国外GaN功率器件衬底材料和外延技术研发现状
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摘要
GaN基功率器件的衬底和外延技术的发展对于器件性能的提升和成本的降低起着非常重要的作用。介绍了国外SiC基、Si基以及新型金刚石基GaN功率器件衬底材料和GaN外延技术的研发现状。重点讨论了大尺寸衬底技术(6英寸SiC衬底、8英寸Si衬底)、GaNHEMT与SiCMOS器件异质集成技术以及金刚石基GaNHEMT材料集成技术的研发进展。分析了GaN功率器件材料技术的发展趋势,认为更大尺寸更高质量衬底和外延材料制作、外延技术的改进、金刚石等新型衬底材料研发以及GaN基材料与Si材料的异质集成技术等将是未来研究的重点。
The development of gallium nitride( Ga N) substrates and epitaxial materials of Ga Nbased power devices is very important for the performance improvement and cost reduction of the Ga N devices. The state of art of the substrate material and epitaxial technology for Ga N power devices with Si C,Si and new diamond substrates in foreign countries is introduced. The research progress of the growth of large scale substrate wafers( 6-inch Si C substrate wafer and 8-inch Si substrate wafer),novel heterogeneous integration technology of Ga N HEMT and Si CMOS devices,and diamond-based Ga N material integration technology are discussed emphatically. Development of larger size,higher quality substrate materials technology,improved epitaxy technology,new Ga N substrate materials such as diamand technology and heterogeneous integration of Ga N HEMT and Si CMOS devices are the main development tendencies for Ga N material technology of the power devices.
The development of gallium nitride( Ga N) substrates and epitaxial materials of Ga Nbased power devices is very important for the performance improvement and cost reduction of the Ga N devices. The state of art of the substrate material and epitaxial technology for Ga N power devices with Si C,Si and new diamond substrates in foreign countries is introduced. The research progress of the growth of large scale substrate wafers( 6-inch Si C substrate wafer and 8-inch Si substrate wafer),novel heterogeneous integration technology of Ga N HEMT and Si CMOS devices,and diamond-based Ga N material integration technology are discussed emphatically. Development of larger size,higher quality substrate materials technology,improved epitaxy technology,new Ga N substrate materials such as diamand technology and heterogeneous integration of Ga N HEMT and Si CMOS devices are the main development tendencies for Ga N material technology of the power devices.
引文
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[26]ISHIDA T.Ga N HEMT technologies for space and radio applications[J].Microwave Journal,2011,54(8):56-61.
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[29]HOKE W E,KENNEDY T D,TORABI A,et al.Highly uniform Al Ga N/Ga N HEMT films grown on200 mm silicon substrates by plasma molecular beam epitaxy[J].Journal of Vacuum Science&Technology B,2014(32):030605.
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[31]LU B,PALACIOS T.High breakdown(>1 500 V)AlGa N/Ga N HEMTs by substrate-transfer technology[J].IEEE Electron Device Letters,2010,31(9):951-953.
[32]CHUNG J W,RYU K,LU B,et al.Ga N-on-Si technology,A new approach for advanced devices in energy and communications[C]∥Proceedings of the European Solid-State Device Research Conference(ESSDERC).2010:52–56.
[33]ROSKER M J.The DARPA compound semiconductors on silicon(COSMOS)program[C]∥Proceedings of CS MANTECH Conference.Chicago,Illinois,USA,2008.
[34]GREEN D S,DOHRMAN C L,CHANG T H.The DARPA diverse accessible heterogeneous integration(DAHI)program:status and future directions[C]∥Proceedings of CS MANTECH Conference.Denver,Colorado,USA,2014:343-346.
[35]KAZIOR T E.Beyond CMOS:heterogeneous integration of III-V devices,RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems[EB/OL].(2014-02-01)[2015-07-02]http:∥rsta.royalsocietypublishing.org/content/372/2012/20130105.
[36]CHUNG J W,LEE J,PINER E L,et al.Seamless on-wafe integration of Si(100)MOSFETs and Ga N HEMTs[J].IEEE Electron Device Letters,2009,30(10):1015-1017.
[37]LEE H S,RYU K,SUN M,et al.Wafer-level heterogeneous integration of Ga N HEMTs and Si(100)MOSFETs[J].IEEE Electron Device Letters,2012,33(2):200-202.
[38]HOKE W E,CHELAKARA R V,BETTENCOURT J P,et al.Monolithic integration of silicon CMOS and Ga N transistors in a current mirror circuit[J].Journal of Vacuum Science&Technology:B,2012,30(2):02B101-1-02B101-6.
[39]CHAO P C,CHU K,CREAMER C.A new high power Ga N on Diamond HEMT with low temperature bonded substrate technology[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:179-182.
[40]TYHACH M,BERNSTEIN S,EJECKAM F,et al.Comparison of Ga N on diamond with Ga N on Si C HEMT and MMIC Performance[C]∥Proceedings of CS MANTECH Conference.Boston,Massachusetts,USA,2012.
[41]DUMKA D C,CHOU S M.Evaluation of thermal resistance of Al Ga N/Ga N heterostructure on diamond substrate[J].IEEE Thermal and Thermomechanical Phenomena in Electronic Systems(ITherm),2014:1210-1214.
[42]BLEVINS J D,VIA G D,SUTHERLIN K,et al.Recent progress in Ga N on Diamond device technology[C]∥Proceedings of CS MANTECH Conference.Denver,Colorado,USA,2014:105-108.
[43]Novel high thermal conductivity substrates for Ga N electronics:thermal innovation[EB/OL].(2015-06-25)[2015-07-01].http:∥gtr.rcuk.ac.uk/project/B9FAE690-1990-4248-BEFF-7D1B4BEC7505.
[44]刘一兵,黄新民,刘国华.Ga N基材料及其外延生长技术研究[J].微纳电子技术,2008,45(3):153-157.
[45]ZHAO C Z,YU L Y,TANG C X,et al.Optimized simulation for Ga N growth in vertical HVPE reactor[J].Advanced Materials Research,2011:116-120.
[46]CHEN J T.MOCVD growth of Ga N-based high electron mobility transistor structures[D].Sweden:Linkping University,2015.
[47]KOEHLER A D,NEPAL N,ANDERSON T J,et al.Investigation of Al Ga N/Ga N HEMTs Passivated by Al N films grown by atomic layer epitaxy[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:135-138.
[48]GONZALEZ M,CHENG K,TSENG P,et al.Ga N growth on patterned silicon substrates.A thermo mechanical study on wafer bow reduction[J].Euro Sim E,2012:1-6.
[49]WONG Y Y,CHIU Y S,LUONG T T,et al.Growth and fabrication of Al Ga N/Ga N HEMT on Si C Substrate[C]∥Proceedings of the 10thSemiconductor Electronics(ICSE).2012:729-732.
[50]HUANG C C,RIED F,PALACIOS T,et al.The growth of low wafer bow Al Ga N/Ga N structure on200 mm Si(111)[C]∥Proceedings of CS MANTECH Conference.Scottsdale,Arizona,USA,2015:107-110.
[2]KANAMURA M,OHKI T,KIKKAWA T,et al.Recent progress in Ga N HEMT for high-frequency and high power applications[C]∥Proceedings of IEEE International Symposium on Radio-Frequency Integration Technology(RFIT).Singapore,2012:156-158.
[3]李宝珠.宽禁带半导体材料技术[J].电子工业专用设备,2010,187:7-10.
[4]HIRAMA K,TANIYASU Y,KASU M.Epitaxial growth of Al Ga N/Ga N high-electron mobility transistor structure on diamond(111)surface[J].Japanese Journal of Applied Physics,2012,51(9):090114-1-090114-5.
[5]KUKUSHKIN S A,BESSOLOV V N,NEVOLIN V K,et al.Substrate for epitaxy of gallium nitride:new materials and techniques[J].Rev Adv Mater Sci,2008(17):1-32.
[6]SU J,LI H W,LEE S,et al.MOCVD growth of Al Ga N/Ga N heterostructures on 150 mm silicon[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:285-288.
[7]KAZIOR T E,LAROCHE J R,HOKE W E.More than Moore:Ga N HEMTs and Si CMOS get it together[C]∥Proceedings of IEEE Compound Semiconductor Integrated Circuit Symposium(CSICS).REIMS,CA,USA,2013:1-4.
[8]ZIMMER J W,CHANDLE G.Advances in large diameter Ga N on diamond substrates[C]∥Proceedings of CS MANTECH Conference.Chicago,Illinois,USA,2008.
[9]ROSKER M J,ALBRECHT J D,COHEN E,et al.DARPA's Ga N technology thrust[J].2010 IEEE MTT-S International,2010:1214-1217.
[10]BARNES A R,VITOBELLO F.ESA perspective on the industrialisation of european Ga N technology for space application[C]∥Proceedings of European Microwave Integrated Circuit Conference(Eu MIC).Italy,Rome,2014:233-236.
[11]STORM S.High quality european Ga N-wafer on Si C substrates for space applications[J].Let's Embrace Space,2012(2):404.
[12]MIKULLA M,STORM S,HENELIUS N,et al.Manga:manufacturable Ga N:Si C substrates and Ga N epi wafer supply chain[C]∥Proceedings of European Microwave Integrated Circuit Conference(Eu MIC).Italy,Rome,2014:221-224.
[13]European supply chain for advanced Ga N technologies[EB/OL].(2014-07-01)[2015-07-25].http:∥www.semiconductor-today.com/
[13]PASKOVA T Y,HANSER D A,EVANS K R.Ga N substrates for III-Nitride devices[J].IEEE Electron Device Letters,2010,98(7):1324-1338.
[14]PAN M,GAO X,GORKA D,et al.Development of Al Ga N/Ga N HEMTs on different substrates[C]∥Proceedings of CS Mantech Conference.Boston,Massachusetts,USA,2012.
[15]LESZCZYNSKI M,PRYSTAWKO P,PLESIEWICZ J,et al.Comparison of Si,Sapphire,Si C,and Ga N Substrates for HEMT epitaxy[J].ECS Transactions,2012,50(3):163-172.
[16]PELZEL R.A comparison of MOVPE and MBE growth technologies for III-V epitaxial structures[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:105-108.
[17]CHO J W,LI Z J,GRAYELI E B,et al.Improved thermal interfaces of Ga N-diamond composite substrates for HEMT applications[J].IEEE Transactions on Components,2013,3(1):79-85.
[18]CHEN K J,KWAN A M H,JIANG Q M,et al.Technology for III-N heterogeneous mixed-signal elec-tronics[J].Phys Status Solidi A 211,2014,4:669-774.
[19]PENGELLY R S,WOOD S M,MILLIGAN J W,et al.A review of Ga N on Si C high electron-mobility power transistors and MMICs[J].IEEE Transactions on Microwave Theory and Techniques,2012,60(6):1764-1783.
[20]WHELAN C S,KOLIAS N J,BRIERLEY S,et al.Ga N technology for radars[C]∥Proceedings of CS MANTECH Conference.Boston,Massachusetts,USA,2012.
[21]Cree's rivals preparing to launch 6-inch Si C wafers[EB/OL].(2013-10-08)[2015-07-02].http:∥techon.nikkeibp.co.jp/english/.
[22]PALMOUR J W.Silicon carbide power device development for industrial markets[J].IEEE International,2014:1.1.1-1.1.8.
[23]RFMD Inc.RFMD introduces world's first 6 inch Ga N on Si C wafers for RF power transistors[EB/OL].(2013-09-19)[2015-07-01].http:∥ir.rfmd.com/releasedetail.cfm?Release ID=791678.
[24]ISAAK R,DIAZ J,GERLACH M,et al.The first0.2μm 6-inch Ga N on Si C MMIC process[C]∥Proceedings of CS MANTECH Conference.Denver,Colorado,USA,2014:229-231.
[25]WALTEREIT P,STORM S,SCHAUWECKER B,et al.Development of an epitaxial growth process on European Si C substrates for a low leakage Ga N HEMT technology with power added efficiencies around 65%[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:121-124.
[26]ISHIDA T.Ga N HEMT technologies for space and radio applications[J].Microwave Journal,2011,54(8):56-61.
[27]PENGELLY R S,WOOD S M,MILLIGAN J W.A review of Ga N on Si C high electron-mobility power transistors and MMICs[J].IEEE Transactions on Microwave Theory and Techniques,2012,60(6):1764-1783.
[28]Tri Quint becomes first manufacturer to achieve MRL 9 for Ga N[EB/OL].(2014-07-29)[2015-07-01].http:∥world.einnews.com/article detail/216025713.
[29]HOKE W E,KENNEDY T D,TORABI A,et al.Highly uniform Al Ga N/Ga N HEMT films grown on200 mm silicon substrates by plasma molecular beam epitaxy[J].Journal of Vacuum Science&Technology B,2014(32):030605.
[30]LAROCHE J,IP K,BREEN M,et al.Fabrication of Ga N MISHEMTs fabricated from Ga N grown by MOCVD on high resistance 200 mm<111>Si substrates[C]∥Proceedings of CS MANTECH Conference.Denver,Colorado,USA,2014:335-338.
[31]LU B,PALACIOS T.High breakdown(>1 500 V)AlGa N/Ga N HEMTs by substrate-transfer technology[J].IEEE Electron Device Letters,2010,31(9):951-953.
[32]CHUNG J W,RYU K,LU B,et al.Ga N-on-Si technology,A new approach for advanced devices in energy and communications[C]∥Proceedings of the European Solid-State Device Research Conference(ESSDERC).2010:52–56.
[33]ROSKER M J.The DARPA compound semiconductors on silicon(COSMOS)program[C]∥Proceedings of CS MANTECH Conference.Chicago,Illinois,USA,2008.
[34]GREEN D S,DOHRMAN C L,CHANG T H.The DARPA diverse accessible heterogeneous integration(DAHI)program:status and future directions[C]∥Proceedings of CS MANTECH Conference.Denver,Colorado,USA,2014:343-346.
[35]KAZIOR T E.Beyond CMOS:heterogeneous integration of III-V devices,RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems[EB/OL].(2014-02-01)[2015-07-02]http:∥rsta.royalsocietypublishing.org/content/372/2012/20130105.
[36]CHUNG J W,LEE J,PINER E L,et al.Seamless on-wafe integration of Si(100)MOSFETs and Ga N HEMTs[J].IEEE Electron Device Letters,2009,30(10):1015-1017.
[37]LEE H S,RYU K,SUN M,et al.Wafer-level heterogeneous integration of Ga N HEMTs and Si(100)MOSFETs[J].IEEE Electron Device Letters,2012,33(2):200-202.
[38]HOKE W E,CHELAKARA R V,BETTENCOURT J P,et al.Monolithic integration of silicon CMOS and Ga N transistors in a current mirror circuit[J].Journal of Vacuum Science&Technology:B,2012,30(2):02B101-1-02B101-6.
[39]CHAO P C,CHU K,CREAMER C.A new high power Ga N on Diamond HEMT with low temperature bonded substrate technology[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:179-182.
[40]TYHACH M,BERNSTEIN S,EJECKAM F,et al.Comparison of Ga N on diamond with Ga N on Si C HEMT and MMIC Performance[C]∥Proceedings of CS MANTECH Conference.Boston,Massachusetts,USA,2012.
[41]DUMKA D C,CHOU S M.Evaluation of thermal resistance of Al Ga N/Ga N heterostructure on diamond substrate[J].IEEE Thermal and Thermomechanical Phenomena in Electronic Systems(ITherm),2014:1210-1214.
[42]BLEVINS J D,VIA G D,SUTHERLIN K,et al.Recent progress in Ga N on Diamond device technology[C]∥Proceedings of CS MANTECH Conference.Denver,Colorado,USA,2014:105-108.
[43]Novel high thermal conductivity substrates for Ga N electronics:thermal innovation[EB/OL].(2015-06-25)[2015-07-01].http:∥gtr.rcuk.ac.uk/project/B9FAE690-1990-4248-BEFF-7D1B4BEC7505.
[44]刘一兵,黄新民,刘国华.Ga N基材料及其外延生长技术研究[J].微纳电子技术,2008,45(3):153-157.
[45]ZHAO C Z,YU L Y,TANG C X,et al.Optimized simulation for Ga N growth in vertical HVPE reactor[J].Advanced Materials Research,2011:116-120.
[46]CHEN J T.MOCVD growth of Ga N-based high electron mobility transistor structures[D].Sweden:Linkping University,2015.
[47]KOEHLER A D,NEPAL N,ANDERSON T J,et al.Investigation of Al Ga N/Ga N HEMTs Passivated by Al N films grown by atomic layer epitaxy[C]∥Proceedings of CS MANTECH Conference.New Orleans,Louisiana,USA,2013:135-138.
[48]GONZALEZ M,CHENG K,TSENG P,et al.Ga N growth on patterned silicon substrates.A thermo mechanical study on wafer bow reduction[J].Euro Sim E,2012:1-6.
[49]WONG Y Y,CHIU Y S,LUONG T T,et al.Growth and fabrication of Al Ga N/Ga N HEMT on Si C Substrate[C]∥Proceedings of the 10thSemiconductor Electronics(ICSE).2012:729-732.
[50]HUANG C C,RIED F,PALACIOS T,et al.The growth of low wafer bow Al Ga N/Ga N structure on200 mm Si(111)[C]∥Proceedings of CS MANTECH Conference.Scottsdale,Arizona,USA,2015:107-110.