玻璃衬底温度对溅射制备SnO_2-Al_2O_3双金属元素薄膜电学及光学特性的影响（英文）
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摘要
采用射频(RF)磁控溅射法在玻璃衬底上制备了SnO_2-Al_2O_3(SAO)双金属元素薄膜。通过扫描电子显微镜SEM,X射线衍射仪XRD、四探针测量,UV-IR及光致发光(PL)谱研究了衬底温度对薄膜表面形貌、晶体微结构、电学及光学特性的影响。当衬底温度升高时,SAO薄膜的晶粒尺寸增大。SEM及XRD结果显示的均质表面结构及大晶粒尺寸表明薄膜具有良好的表面形貌和结晶度。在400~800 nm的可见光范围,薄膜的透射率可达80%~90%,计算得到薄膜的带隙4.11~4.14 eV,表面电阻7.0×10~4~9.4×10~4W/。通过合理选择溅射温度,薄膜的带隙可得到增宽,表面电阻可被降低。测量还发现,所制备SAO薄膜的PL谱在UV及红光带发光,这种多晶SAO薄膜可用于透明导电氧化物(TCO)薄膜,太阳能电池窗、传感器及光发射器。
SnO_2-Al_2O_3(SAO)binary thin films were prepared on slide glasses substrates by RF magnetron sputtering.The influence of the substrate temperature on the surface morphology,crystal structures,electrical and optical properties were analyzed by the scanning electron microscopy(SEM)images,X-ray diffraction(XRD)patterns,four-probe measuring,UV-IR and photoluminescence(PL)spectra.With increasing substrate temperature,the grain sizes of SAO binary films are increased.Uniform patterns and large size grains indicate a better surface morphology and crystallinity of SAO films,which are verified by SEM and XRD investigations.All the films have a high average transmittivity of~80%~90%in visible light region 400~800 nm.The calculated band gapis in a range of~4.11~4.14 eV,and the measured sheet resistances of SAO films are in a range of~7.0×10~4 to~9.4×10~4?/□.At proper sputtering temperature,the band gap can be widened,and the sheet resistances can be reduced.The PL emissions from the films in UV and red bands were also observed.These polycrystalline SAO films can be used in the application of transparent conductive oxide(TCO)films,solar cell windows,sensors,as well as lighter emitters.
SnO_2-Al_2O_3(SAO)binary thin films were prepared on slide glasses substrates by RF magnetron sputtering.The influence of the substrate temperature on the surface morphology,crystal structures,electrical and optical properties were analyzed by the scanning electron microscopy(SEM)images,X-ray diffraction(XRD)patterns,four-probe measuring,UV-IR and photoluminescence(PL)spectra.With increasing substrate temperature,the grain sizes of SAO binary films are increased.Uniform patterns and large size grains indicate a better surface morphology and crystallinity of SAO films,which are verified by SEM and XRD investigations.All the films have a high average transmittivity of~80%~90%in visible light region 400~800 nm.The calculated band gapis in a range of~4.11~4.14 eV,and the measured sheet resistances of SAO films are in a range of~7.0×10~4 to~9.4×10~4?/□.At proper sputtering temperature,the band gap can be widened,and the sheet resistances can be reduced.The PL emissions from the films in UV and red bands were also observed.These polycrystalline SAO films can be used in the application of transparent conductive oxide(TCO)films,solar cell windows,sensors,as well as lighter emitters.
引文
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2 Elangovan E,Singh M P,Ramamurthi K.Mater Sci Eng B[J],2004,113:143
3 Hichou A,Kachouane A,Bubendorff J et al.Thin Solid Films[J],2004,458:263
4 Xu Z,Deng H,Li Y et al.Mater Sci Semicond Process[J],2006(9):132
5 Moharrami F,Bagheri-Mohagheghi M,Azimi-Juybari H et al.Phys Scr[J]2012,85:015 703
6 Yoshioka T,Ogawa J,Yuge M et al.2015 IEEE International Meeting[C].Kansai(IMFEDK):IEEE,2015
7 Czapla A,Kusior E,Bucko M.Thin Solid Films[J],1989,182:15
8 Rakshani A,Makdisi Y,Ramazanyan H.J Appl Phys[J],1998,83:1049
9 Hayakawa T,Enomoto T,Nogami M.J Mater Res[J],2002,17:1305
10 Liu B,Cheng C,Chen R et al.J Phys Chem C[J],2010,114:3407
11 Nehru L,Swaminathan V,Sanjeeviraja C.Am J Mater Sci[J],2012,2(2):6
12 Kim T,Lee D,Yoon Y.J Appl Phys[J],2000,88:3759
13 Cabot A,Arbiol J,Ferre R et al.J Appl Phys[J],2004,95:2178
14 Yang Y,Tay B,Sun X et al.Appl Phys Lett[J],2007,91:071921