倒置芯片单面出光白光数码管的光色性能
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摘要
将掺杂TiO_2颗粒的高折射胶层旋涂于倒置芯片侧面,荧光粉胶层喷涂于芯片正表面,制备了白光数码管;并对样品进行了光色性能测试分析。结果表明,随着TiO_2颗粒浓度增加,白光数码管的光通量呈先上升后下降的趋势,在颗粒掺杂浓度为0.34%时达到最大值161.2lm,相较于掺杂浓度为0.00%时的155.0lm提高了3.85%,在掺杂浓度为0.40%时色温下降了33.4%。同时通过实验发现,五面出光结构白光数码管光的通量和色温分别比单面出光结构高7.80%和16.73%,通过比对芯片光强分布,单面出光芯片的可视角度为114.6°。结果表明,通过适当的掺杂颗粒浓度调制,可制备出可视角度小、相关色温可调和光通量适当的白光数码管。
By spraying the high refraction glue doped TiO_2 particles on the side of the inverted chip and spraying the phosphor powder coating on the surface of the chip,the white light digital tube was prepared,and the samples were tested and analyzed.The results of analysis indicate that,as the concentration of TiO_2 particles increases,the flux of the device first increases and then decreases after the first rise.The maximum flux of 161.2 lm is reached at concentraiton of TiO_2 particles of 0.34%,which is3.85% higher than that of 155.0 lm with the doping concentration of 0%.When the doping concentration is 0.4%,the color temperature is decreased by 33.4%.It is also discovered by experiment that the light flux and color temperature of the five faces lighting white light digital tubes are increased by7.80%and 16.73%compared with those of single surface lighting device,respectively.By comparing the intensity of the chip,a single surface lighting chip has a visual angle of 114.6°.The results show that by the properly adjusting the doped concentration of particles,a white light digital tube with small visual angle,adjustable relevant color temperature and suitable light flux can be proposed.
By spraying the high refraction glue doped TiO_2 particles on the side of the inverted chip and spraying the phosphor powder coating on the surface of the chip,the white light digital tube was prepared,and the samples were tested and analyzed.The results of analysis indicate that,as the concentration of TiO_2 particles increases,the flux of the device first increases and then decreases after the first rise.The maximum flux of 161.2 lm is reached at concentraiton of TiO_2 particles of 0.34%,which is3.85% higher than that of 155.0 lm with the doping concentration of 0%.When the doping concentration is 0.4%,the color temperature is decreased by 33.4%.It is also discovered by experiment that the light flux and color temperature of the five faces lighting white light digital tubes are increased by7.80%and 16.73%compared with those of single surface lighting device,respectively.By comparing the intensity of the chip,a single surface lighting chip has a visual angle of 114.6°.The results show that by the properly adjusting the doped concentration of particles,a white light digital tube with small visual angle,adjustable relevant color temperature and suitable light flux can be proposed.
引文
[1]Yamada K,Imai Y,Ishii K,et al.Optical simulation of light source devices composed of blue LEDs and YAG phosphor[J].J.Light Vis.Environ.,2003,27(2):70-74.
[2]ZHANG Rui-xi,WANG Hai-bo,HUANG Ru-xi,et al.The dependence of LED emissive intensity on YAG:Ce3+phosphor particle sizes[J].Chin.J.Lumin.,2010,31(3):305-310.张瑞西,王海波,黄如喜,等.LED红色发光粉的制备及封装性能[J].发光学报,2010,31(3):305-310.
[3]SHENG Li-jun.Research of the white light of digital tube technology based on the point glue[J].Optical Technique,2013,39(3):286-288.盛立军.基于点胶技术的白光数码管研究[J].光学技术,2013,39(3):286-288.
[4]SUN Yuan-ping,ZHANG Ze-hong,ZHAO De-gang,et al.Design of high brightness cubic-GaN LED grown on GaAs substrate[J].Journal of Semiconductors,2002,23(9):1001-1005.孙元平,张泽洪,赵德刚,等.GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现[J].半导体学报,2002,23(9):1001-1005.
[5]AI Zhe,NI Shuai-shuai,ZHANG Ya-fei.Warm white LED with high luminous efficiency based on CuInS2/ZnS core/shell quantum dots[J].Chinese Journal of Luminescence,2015,36(11):1282-1288.艾哲,倪帅帅,张亚非.基于CuInS2/ZnS核壳结构量子点的高光效暖白光LED[J].发光学报,2015,36(11):1282-1288.
[6]LI Xiao-yun,XU Tao,XU Wen-zheng,et al.Study on white QD-LED devices based on CdSe/ZnS and Alq3[J].Journal of Optoelectronics·Laser,2015,(8):1454-1459.李晓云,徐涛,许文政,等.基于CdSe/ZnS和Alq3的白光量子点LED的研究[J].光电子·激光,2015,(8):1454-1459.
[7]HUA You-jie,MA Hong-ping,ZHANG Chi,et al.Synthesis and packaging performance of regular spherical YAG:Ce3+phosphors for white LEDs[J].Chin.J.Lumin.2013,34(4):427-432.华有杰,马红萍,张驰,等.用于白光LED的规则球形YAG:Ce3+荧光粉制备及封装性能研究[J].发光学报,2013,34(4):427-432.
[8]ZHUO Ning-ze,ZHANG Na,LI Bo-chao,et al.Investigation of photo-chromic properties of remote phospho r film and white light emitting diode mixed with TiO2 particles[J].Acta Physica Sinica,2016,65(5):058501-058507.卓宁泽,张娜,李博超,等.TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响[J].物理学报,2016,65(5):058501-058507.
[9]Qi Zhi-jian,Huang Wei-gang.Preparation and luminescent properties of Ca3Si3O9:Dy3+phosphors for white LED[J].Acta Physica Sinica,2013,19(62):197801-197805.齐智坚,黄维刚.白光LED用Ca3Si3O9:Dy3+荧光粉的制备及其发光性能[J].物理学报,2013,19(62):197801-197805.
[10]WU Yong-hua,YANG Fu-gui,QIAO Liang,et al.Luminescent performances of non-rare earth Mn4+:Li2TiO3 red phosphors[J].Journal of Optoelectronics·Laser,2017,28(8):854-858.武永华,羊富贵,乔亮,等.非稀土红色荧光粉Mn4+:Li2TiO3发光特性研究[J].光电子·激光,2017,28(8):854-858.
[11]Seo J,Kim S,Kim Y,et al.Effect of glass refractive index on light extraction efficiency of light-emitting diodes[J].Journal of the American Ceramic Society,2014,97(9):2789-2793.
[12]Chen D,Chen Y.Transparent Ce3+:Y3Al5O12 glass ceramic for organic-resin-free white-light-emitting diodes[J].Ceramics International,2014,40(9):15325-15329.
[13]Xu J,Hassan D A,Zeng R J,et al.Lu3Al5O12:Ce@SiO2phosphor-in-glass:Its facile synthesis,reduc ed thermal/chemical degradation and application in high-power white LEDs[J].Journal of the European C eramic Society,2016,36(8):2017-2025.
[14]WU Hua-sheng,ZHOU Xiao-ping.Reduce the angle of LED chip:CN,104821354 A[P].2015-08-05.吴化胜,周小平.减小LED芯片发光角度的方法:中国,104821354 A[P].2015-08-05.
[15]Shchekin O B,Epler J E,Trottier T A,et al.High performance thin-film flip-chip InGaN-GaN light-emittin g diodes[J].Appl.Phys.Lett.,2006,89:71-109.
[16]Mont F W,Kim J K,Schubert M F.High-refractive-index Ti2-nanoparticle-loaded Encapsulants for Light-emitting Diodes[J].Journal of Applied Physics,2008,103(08):3120-3125.
[2]ZHANG Rui-xi,WANG Hai-bo,HUANG Ru-xi,et al.The dependence of LED emissive intensity on YAG:Ce3+phosphor particle sizes[J].Chin.J.Lumin.,2010,31(3):305-310.张瑞西,王海波,黄如喜,等.LED红色发光粉的制备及封装性能[J].发光学报,2010,31(3):305-310.
[3]SHENG Li-jun.Research of the white light of digital tube technology based on the point glue[J].Optical Technique,2013,39(3):286-288.盛立军.基于点胶技术的白光数码管研究[J].光学技术,2013,39(3):286-288.
[4]SUN Yuan-ping,ZHANG Ze-hong,ZHAO De-gang,et al.Design of high brightness cubic-GaN LED grown on GaAs substrate[J].Journal of Semiconductors,2002,23(9):1001-1005.孙元平,张泽洪,赵德刚,等.GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现[J].半导体学报,2002,23(9):1001-1005.
[5]AI Zhe,NI Shuai-shuai,ZHANG Ya-fei.Warm white LED with high luminous efficiency based on CuInS2/ZnS core/shell quantum dots[J].Chinese Journal of Luminescence,2015,36(11):1282-1288.艾哲,倪帅帅,张亚非.基于CuInS2/ZnS核壳结构量子点的高光效暖白光LED[J].发光学报,2015,36(11):1282-1288.
[6]LI Xiao-yun,XU Tao,XU Wen-zheng,et al.Study on white QD-LED devices based on CdSe/ZnS and Alq3[J].Journal of Optoelectronics·Laser,2015,(8):1454-1459.李晓云,徐涛,许文政,等.基于CdSe/ZnS和Alq3的白光量子点LED的研究[J].光电子·激光,2015,(8):1454-1459.
[7]HUA You-jie,MA Hong-ping,ZHANG Chi,et al.Synthesis and packaging performance of regular spherical YAG:Ce3+phosphors for white LEDs[J].Chin.J.Lumin.2013,34(4):427-432.华有杰,马红萍,张驰,等.用于白光LED的规则球形YAG:Ce3+荧光粉制备及封装性能研究[J].发光学报,2013,34(4):427-432.
[8]ZHUO Ning-ze,ZHANG Na,LI Bo-chao,et al.Investigation of photo-chromic properties of remote phospho r film and white light emitting diode mixed with TiO2 particles[J].Acta Physica Sinica,2016,65(5):058501-058507.卓宁泽,张娜,李博超,等.TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响[J].物理学报,2016,65(5):058501-058507.
[9]Qi Zhi-jian,Huang Wei-gang.Preparation and luminescent properties of Ca3Si3O9:Dy3+phosphors for white LED[J].Acta Physica Sinica,2013,19(62):197801-197805.齐智坚,黄维刚.白光LED用Ca3Si3O9:Dy3+荧光粉的制备及其发光性能[J].物理学报,2013,19(62):197801-197805.
[10]WU Yong-hua,YANG Fu-gui,QIAO Liang,et al.Luminescent performances of non-rare earth Mn4+:Li2TiO3 red phosphors[J].Journal of Optoelectronics·Laser,2017,28(8):854-858.武永华,羊富贵,乔亮,等.非稀土红色荧光粉Mn4+:Li2TiO3发光特性研究[J].光电子·激光,2017,28(8):854-858.
[11]Seo J,Kim S,Kim Y,et al.Effect of glass refractive index on light extraction efficiency of light-emitting diodes[J].Journal of the American Ceramic Society,2014,97(9):2789-2793.
[12]Chen D,Chen Y.Transparent Ce3+:Y3Al5O12 glass ceramic for organic-resin-free white-light-emitting diodes[J].Ceramics International,2014,40(9):15325-15329.
[13]Xu J,Hassan D A,Zeng R J,et al.Lu3Al5O12:Ce@SiO2phosphor-in-glass:Its facile synthesis,reduc ed thermal/chemical degradation and application in high-power white LEDs[J].Journal of the European C eramic Society,2016,36(8):2017-2025.
[14]WU Hua-sheng,ZHOU Xiao-ping.Reduce the angle of LED chip:CN,104821354 A[P].2015-08-05.吴化胜,周小平.减小LED芯片发光角度的方法:中国,104821354 A[P].2015-08-05.
[15]Shchekin O B,Epler J E,Trottier T A,et al.High performance thin-film flip-chip InGaN-GaN light-emittin g diodes[J].Appl.Phys.Lett.,2006,89:71-109.
[16]Mont F W,Kim J K,Schubert M F.High-refractive-index Ti2-nanoparticle-loaded Encapsulants for Light-emitting Diodes[J].Journal of Applied Physics,2008,103(08):3120-3125.