Optoelectronic platform and technology
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摘要
Optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.
Optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.
Optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.
引文
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Bogaerts W,Chrostowski L,2018.Silicon photonics circuit design:methods,tools and challenges.Laser Photon Rev,12(4):1700237.https://doi.org/10.1002/lpor.201700237
Cai Y,Han ZH,Wang XX,et al.,2013.Analysis of threshold current behavior for bulk and quantum-well germanium laser structures.IEEE J Sel Top Quant Electr,19(4):1901009.https://doi.org/10.1109/JSTQE.2013.2247573
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Chen L,Sohdi A,Bowers JE,et al.,2013.Electronic and photonic integrated circuits for fast data center optical circuit switches.IEEE Commun Mag,51(9):53-59.https://doi.org/10.1109/MCOM.2013.6588650
Cui Z,2005.Micro-Nanofabrication Technologies and Applications.Higher Education Press,Beijing,China(in Chinese).
Forrest SR,2004.The path to ubiquitous and low-cost organic electronic appliances on plastic.Nature,428(6986):911-918.https://doi.org/10.1038/nature02498
Gunn C,2006.CMOS photonics for high-speed interconnects.IEEE Micro,26(2):58-66.https://doi.org/10.1109/MM.2006.32
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Jeong JW,McCall JG,Shin G,et al.,2015.Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics.Cell,162(3):662-674.https://doi.org/10.1016/j.cell.2015.06.058
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Ko HC,Stoykovich MP,Song JZ,et al.,2008.A hemispherical electronic eye camera based on compressible silicon optoelectronics.Nature,454(7205):748-753.https://doi.org/10.1038/nature07113
Lee HW,Schmidt MA,Russell RF,et al.,2011.Pressureassisted melt-filling and optical characterization of Au nano-wires in microstructured fibers.Opt Expr,19(13):12180-12189.https://doi.org/10.1364/OE.19.012180
Li M,Chen XF,Su YK,et al.,2016.Photonic integration circuits in China.IEEE J Quant Electr,52(1):0601017.https://doi.org/10.1109/JQE.2015.2504087
Liang D,Bowers JE,2008.Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate.J Vac Sci Technol B,26(4):1560.https://doi.org/10.1116/1.2943667
Lu LY,Gutruf P,Xia L,et al.,2018.Wireless optoelectronic photometers for monitoring neuronal dynamics in the deep brain.Proc Nat Acad Sci USA,115(7):E1374-E1383.https://doi.org/10.1073/pnas.1718721115
Nomura K,Ohta H,Takagi A,et al.,2004.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.Nature,432(7016):488-492.https://doi.org/10.1038/nature03090
Ostendorf R,Kaufel G,Moritz R,et al.,2008.10 W highefficiency high-brightness tapered diode lasers at 976 nm.Proc SPIE 6876,High-Power Diode Laser Technology and Applications VI,p.68760H.https://doi.org/10.1117/12.761124
Park SI,Ahn JH,Feng X,et al.,2008.Theoretical and experimental studies of bending of inorganic electronic materials on plastic substrates.Adv Funct Mater,18(18):2673-2684.https://doi.org/10.1002/adfm.200800306
Salimpoor VN,van den Bosch I,Kovacevic N,et al.,2003.Interactions between the nucleus accumbens and auditory cortices predict music reward value.Science,340(6129):216-219.https://doi.org/10.1126/science.1231059
Sazio PJA,Amezcua-Correa A,Finlayson CE,et al.,2006.Microstructured optical fibers as high-pressure microfluidic reactors.Science,311(5767):1583-1586.https://doi.org/10.1126/science.1124281
Sparks JR,Sazio PJA,Gopalan V,et al.,2013.Templated chemically deposited semiconductor optical fiber materials.Ann Rev Mater Res,43:527-557.https://doi.org/10.1146/annurev-matsci-073012-125958
Vivien L,Osmond J,Fédéli JM,2009.42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.Opt Expr,17(8):6252-6257.https://doi.org/10.1364/OE.17.006252
Wang ZB,Helander MG,Qiu J,et al.,2011.Unlocking the full potential of organic light-emitting diodes on flexible plastic.Nat Photon,5(12):753-757.https://doi.org/10.1038/nphoton.2011.259
Yan W,Qu YP,Gupta TD,et al.,2017.Semiconducting nanowire-based optoelectronic fibers.Adv Mater,29(27):1700681.https://doi.org/10.1002/adma.201700681
Yan W,Page A,Nguyen-Dang T,et al.,2018.Advanced multimaterial electronic and optoelectronic fibers and textiles.Adv Mater,31(1):1802348.https://doi.org/10.1002/adma.201802348
Yang DR,2016.Silicon Based Photoluminescence Materials and Devices.Science Press,Beijing,China(in Chinese).
Yu JZ,Chen SW,Xia JS,et al.,2005.Research progresses of SOI optical waveguide devices and integrated optical switch matrix.Sci China Ser F,48(2):234-246.https://doi.org/10.1360/04yf0311
Yuan LJ,Tao L,Chen WX,et al.,2015.A buried ridge stripe structure InGaAsP-Si hybrid laser.IEEE Photon Technol Lett,27(4):352-355.https://doi.org/10.1109/LPT.2014.2372892
Zhai RH,2009.Novel photoelectron elements and technologies to support ROF.ZTE Commun,15(3):11-16(in Chinese).https://doi.org/10.3969/j.issn.1009-6868.2009.03.003
Zhu NH,Li M,Hao Y,2016.Optoelectronic devices and integration technologies.Sci Sin Inform,46(8):1156-1174(in Chinese).https://doi.org/10.1360/N112016-00059
Atabaki AH,Moazeni S,Pavanello F,et al.,2018.Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.Nature,556(7701):349-354.https://doi.org/10.1038/s41586-018-0028-z
Bayindir M,Sorin F,Abouraddy AF,et al.,2004.Metalinsulator-semiconductor optoelectronic fibres.Nature,431(7010):826-829.https://doi.org/10.1038/nature02937
Bogaerts W,Chrostowski L,2018.Silicon photonics circuit design:methods,tools and challenges.Laser Photon Rev,12(4):1700237.https://doi.org/10.1002/lpor.201700237
Cai Y,Han ZH,Wang XX,et al.,2013.Analysis of threshold current behavior for bulk and quantum-well germanium laser structures.IEEE J Sel Top Quant Electr,19(4):1901009.https://doi.org/10.1109/JSTQE.2013.2247573
Cardoso JC,Grimes CA,Feng XJ,et al.,2012.Fabrication of coaxial TiO2/Sb2S3 nanowire hybrids for efficient nanostructured organic-inorganic thin film photovoltaics.Chem Commun,48(22):2818-2820.https://doi.org/10.1039/C2CC17573H
Chen L,Sohdi A,Bowers JE,et al.,2013.Electronic and photonic integrated circuits for fast data center optical circuit switches.IEEE Commun Mag,51(9):53-59.https://doi.org/10.1109/MCOM.2013.6588650
Cui Z,2005.Micro-Nanofabrication Technologies and Applications.Higher Education Press,Beijing,China(in Chinese).
Forrest SR,2004.The path to ubiquitous and low-cost organic electronic appliances on plastic.Nature,428(6986):911-918.https://doi.org/10.1038/nature02498
Gunn C,2006.CMOS photonics for high-speed interconnects.IEEE Micro,26(2):58-66.https://doi.org/10.1109/MM.2006.32
Haney MW,2013.How will photonic integrated circuits develop?Proc SPIE 8629,Silicon Photonics VIII,p.86290L.https://doi.org/10.1117/12.2008352
Heck MJR,Bauters JF,Davenport ML,et al.,2013.Hybrid silicon photonic integrated circuit technology.IEEE J Sel Top Quant Electr,19(4):6100117.https://doi.org/10.1109/JSTQE.2012.2235413
Heung CH,Stoykovich MP,Song JZ,et al.,2008.A hemispherical electronic eye camera based on compressible silicon optoelectronics.Nature,454(7205):748-753.
Jeong JW,McCall JG,Shin G,et al.,2015.Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics.Cell,162(3):662-674.https://doi.org/10.1016/j.cell.2015.06.058
Kim RH,Kim DH,Xiao JL,et al.,2010.Waterproof AlInGaPoptoelectronics on stretchable substrates with applications in biomedicine and robotics.Nat Mater,9(11):929-937.https://doi.org/10.1038/nmat2879
Kim TI,McCall JG,Jung YH,et al.,2013.Injectable,cellularscale optoelectronics with applications for wireless optogenetics.Science,340(6129):211-216.https://doi.org/10.1126/science.1232437
Ko HC,Stoykovich MP,Song JZ,et al.,2008.A hemispherical electronic eye camera based on compressible silicon optoelectronics.Nature,454(7205):748-753.https://doi.org/10.1038/nature07113
Lee HW,Schmidt MA,Russell RF,et al.,2011.Pressureassisted melt-filling and optical characterization of Au nano-wires in microstructured fibers.Opt Expr,19(13):12180-12189.https://doi.org/10.1364/OE.19.012180
Li M,Chen XF,Su YK,et al.,2016.Photonic integration circuits in China.IEEE J Quant Electr,52(1):0601017.https://doi.org/10.1109/JQE.2015.2504087
Liang D,Bowers JE,2008.Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate.J Vac Sci Technol B,26(4):1560.https://doi.org/10.1116/1.2943667
Lu LY,Gutruf P,Xia L,et al.,2018.Wireless optoelectronic photometers for monitoring neuronal dynamics in the deep brain.Proc Nat Acad Sci USA,115(7):E1374-E1383.https://doi.org/10.1073/pnas.1718721115
Nomura K,Ohta H,Takagi A,et al.,2004.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.Nature,432(7016):488-492.https://doi.org/10.1038/nature03090
Ostendorf R,Kaufel G,Moritz R,et al.,2008.10 W highefficiency high-brightness tapered diode lasers at 976 nm.Proc SPIE 6876,High-Power Diode Laser Technology and Applications VI,p.68760H.https://doi.org/10.1117/12.761124
Park SI,Ahn JH,Feng X,et al.,2008.Theoretical and experimental studies of bending of inorganic electronic materials on plastic substrates.Adv Funct Mater,18(18):2673-2684.https://doi.org/10.1002/adfm.200800306
Salimpoor VN,van den Bosch I,Kovacevic N,et al.,2003.Interactions between the nucleus accumbens and auditory cortices predict music reward value.Science,340(6129):216-219.https://doi.org/10.1126/science.1231059
Sazio PJA,Amezcua-Correa A,Finlayson CE,et al.,2006.Microstructured optical fibers as high-pressure microfluidic reactors.Science,311(5767):1583-1586.https://doi.org/10.1126/science.1124281
Sparks JR,Sazio PJA,Gopalan V,et al.,2013.Templated chemically deposited semiconductor optical fiber materials.Ann Rev Mater Res,43:527-557.https://doi.org/10.1146/annurev-matsci-073012-125958
Vivien L,Osmond J,Fédéli JM,2009.42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.Opt Expr,17(8):6252-6257.https://doi.org/10.1364/OE.17.006252
Wang ZB,Helander MG,Qiu J,et al.,2011.Unlocking the full potential of organic light-emitting diodes on flexible plastic.Nat Photon,5(12):753-757.https://doi.org/10.1038/nphoton.2011.259
Yan W,Qu YP,Gupta TD,et al.,2017.Semiconducting nanowire-based optoelectronic fibers.Adv Mater,29(27):1700681.https://doi.org/10.1002/adma.201700681
Yan W,Page A,Nguyen-Dang T,et al.,2018.Advanced multimaterial electronic and optoelectronic fibers and textiles.Adv Mater,31(1):1802348.https://doi.org/10.1002/adma.201802348
Yang DR,2016.Silicon Based Photoluminescence Materials and Devices.Science Press,Beijing,China(in Chinese).
Yu JZ,Chen SW,Xia JS,et al.,2005.Research progresses of SOI optical waveguide devices and integrated optical switch matrix.Sci China Ser F,48(2):234-246.https://doi.org/10.1360/04yf0311
Yuan LJ,Tao L,Chen WX,et al.,2015.A buried ridge stripe structure InGaAsP-Si hybrid laser.IEEE Photon Technol Lett,27(4):352-355.https://doi.org/10.1109/LPT.2014.2372892
Zhai RH,2009.Novel photoelectron elements and technologies to support ROF.ZTE Commun,15(3):11-16(in Chinese).https://doi.org/10.3969/j.issn.1009-6868.2009.03.003
Zhu NH,Li M,Hao Y,2016.Optoelectronic devices and integration technologies.Sci Sin Inform,46(8):1156-1174(in Chinese).https://doi.org/10.1360/N112016-00059