单/双离子替代对铁酸铋薄膜性能影响的研究进展
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摘要
铁酸铋在室温下既可表现出铁电性又可表现出反铁磁性,在器件应用上有非常大的应用前景,因此被认为是最有前途的多铁性化合物之一。本文综述了多铁性材料的发展历史、铁酸铋晶体结构以及国内外近年来关于铁酸铋薄膜铁电性能离子替代改性的相关工作及研究进展。本文重点围绕由镧系和低价碱金属元素的A位替代、过渡族金属元素的B位替代,以及A,B位共同替代对铁酸铋薄膜的漏电流、铁电性的影响,并系统总结了不同元素、不同掺杂量对A,B位替代的铁酸铋薄膜的剩余极化和矫顽电场值的影响,更为直观地展现出各类元素离子替代改性对铁酸铋薄膜的影响。本文最后提出了关于铁酸铋薄膜制造工艺、电极材料、薄膜厚度和操作电压等亟待开展的工作。
Bismuth ferrite is considered to be the largest prospect in the field of device, owing to its both ferroelectricity and antiferromagnetic property at room temperature.It is considered to be the most promising multiferroic compound.The history of the development of multiferroic materials, the crystal structure of bismuth ferrite, and related work and progress on ion substitution modification of ferroelectric properties of bismuth ferrite film in recent years were reviewed in this paper.The focus was on the replacement of the A site by the lanthanide and the low cost alkali metal element, the substitution of the B-site by the transition metal element, and the common substitution of the A and B sites for the leakage current and ferroelectricity of the bismuth ferrite film.The effect of different elements and different doping amounts on residual polarization and coercive electric field value of bismuth ferrate film substituted by A and B sites were systematically summarized.Accordingly, the effect of various elemental ion substitution modification on bismuth ferrite film can be more intuitively understood.At the end of this paper, the urgent work on the influence of fabrication process, electrode material, film thickness and operating voltage of bismuth ferrite thin films was put forward.
Bismuth ferrite is considered to be the largest prospect in the field of device, owing to its both ferroelectricity and antiferromagnetic property at room temperature.It is considered to be the most promising multiferroic compound.The history of the development of multiferroic materials, the crystal structure of bismuth ferrite, and related work and progress on ion substitution modification of ferroelectric properties of bismuth ferrite film in recent years were reviewed in this paper.The focus was on the replacement of the A site by the lanthanide and the low cost alkali metal element, the substitution of the B-site by the transition metal element, and the common substitution of the A and B sites for the leakage current and ferroelectricity of the bismuth ferrite film.The effect of different elements and different doping amounts on residual polarization and coercive electric field value of bismuth ferrate film substituted by A and B sites were systematically summarized.Accordingly, the effect of various elemental ion substitution modification on bismuth ferrite film can be more intuitively understood.At the end of this paper, the urgent work on the influence of fabrication process, electrode material, film thickness and operating voltage of bismuth ferrite thin films was put forward.
引文
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[2] 谢元涛,王凤起,张弋泽,等.掺杂对铁酸铋薄膜漏电流及铁电性的影响[J].表面技术,2018,47(1):33-38.XIE Y T,WANG F Q,ZHANG Y Z,et al.Effects of doping on leakage current and ferroelectricity of barium ferrite film[J].Surface Technology,2018,47(1):33-38.
[3] 凌飞,刘黎明,陈小波,等.铁酸铋薄膜的掺杂改性与光伏效应研究进展[J].硅酸盐通报,2015,34(增刊1):262-268.LING F,LIU L M,CHEN X B,et al.Research progress of doping modification and photovoltaic effect of bismuth ferrate films[J].Bulletin of the Chinese Ceramic Society,2015,34(Suppl 1):262-268.
[4] 张金星,于浦.多铁性材料BiFeO3的磁学、电学性质及磁电耦合效应[J].硅酸盐学报,2013,41(7):905-915.ZHANG J X,YU P.Magnetic,electrical properties and magnet-oelectric coupling effects of multiferroic material BiFeO3[J].Journal of the Chinese Ceramic Society,2013,41(7):905-915.
[5] EDERER C,SPALDIN N A.Weak ferromagnetism and magneto-electric coupling in bismuth ferrite[J].Physical Review B,2005,71(6):401-404.
[6] TEAGUE J R,GERSON R.Dielectric hysteresis in single crystal BiFeO3[J].Solid State Communications,1970,8(13):1073-1074.
[7] WANG J,ZHENG H,MA Z,et al.Epitaxial BiFeO3 thin films on Si[J].Applied Physics Letters,2004,85(13):2574-2576.
[8] NEATON J B,EDERER C.First-principles study of spontaneous polarization in multiferroic BiFeO3[J].Physical Review B,2005,71(1):4113-4118.
[9] PALKAR V R,JOHN J.Observation of saturated polarization and dielectric anomaly in magnetoelectric BiFeO3 thin films[J].Applied Physics Letters,2002,80(9):1628-1630.
[10] YUN K Y,NODA M,OKUYAMA M.Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition [J].Applied Physics,2003,83(19):3981-3983.
[11] WANG J,NEATON J B,ZHENG H,et al.Epitaxial BiFeO3 multiferroic thin film heterostructures[J].Science,2003,299(5613):1719-1722.
[12] YAN F,ZHU T J,LAI M O,et al.Influence of oxygen pressure on the ferroelectric properties of BiFeO3 thin films on LaNiO3/Si substrates via laser ablation[J].Applied Physics A-Materials Science & Processing,2010,101(4):651-654.
[13] WANG Y,NAN C W.Enhanced ferroelectricity in Ti-doped multiferroic BiFeO3 thin films[J].Applied Physics Letters,2006,89(5):2903-2905.
[14] HUANG D J,DENG H M,YANG P X,et al.Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique[J].Materials Letters,2010,64(20):2233-2235.
[15] WU J G,WANG J.BiFeO3 thin films deposited on LaNiO3-buffered SiO2/Si substrate[J].Journal of the American Ceramic Society,2010,93(5):1422-1426.
[16] ZAPATA J,NARVAEZ J,LOPERA W,et al.Electric and mag-netic properties of multiferroic BiFeO3 and YMnO3 thin films [J].IEEE Transactions on Magnetics,2008,44(11):2895-2898.
[17] LI D,ZHENG D,JIN C,et al.High-performance photovoltaic readable ferroelectric nonvolatile memory based on La-doped BiFeO3 films[J].ACS Applied Materials & Interfaces,2018,10(23):19836-19843.
[18] GUO S J,YANG C H,JIANG X M,et al.High ferroelectric performance of Bi0.9La0.1FeO3 thick film by optimizing prepa-ration precursor solution[J].Journal of Sol-Gel Science and Technology,2016,80(1):1-6.
[19] YUAN G L,BABA-KISHI K Z,LIU J M,et al.Multiferroic properties of single-phase Bi0.85La0.15FeO3 lead-free ceramics[J].Journal of the American Ceramic Society,2006,89(10):3136-3139.
[20] 石玉君,张旭,秦雷,等.Bi(1-x)LaxFeO(3±δ)薄膜的快速制备及铁电性[J].物理学报,2016,65(5):333-339.SHI Y J,ZHANG X,QIN L,et al.J.Rapid preparation and ferroelectricity of Bi(1-x)LaxFeO(3±δ) films[J].Acta Physica Sinica,2016,65(5):333-339.
[21] WU J,FAN Z,XIAO D,et al.Multiferroic bismuth ferrite-based materials for multifunctional applications:ceramic bulks,thin films and nanostructures[J].Progress in Materials Science,2016,84:335-402.
[22] HU Z,LI M,LIU J,et al.Structural transition and multiferroic properties of Eu-doped BiFeO3 thin films[J].Journal of the American Ceramic Society,2010,93(9):2743-2747.
[23] MUNEESWARAN M,LEE S H,DONG H K,et al.Structural,vibrational,and enhanced magneto-electric coupling in Ho-substi-tuted BiFeO3[J].Journal of Alloys & Compounds,2018,750:276-285.
[24] RAJAN P I,MAHALAKSHMI S,CHANDRA S.The struc-tural,electronic,magnetic and optical properties of the new promising spintronic material Bi0.92Tb0.08FeO3:a first-principles approach[J].Computational Materials Science,2018,145:244-251.
[25] RUBY S,INBANATHAN S S R.Structural properties and elect-rical conduction mechanisms of Bi0.9Sm0.05Tb0.05FeO3 thin film[J].Applied Surface Science,2017,449:10-14.
[26] CHAI Z,TAN G,YUE Z,et al.Ferroelectric properties of BiFeO3,thin films by Sr/Gd/Mn/Co multi-doping[J].Journal of Alloys & Compounds,2018,746:677-687.
[27] XUE X,TAN G Q,REN H J,et al.Structural,electric and multiferroic properties of Sm-doped BiFeO3 thin films prepared by the sol-gel process[J].Ceramics International,2013,39(6):6223-6228.
[28] SINGH,KUMAR S.Structural and electrical properties of Sm-substituted BiFeO3 thin films prepared by chemical solution deposition[J].Thin Solid Films,2013,527:26-132.
[29] GU Y,ZHAO J,ZHANG W,et al.Structural transformation and multiferroic properties of Sm and Ti co-doped BiFeO3,cera-mics with Fe vacancies[J].Ceramics International,2017,43(17):14666-14671.
[30] QUAN Z,HU H,XU S,et al.Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol-gel process[J].Journal of Sol-Gel Science and Technology,2008,48(3):261-266.
[31] LIU J,LI M,PEI L,et al.Effect of Ce doping on the micros-tructure and electrical properties of BiFeO3 thin films prepared by chemical solution deposition[J].Journal of Physics D-Applied Physics,2009,42(11):115409-115414.
[32] HAN D,WANG H,XU J,et al.Remarkable improvement of ferroelectric properties and leakage current in BiFeO3,thin films by nd modification[J].Journal of Wuhan University of Techn-ology (Materials Science Edition),2018,33(1):64-67.
[33] GONCALVES L F,ROCHA L S R,LONGO E,et al.Calcium doped BiFeO3,films:rietveld analysis and piezoelectric properties[J].Journal of Materials Science Materials in Electronics,2018,29(1):784-793.
[34] BRAHMI M,ALDULMANI S A,AMAMI M.Effect of Mg sub-stitution on room temperature dielectric and magnetic properties of Sr-doped bismuth ferrite[J].Journal of Superconductivity & Novel Magnetism,2017,30(9):1-7.
[35] CHANG H W,YUAN F T,TU K T,et al.Multiferroic prope-rties of Bi1-xAxFeO3 polycrystalline films on glass substrates (A=Ca,Sr,Ba and x=0.05-0.15)[J].Journal of Alloys and Compounds,2016,683:427-432.
[36] HUA L E,ZHAO C,LI W X,et al.Influence of paramagnetic La(2/3)Sr(1/3)MnO3 layer on the multiferroic property of Bi(0.8)Ba(0.2)FeO3 film[J].Acta Physica Sinica,2016,65(11):1-8.
[37] LI M,NING M,MA Y,et al.Room temperature ferroelectric,ferromagnetic and magnetoelectric properties of Ba-doped BiFeO3 thin films[J].Journal of Physics D-Applied Physics,2007,40(6):1603-1607.
[38] KHAN A H,ATIQ S,ANWAR M S,et al.Optimization of magnetodielectric coupling in Mn substituted BiFeO3 for potent-ial memory devices[J].Journal of Materials Science Materials in Electronics,2018,29(14):11812-11823.
[39] 訾玉宝,焦兴利,王海峰,等.Mn掺杂对多铁性BiFeO3薄膜铁电性能以及漏电流的影响[J].低温物理学报,2009,31(4):280-285.ZI Y B,JIAO X L,WANG H F,et al.Effect of Mn doping on ferroelectric properties and leakage current of multiferroic BiFeO3 thin films[J].Chinese Journal of Low Temperature Physics,2009,31(4):280-285.
[40] SINGH S K,MENOU N,FUNAKUBO H,et al.(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2/Si structures[J].Applied Physics Letters,2007,90(24):698-701.
[41] HUANG J Z,SHEN Y,LI M,et al.Structural transitions and enhanced ferroelectricity in Ca and Mn co-doped BiFeO3 thin films[J].Journal of Applied Physics,2011,110(9):4106-4112.
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