室温条件下射频磁控溅射法制备AZO薄膜的结构与光电性能（英文）
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摘要
采用高致密度靶材在室温条件下玻璃衬底上RF磁控溅射制备铝掺杂氧化锌(AZO)薄膜。用X射线衍射仪、冷场发射扫描电子显微镜、紫外可见光分光光度计、四探针测试仪和霍尔测试仪分析表征薄膜的显微组织、表面形貌和光电学性能。结果表明,所制备的薄膜均为多晶六方纤锌矿结构,溅射功率对AZO薄膜的光电学性能,尤其是电学性能有重要影响。不同溅射功率下薄膜可见光平均透过率均大于85%,当溅射功率为200 W时,获得最小电阻率4.5×10~(-4)?·cm和87.1%的透过率。AZO薄膜禁带宽度随溅射功率不同在3.48~3.68 e V范围内变化。
Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10~(-4) ?·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 e V.
Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10~(-4) ?·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 e V.
引文
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[14]WU H W,YANG R Y,HSIUNG C M,CHU C H.Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power[J].Journal of Materials Science-Materials in Electronics,2013,24:166-171.
[15]YANG Wei-feng,LIU Zhu-gang,PENG Dong-liang,ZHANG Feng,HUANG Huo-lin,XIE Yan-nan,WU Zheng-yun.Room-temperature deposition of transparent conducting Al-doped Zn O films by RFmagnetron sputtering method[J].Applied Surface Science,2009,255:5669-5673.
[16]FLICKYNGEROVE S,SHTEREVA K,STENOVA V,HASKO D,NOVOTNY I,TVAROZEK V,SUTTA P,VAVRINSKY E.Structural and optical properties of sputtered Zn O thin films[J].Applied Surface Science,2008,254:3643-3647.
[17]ELLMER K.Magnetron sputtering of transparent conductive zinc oxide:Relation between the sputtering parameters and the electronic properties[J].Journal of Physics D-Applied Physics,2000,33:R17-R32.
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[19]TOSAN J L,DURAND B,ROUBIN M,CHASSAGNEUX F,BERTIN F.Coupled Raman and infrared spectroscopic study of acetic or formic zirconyl chloride aqueous solutions[J].Journal of Non-Crystalline Solids,1994,168:23-32.
[20]CHEN Jan,SUN Yi-hua,LüXin,LI De-rong,FANG Liang,WANGHai-lin,SUN Xiao-hua,HUANG Cai-hua,YU Hai-zhou,FENG Ping.Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature[J].Applied Surface Science,2014,317:1000-1003.
[21]JUN M C,PARK S U,KOH J H.Comparative studies of Al-doped Zn O and Ga-doped Zn O transparent conducting oxide thin films[J].Nanoscale Research Letters,2012,7:639-644.
[22]PARK K C,MA D Y,KIM K H.The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering[J].Thin Solid Films,1997,305:201-209.
[23]LI C,FURUTA M,MATSUDA T,HIRAMATSU T,FURUTA H,HIRAO T.Effects of substrate on the structural,electrical and optical properties of Al-doped Zn O films prepared by radio frequency magnetron sputtering[J].Thin Solid Films,2009,517:3265-3268.
[24]SRIKANT V,CLARKE D.On the optical band gap of zinc oxide[J].Journal of Applied Physics,1998,83:5447-5451.
[25]GRILLI M L,SYTCHKOVA A,BOYCHEVA S,PIEGARI A.Transparent and conductive Al-doped Zn O films for solar cells applications[J].Physica Status Solidi A-Applications and Materials Science,2013,210:748-754.
[2]SUTTHANA S,HONGSITH N,CHOOPUN S.AZO/Ag/AZOmultilayer films prepared by DC magnetron sputtering for dye-sensitized solar cell application[J].Current Applied Physics,2010,10:813-816.
[3]MIAO Da-gang,JIANG Shou-xiang,SHANG Song-min,CHENZhuo-ming.Highly transparent and infrared reflective AZO/Ag/AZOmultilayer film prepared on PET substrate by RF magnetron sputtering[J].Vacuum,2014,106:1-4.
[4]WANG Tao,DIAO Xun-gang,DING Peng.Thermal stability of electrical properties of Zn O:Al films deposited by room temperature magnetron sputtering[J].Journal of Alloys and Compounds,2011,509:4910-4915.
[5]CHOI Y S,KIM J B,HAN J G.Optical absorption spectroscopy of facing targets and conventional magnetron sputtering during process of Al-doped Zn O films[J].Surface and Coatings Technology,2014,254:371-375.
[6]SHI Qian,ZHOU Ke-song,DAI Ming-jiang,HOU Hui-jun,LINSong-sheng,WEI Chun-bei,HU Fang.Room temperature preparation of high performance AZO films by MF sputtering[J].Ceramics International,2013,39:1135-1141.
[7]ZHOU Hong-biao,ZHANG Hua-yu,TAN Man-lin,ZHANG W J,ZHANG W L.Effects of sputtering pressure on properties of Al doped Zn O thin films dynamically deposited by rf magnetron sputtering[J].Materials Research Innovations,2012,16:390-394.
[8]ZHANG Zhi-yun,BAO Chong-gao,MA Sheng-qiang,ZHANG Li-li,HOU Shu-zeng.Effects of deposition power and pressure on the crystallinity of Al-doped Zn O thin films at glass substrates by low temperature RF magnetron sputtering[J].Journal of the Australian Ceramic Society,2012,48:214-222.
[9]CHO H J,LEE S U,HONG B,SHIN Y D,JU J Y,KIM H D,PARKM,CHOI W S.The effect of annealing on Al-doped Zn O films deposited by RF magnetron sputtering method for transparent electrodes[J].Thin Solid Films,2010,518:2941-2944.
[10]BERASATEGUI E G,ZUBIZARRETA C,BAYON R,BARRIGA J,BARROS R,MARTINS R,FORTUNATO E.Study of the optical,electrical and corrosion resistance properties of AZO layers deposited by DC pulsed magnetron sputtering[J].Surface and Coatings Technology,2015,271:141-147.
[11]MIAO Da-gang,JIANG Shou-xiang,ZHAO Hong-mei,SHANGSong-min,CHEN Zhuo-ming.Characterization of AZO and Ag based films prepared by RF magnetron sputtering[J].Journal of Alloys and Compounds,2014,616:26-31.
[12]KUO S Y,LIU K C,LAI F I,YANG J F,CHEN W C,.HSIEH M Y,LIN H I,LIN W T.Effects of RF power on the structural,optical and electrical properties of Al-doped zinc oxide films[J].Microelectronics Reliability,2010,50:730-733.
[13]SAAD M,KASSIS A.Effect of rf power on the properties of rf magnetron sputtered Zn O:Al thin films[J].Materials Chemistry and Physics,2012,136:205-209.
[14]WU H W,YANG R Y,HSIUNG C M,CHU C H.Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power[J].Journal of Materials Science-Materials in Electronics,2013,24:166-171.
[15]YANG Wei-feng,LIU Zhu-gang,PENG Dong-liang,ZHANG Feng,HUANG Huo-lin,XIE Yan-nan,WU Zheng-yun.Room-temperature deposition of transparent conducting Al-doped Zn O films by RFmagnetron sputtering method[J].Applied Surface Science,2009,255:5669-5673.
[16]FLICKYNGEROVE S,SHTEREVA K,STENOVA V,HASKO D,NOVOTNY I,TVAROZEK V,SUTTA P,VAVRINSKY E.Structural and optical properties of sputtered Zn O thin films[J].Applied Surface Science,2008,254:3643-3647.
[17]ELLMER K.Magnetron sputtering of transparent conductive zinc oxide:Relation between the sputtering parameters and the electronic properties[J].Journal of Physics D-Applied Physics,2000,33:R17-R32.
[18]LOTGERING F K.Topotactical reactions with ferromagnetic oxides having hexagonal crystal structures[J].Journal of Inorganic and Nuclear Chemistry,1959,9:113-123.
[19]TOSAN J L,DURAND B,ROUBIN M,CHASSAGNEUX F,BERTIN F.Coupled Raman and infrared spectroscopic study of acetic or formic zirconyl chloride aqueous solutions[J].Journal of Non-Crystalline Solids,1994,168:23-32.
[20]CHEN Jan,SUN Yi-hua,LüXin,LI De-rong,FANG Liang,WANGHai-lin,SUN Xiao-hua,HUANG Cai-hua,YU Hai-zhou,FENG Ping.Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature[J].Applied Surface Science,2014,317:1000-1003.
[21]JUN M C,PARK S U,KOH J H.Comparative studies of Al-doped Zn O and Ga-doped Zn O transparent conducting oxide thin films[J].Nanoscale Research Letters,2012,7:639-644.
[22]PARK K C,MA D Y,KIM K H.The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering[J].Thin Solid Films,1997,305:201-209.
[23]LI C,FURUTA M,MATSUDA T,HIRAMATSU T,FURUTA H,HIRAO T.Effects of substrate on the structural,electrical and optical properties of Al-doped Zn O films prepared by radio frequency magnetron sputtering[J].Thin Solid Films,2009,517:3265-3268.
[24]SRIKANT V,CLARKE D.On the optical band gap of zinc oxide[J].Journal of Applied Physics,1998,83:5447-5451.
[25]GRILLI M L,SYTCHKOVA A,BOYCHEVA S,PIEGARI A.Transparent and conductive Al-doped Zn O films for solar cells applications[J].Physica Status Solidi A-Applications and Materials Science,2013,210:748-754.