under very fast transients[J].IEEE Transactions on Power Delivery,2015,30(2):783-790.
[11]CHEN Jie,GUO Jie,QIU Ai-ci,LI Ke-lun,XIE Yan-zhao,CUI Long-yue,WANG Lei,CHEN Zhi-qiang.Behavior comparison of metal oxide Arrester blocks when excited by VFTO and lightning[J].IEEE Transactions on Electromagnetic Compatibility,2015,57(6):1608-1615.
[12]XU Dong,WU Jie-ting,JIAO Lei,XU Hong-xing,ZHANGPei-mei,YU Ren-hong,CHENG Xiao-nong.Highly nonlinear property and threshold voltage of Sc2O3 doped ZnO-Bi2O3-based varistor ceramics[J].Journal of Rare Earth,2013,31(2):158-163.
[13]HE Jin-liang,LIU Jun,HU Jun,LONG Wang-cheng.ACageing characteristics of Y2O3-doped ZnO varistors with high voltage gradient[J].Materials Letters,2011,20(12):2595-2597.
[14]SHICHIMIYA S,YAMAGUCHI M,FURUSE N,KOBAYASHI M,ISHIBE S.Development of advanced arresters for GIS with new zinc-oxide elements[J].IEEETransactions on Power Delivery,1998,13(2):465-471.
[15]HE Jin-liang,HU Jun,LIN Yuan-hua.Zn O varistors with high voltage gradient and low leakage current by doping rare-earth oxide[J].Science in China Series E:Technological Sciences,2008,51(6):693-701.
[16]NAHM Choon-woo.Nonlinear behavior of Tb4O7-modified ZnO-Pr6O11-based ceramics with high breakdown field[J].Journal of Rare Earth,2013,31(3):273-280.
[17]RAJU K,PRASAD V,RAMASAMY J.Performance improvement of metal oxide arrester for very fast transients[J].IET Science Measurement&Technology,2017,11(4):438-444.
[18]RAJU K,PRASAD V,RAMASAMY J.High gradient metal oxide surge arrester block for VFTO applications[J].Journal of Electrical Engineering,2017,17(1):411-417.
[19]RAJU K,PRASAD V,RAMASAMY J.Development of metal oxide arrester block using rare earth element for very fast transient overvoltage applications[J].Turkish Journal of Electrical Engineering and Computer Sciences,2017,25:4893-4900.DOI:10.3906/elk-1611-56,2017.