摘要
以双亲性嵌段共聚物F127(PEO106-PPO70-PEO106)为模板剂,聚乙烯基硅氮烷(PVSZ)为前驱体,采用软模板法和无压烧结工艺制备出不同微结构SiCNO陶瓷。利用扫描电镜、电子探针、X射线衍射仪、动态光散射、热重分析和阻抗分析仪等手段表征SiCNO陶瓷,并分析了不同形貌结构对陶瓷介电损耗特性的影响。结果表明,通过精确控制蒸发温度可制备出棒状、十字架状、球形和卵形结构SiCNO陶瓷;SiCNO陶瓷介电损耗与形貌结构密切相关,介电损耗值随着蒸发温度升高呈先增大后降低的趋势,当陶瓷微观结构为十字架结构时,介电损耗达到最高值为0.24;当陶瓷微观结构为卵形结构时,介电损耗最低值为0.03。
The different microstructured SiCNO ceramics were prepared by using amphiphilic block copolymer F127(PEO106-PPO70-PEO106)as template agent and polyvinysilazane(PVSZ)as the precursors.The morphology and structure properties of the SiCNO ceramics were characterized by scanning electron microscopy,electron probe,X-ray diffraction,dynamic light scattering,thermogravimetric analysis and impedance analyzer.The results show that the SiCNO ceramics with rod like,cross shaped,spherical and oval structures were prepared by controlling the evaporation temperature.Furthermore,the influence of different microstructured SiCNO ceramic dielectric loss characteristics were studied,the dielectric loss of the lowest and highest values were 0.03and0.24,corresponding to the oval structure and the cross structure.
引文
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