薄层g-C_3N_4/β-SnWO_4异质结光催化剂的制备及性能
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摘要
以β-SnWO_4和薄层g-C_3N_4为原料,通过静电力作用制备了具有异质结结构的薄层g-C_3N_4/β-SnWO_4光催化剂。通过X射线衍射、扫描电子显微镜、透射电子显微镜、紫外可见漫反射、荧光光谱仪等对薄层g-C_3N_4/β-SnWO_4光催化剂进行表征。通过在可见光下降解罗丹明B(RhB)来评价样品的光催化性能。结果表明,β-SnWO_4被嵌入薄层g-C_3N_4,且薄层g-C_3N_4质量分数为80%时,薄层g-C_3N_4/β-SnWO_4光催化剂的光催化性能最好,16min后RhB降解率可达96%。
Thin g-C_3N_4/β-SnWO_4 heterojunction photocatalyst was fabricated via electrostatic force using thin g-C_3N_4 and β-SnWO_4 as raw materials. The thin g-C_3N_4/β-SnWO_4 samples were characterized by X ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscopy(TEM),ultraviolet-visible(UV-Vis)spectroscopy and photoluminescence(PL)spectroscopy.The photocatalytic activity of the samples was evaluated by degradation of Rhodamine-B(RhB).The results showed thatβ-SnWO_4 nanoparticles were embedded into the film of thin g-C_3N_4.When the thin g-C_3N_4 content was 80%,thin g-C_3N_4/β-SnWO_4 showed highest photocatalytic activity.Under the condition,the degradation rate of RhB could reach to 96%after degrading for 16 min.
Thin g-C_3N_4/β-SnWO_4 heterojunction photocatalyst was fabricated via electrostatic force using thin g-C_3N_4 and β-SnWO_4 as raw materials. The thin g-C_3N_4/β-SnWO_4 samples were characterized by X ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscopy(TEM),ultraviolet-visible(UV-Vis)spectroscopy and photoluminescence(PL)spectroscopy.The photocatalytic activity of the samples was evaluated by degradation of Rhodamine-B(RhB).The results showed thatβ-SnWO_4 nanoparticles were embedded into the film of thin g-C_3N_4.When the thin g-C_3N_4 content was 80%,thin g-C_3N_4/β-SnWO_4 showed highest photocatalytic activity.Under the condition,the degradation rate of RhB could reach to 96%after degrading for 16 min.
引文
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[5]LI W T,HUANG W Z,ZHOU H,et al.Synthesis and photoactivity enhancement of Ba doped Bi2WO6photocatalyst[J].Materials Research Bulletin,2015,64(4):432-437.
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[12]JAN U,CARMEN S,EVA Z,et al.In vitro fluorescence and phototoxicity ofβ-SnWO4nanoparticles[J].Chemical Communications,2014,50(1):6600-6603.
[13]ZHU B C,XIA P F,HUO W K,et al.Isoelectric point and adsorption activity of porous g-C3N4[J].Applied Surface Science,2015,344(7):188-195.