清洗工艺对金属辅助刻蚀制备黑硅及其光伏器件的影响
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摘要
为了减少黑硅表面缺陷对黑硅太阳电池性能的影响,本文以金属纳米颗粒辅助刻蚀制备的156 mm×156 mm多晶黑硅为研究对象,分别采用传统RCA清洗工艺中SC1清洗方法及其改进方法清洗黑硅,并通过SEM、少子寿命、IV、QE等手段表征黑硅微观结构及其光伏器件电性能。结果表明:改进清洗方法比SC1具有更好的清洗效果,能够有效去除黑硅中的金属残留,同时修正黑硅表面微结构,黑硅的少子寿命由1.98μs提高到3.09μs。对于156mm×156mm多晶黑硅太阳电池,改进方法清洗的黑硅电池比SC1方法清洗黑硅太阳电池短路电流提升62m A,平均转化效率提升了0.16%,达18.01%。
To reduce the effect of black silicon surface defect on black silicon solar cell performance,two methods of cleaning the 156 mm × 156 mm muti-crystaline black silicon prepared by metal nano particles assisted etching are studied. The SC1 cleaning method in traditional RCA process for semiconductor industry and an optimized method are used to clean the black silicon. The black silicon microstructure or the electrical properties of its photovoltaic device were characterized by SEM,minority carrier life time,I~ V and QE. The results show that,comparing with the SC1 method,the optimized cleaning method is more effective to removing the metal residue in the black silicon and modifying the surface microstructure of the black silicon,and increase the minority carrier lifetime from 1. 98μs to 3. 09μs. And the optimized method have a 62 m A increase on short circuit current as well as a 0. 16% increase on average conversion efficiency for the 156 mm × 156 mm muti-crystaline black silicon solar cells with 18. 01% average conversion efficiency.
To reduce the effect of black silicon surface defect on black silicon solar cell performance,two methods of cleaning the 156 mm × 156 mm muti-crystaline black silicon prepared by metal nano particles assisted etching are studied. The SC1 cleaning method in traditional RCA process for semiconductor industry and an optimized method are used to clean the black silicon. The black silicon microstructure or the electrical properties of its photovoltaic device were characterized by SEM,minority carrier life time,I~ V and QE. The results show that,comparing with the SC1 method,the optimized cleaning method is more effective to removing the metal residue in the black silicon and modifying the surface microstructure of the black silicon,and increase the minority carrier lifetime from 1. 98μs to 3. 09μs. And the optimized method have a 62 m A increase on short circuit current as well as a 0. 16% increase on average conversion efficiency for the 156 mm × 156 mm muti-crystaline black silicon solar cells with 18. 01% average conversion efficiency.
引文
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