溅射功率对Fe_(81)Ga_(19)薄膜结构和磁性的影响
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Effects of Sputtering Power on Structure and Magnetic Properties of Fe_(81)Ga_(19) Films
  • 作者:马亚茹 ; 曹梦雄 ; 王兴宇 ; 马春林 ; 周卫平 ; 谭伟石
  • 英文作者:MA Yaru;CAO Mengxiong;WANG Xingyu;MA Chunlin;ZHOU Weiping;TAN Weishi;Key Labo ratory of Soft Chemistry and Functional Materials of Ministry of Education, Department of Applied Physics,College of Science, Nanjing University of Science and Technology;College of Communication and Electronic Engineering, Hunan City University;
  • 关键词:Fe_(81)Ga_(19)薄膜 ; RF磁控溅射 ; 溅射功率 ; 微观结构 ; 磁性
  • 英文关键词:Fe_(81)Ga_(19)film;;RF magnetron sputtering deposition;;sputtering power;;microstructure;;magnetic properties
  • 中文刊名:SJGY
  • 英文刊名:Hot Working Technology
  • 机构:南京理工大学理学院应用物理系软化学与功能材料教育部重点实验室;湖南城市学院信息与电子工程学院;
  • 出版日期:2017-11-24 15:46
  • 出版单位:热加工工艺
  • 年:2017
  • 期:v.46;No.476
  • 基金:国家自然科学基金资助项目(11079022)
  • 语种:中文;
  • 页:SJGY201722039
  • 页数:4
  • CN:22
  • ISSN:61-1133/TG
  • 分类号:157-159+162
摘要
采用射频磁控溅射技术在Sr Ti O_3(100)衬底上制备Fe_(81)Ga_(19)薄膜。利用XRD、AFM和VSM表征了Fe_(81)Ga_(19)薄膜的生长取向、内应力、表面形貌和磁性,研究了不同溅射功率(60~100 W)对Fe_(81)Ga_(19)薄膜结构和磁性能的影响。结果表明,所有薄膜主要以A_2相和L1_2相存在。随着溅射功率的增大,A_2相衍射峰的强度缓慢降低,内应力显著增加,表面粗糙度降低,薄膜的剩余磁化强度和饱和磁化强度明显减小,而矫顽力保持不变,都为50 Oe。
        Fe_(81)Ga_(19) thin films were deposited on SrTiO_3(100) substrate by RF magnetron sputtering technique. In order to investigate the effects of sputtering power(60-100 W) on the structure and magnetic properties of Fe_(81)Ga_(19) thin films, the growth orientation, internal stress, surface morphology and magnetic properties of Fe_(81)Ga_(19) films were characterized by X-ray diffraction(XRD), atomic force microscopy(AFM) and vibrating sample magnetometer(VSM). The results show that A_2 and L_(12) phases are main phases in all of these films. With the increase of sputtering power, the intensity of the diffraction peak of the A_2 phase decreases slowly, the internal stress gradually decreases, the surface roughness increases, and the residual magnetization and saturation magnetization of the deposited film decrease obviously, but the coercive force retains the same value, which is 50 Oe.
引文
[1]Wilson S A,Jourdain R P J,Zhang Q,et al.New materials for micro-scale sensors and actuators:An engineering review[J].Materials Science&Engineering,2009,56(1):120-129.
    [2]Olabi A G,Grunwald A.Design and application of magnetostrictive materials[J].Materials&Design,2008,29(2):469-483.
    [3]Braghin F,Cinquemani S,Resta F.A model of magnetostrictive actuators for active vibration control[J].Sensors&Actuators A Physical,2011,165(2):342-350.
    [4]谢海涛,斯永敏,杨德明,等.超磁致伸缩薄膜材料及其应用[J].中国有色金属学报,2000(S1):266-270.
    [5]潘津,张晨曙,罗亮,等.磁控溅射制备Fe-Ga薄膜研究[J].热加工工艺,2013,42(16):123-125.
    [6]Wa ng B W,Li S Y,Zhou Y,et al.Structure,magnetic properties and magnetostriction of Fe81Ga19 thin films[J].Journal of Magnetism&Magnetic Materials,2008,320(5):769-773.
    [7]潘津.Fe-Ga合金和Fe-Ga薄膜的组织成分和性能研究[D].南昌:南昌航空大学,2013.
    [8]Butera A,Gómez J,Barnard J A,et al.Magnetic anisotropy in Fe81Ga19/Mg O(100)films sputtered at different powers[J].Physica B Condensed Matter,2006,384(1):262-264.
    [9]晏建武,彭阿芳,罗亮等.热处理对Fe84Ga16合金薄膜中内应力的影响[J].金属热处理,2015(4):85-88.
    [10]Nivedita L R,Kumar V V S,Asokan K,et al.Growth and magnetic properties of RF sputtered Fe-Ga thin films[J].Mat Res,2015,18(5):946-952.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700