RF磁控溅射沉积压强对InGaZnO_4薄膜特性的影响
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摘要
采用射频(RF)磁控溅射沉积方法,在室温不同压强下在石英玻璃衬底上制备出高透光率与较好电学性质的透明氧化物半导体InGaZnO4(IGZO)薄膜,并对薄膜进行X线衍射(XRD)、生长速率、电阻率和透光率的测试与表征.结果表明,实验所获样品IGZO薄膜为非晶态,薄膜最小电阻率为1.3×10-3Ω·cm.根据光学性能测试结果,IGZO薄膜在200~350nm的紫外光区有较强吸收,在400~900nm的可见光波段的透过率为75%~97%.
The InGaZnO4 films with high transmittance and better electrical properties were grown on aquartz glass substrate at room temperature under different pressures by RF magnetron sputtering deposition method.The X-ray diffraction pattern,the growth rate of the film,the resistivity and the light transmittance were measured.The results indicated that the IGZOfims was amorphous,and the minim resistivity was 1.3×10-3Ω·cm.The abrupt absorption edge of the film appeared at about 200—350nm,and the film presented a high transmittance of 75%—97%in the visible range from 400 to 900nm.
The InGaZnO4 films with high transmittance and better electrical properties were grown on aquartz glass substrate at room temperature under different pressures by RF magnetron sputtering deposition method.The X-ray diffraction pattern,the growth rate of the film,the resistivity and the light transmittance were measured.The results indicated that the IGZOfims was amorphous,and the minim resistivity was 1.3×10-3Ω·cm.The abrupt absorption edge of the film appeared at about 200—350nm,and the film presented a high transmittance of 75%—97%in the visible range from 400 to 900nm.
引文
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[4]LIM W,JANG J H,KIM S H,et al.High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates[J].Appl Phys Lett,2008,93:082102-1-082102-3.
[5]LIM W,DOUGLAS E A,KIM S H,et al.Low-temperature-fabricated InGaZnO4thin film transistors on polyimide clean-room tape[J].Appl Phys Lett,2008,93:252103-1-252103-3.
[6]JUNG C H,KIM D J,KANG Y K,et al.Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications[J].Thin Solid Films,2009,517(14):4078-4081.
[7]SURESHA,GOLLAKOTA P,WELLENIUS P,et al.Transparent,high mobility InGaZnO thin films deposited by PLD[J].Thin Solid Films,2008,516(7):1326-1329.
[8]武德起,姚金城,赵红生,等.高介电栅介质ZrO2薄膜的物理电学性能[J].河北大学学报:自然科学版,2009,29(5):484-488,554.WU Deqi,YAO Jingcheng,ZHAO Hongsheng,et al.Physical and electrical properties of ZrO2gate dielectrics film[J].Journal of Hebei University:Nature Science Edition,2009,29(5):484-488,554.
[9]HOFFMAN R L,NORRIS B J,WAGER J F.ZnO-based trans-parent thin-film transistors[J].Appl Phys Lett,2003,82(5):733-735.
[10]JEONG I K,PARK H L,MHO S I,et al.Photoluminescence of ZnGa2O4 mixed with InGaZnO4[J].SolidState Commun,1998,108(11):823-826.
[11]KSAHU R,VISPUTE R D,DHAR S,et al.Enhanced conductivity of pulsed laser deposited n-InGaZn6O9films and its rectifying characteristics with p-SiC[J].Thin Solid Films,2009,517(5):1829-1832.
[12]KIM H,HORWITZ J S,KIM W H,et al.Doped ZnO thin films as anode materials for organic light emitting diyotes[J].Thin Solid Films,2002,420-421:539-543.
[13]ZHANG X Y,DHAWAN A,WELLENIUS P,et al.Planar ZnO ultraviolet modulator[J].Appl Phys Lett,2007,91(7):071107.
[14]杨义发,龙华,杨光,等.温度对飞秒激光沉积ZnO/Si薄膜的结构和性能的影响[J].中国激光,2007,34(9):1282-1286.YANG Yifa,LONG Hua,YANG Guang,et al.Effect of temperature on structure and properties of femtosecond laser deposited silicon based zinc oxide thin films[J].Chinese J Laser,2007,34(9):1282-1286.
[15]ABDUEV A K,AKHMEDOV A K,ASVAROV A S.The structural and electrical properties of Ga-doped ZnO and Ga,B codoped ZnO thin films:The effects of additional boron impurity[J].Solar Energy Materials,2007,91(4):258-260.
[16]KUWAHARA K,FUJIYAMA H.Application of the ChildLangmuir law to magnetron discharge plasmas[J].IEEE Transactions on Plasma Science,1994,22(4):442-448.
[17]许积文,王华,任明放,等.氩气压强对直流磁控溅射ZnO:Al薄膜结构和性能的影响[J].材料科学与工程,2007,25(5):766-767