W掺杂和电化学表面处理制备高光电化学性能的BiVO_4光阳极(英文)
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  • 英文篇名:Synthesis of BiVO_4 photoanode with improved photoelectrochemical performance by W-doping and surface electrochemical pretreatment
  • 作者:万丽娟 ; 杨明
  • 英文作者:WAN Li Juan;YANG Ming;Nanjing Vocational Institute of Transport Technology;Jiangsu Engineering Technology Research Center for Energy Conservation and Emission Reduction of Transportation;School of Transportation,Southeast University;
  • 关键词:BiVO4 ; W掺杂 ; 光阳极
  • 英文关键词:BiVO4;;W-doped;;Photoanode
  • 中文刊名:SCDX
  • 英文刊名:Journal of Sichuan University(Natural Science Edition)
  • 机构:南京交通职业技术学院;江苏省交通节能减排工程技术研究中心;东南大学交通学院;
  • 出版日期:2018-05-24 09:56
  • 出版单位:四川大学学报(自然科学版)
  • 年:2018
  • 期:v.55
  • 基金:南京交通职业技术学院科研基金(JZ1704);南京交通职业技术学院高层次人才科研启动基金;; 江苏省高校自然科学研究面上项目基金(16KJD610004);; 国家自然科学基金(51208102)
  • 语种:英文;
  • 页:SCDX201803026
  • 页数:8
  • CN:03
  • ISSN:51-1595/N
  • 分类号:153-160
摘要
通过滴涂的方法合成了W掺杂BiVO4光阳极.通过XRD、紫外—可见吸收光谱、扫描电镜(SEM)对BiVO4光阳极进行表征,并对BiVO4光阳极进行了光电化学表征.为了提高W掺杂BiVO4光阳极的光电性能,对W掺杂BiVO4光阳极的制备条件进行了优化.光电化学测试结果表明电化学表面处理能够提高W掺杂BiVO4光阳极的光电化学性能.说明W掺杂和电化学表面处理可以增加BiVO4光阳极光电流.并进行了BiVO4光阳极光电流增加的机理分析.
        W-doped BiVO4 photoanode was obtained through drop-casting method.The physical and photophysical properties of the BiVO4 photoanode were investigated by X-ray diffraction(XRD),UV-vis absorption spectroscopy and scanning electron microscopy(SEM).Photo-electrochemical performance was evaluated for the W-doped BiVO4 photoanode.In terms of maximizing the photoelectrochemical performances of the W-doped BiVO4 photoanodes,the synthesis conditions were optimized.The W-doped BiVO4 photoanode exhibits improved photoelectrochemical performance after the electrochemical surface pretreatment.The photoelctrochemical response of BiVO4 photoanode can be improved by both tungsten doping and the electrochemical surface pretreatment.A possible mechanism was also proposed to explain the reason for the photocurrent enhancement.
引文
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