一种基于片上测试系统的AlGaN/GaN HEMT器件大信号建模方法
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摘要
AlGaN/GaN材料是目前最吸引人的半导体材料之一。AlGaN/GaN高电子迁移率晶体管(HEMT)器件的建模方法主要基于传统的GaAs FET模型分析方法,未考虑材料本身的新特性。通过使用片上测试系统,结合数值分析方法,提出了一种AlGaN/GaN HEMT器件的大信号模型,该模型中的寄生参数值可通过特殊测试结构和数值优化方法获得,模型中的直流参数可以通过改进传统STATZ直流模型获得,改进后模型的直流参数随着栅-源电压的变化而变化,比传统STATZ模型准确度提高了约10%。实验测量结果表明,在0.1~40GHz的频率范围内,模型参数提取结果与器件测量结果吻合良好。
AlGaN/GaN is one of the most attractive semiconductor materials. The modeling method for AlGaN/GaN device is mainly based on the traditional FET Ga As model analysis method,without considering the new characteristics of AlGaN/GaN. A parameter-extraction approach for large-signal model of the AlGaN/GaN HEMTs is proposed in this paper. The values of the parasitic parameters are extracted by using test structure and empirical optimization pracedure.An improved empirical model for the DC characteristics is presented in this paper. The improvement consists in allowing the Statz model paramseters to vary with gate-source voltage. Good agreement is obtained between the modeled and measured results in the frequency range of 0. 1 ~-40 GHz.
AlGaN/GaN is one of the most attractive semiconductor materials. The modeling method for AlGaN/GaN device is mainly based on the traditional FET Ga As model analysis method,without considering the new characteristics of AlGaN/GaN. A parameter-extraction approach for large-signal model of the AlGaN/GaN HEMTs is proposed in this paper. The values of the parasitic parameters are extracted by using test structure and empirical optimization pracedure.An improved empirical model for the DC characteristics is presented in this paper. The improvement consists in allowing the Statz model paramseters to vary with gate-source voltage. Good agreement is obtained between the modeled and measured results in the frequency range of 0. 1 ~-40 GHz.
引文
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[14]李秀萍,高建军.微波射频测量技术基础[M],北京:机械工业出版社,2007.
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[16]王琦.现代矢量网络分析仪的校准与测量[J].实验技术与管理,2006,23(2):31-34.
[2]Alt A R,Marti D,Bolognesi C R.Transistor modeling:robust small-signal equivalent circuit extraction in various HEMT technologies[J].IEEE Microwave Magazine,2013,14(4):83-101.
[3]卢东旭,杨克武,吴洪江.Ga N功率器件模型及其在电路设计中的应用[J].半导体技术,2007,32(4):313-315.
[4]Kelvin S,George R,David J.A wideband multiharmonic empirical large-signal model for high-power Ga N HEMTs with self-heating and charge-trapping effects[J].IEEE Transactions on Microwave Theory and Techniques,2009,57(12):3322-3332.
[5]Justin B,Thomas J.Nonlinear electrothermal Ga N HEMT model applied to high-efficiency power amplifier design[J].IEEE Transactions on Microwave Theory and Techniques,2013,61(1):444-454.
[6]Liu L.Enhanced prediction of Ga N MISHEMT RF power performance using improved large-signal model[J].Electronics Letters,2011,47(7):444-454.
[7]Jarndal A,Markos A,Kompa G.Improved modeling of Ga N HEMTs on Si substrate for design of RF power amplifiers[J].IEEE Transactions on Microwave Theory and Techniques,2011,59(3):644-651.
[8]Nguyen T,Kim S D.Millimeter-wave small-signal model using a coplanar waveguide de-embedded sub-model for HEMT[J].IEEE Microwave and Wireless Components Letters,2014,24(2):99-101.
[9]Gao J.Heterojunction bipolar transistors for circuit design:microwave modeling and parameter extraction[M].USA:John Wiley,2015.
[10]Shen L,Chen B,Gao J.An improved millimeter-wave small-signal modeling approach for HEMTs[J].International Journal of RF and Microwave Computer-aided Engineering,2014,24(4):464–469.
[11]范彩云,高建军.一种基于半分析法的HEMT小信号参数的提取方法[J].红外与毫米波学报,2014,33(1):72-77.
[12]Statz H,Newman P,Smith I W,et al.Ga As FET device and circuit simulation in SPICE[J].IEEE Transactions on Electron Devices,1987,34(2):160-169.
[13]Shen L,Chen B,Sun L,et al.An improved DC model for Al Ga N/Ga N HEMTs,Microwave and Optical Technology Letters,2015,57(5):1027-1029.
[14]李秀萍,高建军.微波射频测量技术基础[M],北京:机械工业出版社,2007.
[15]Wartenberg S.RF Measurement of die and package[M].USA:Artech House,2002.
[16]王琦.现代矢量网络分析仪的校准与测量[J].实验技术与管理,2006,23(2):31-34.