水热法合成Zn_(1-x)Co_xS纳米棒的光学性能
|
摘要
以乙二胺为修饰剂,采用水热法合成了不同掺杂浓度的Zn_(1-x)Co_xS(x=0.00,0.01,0.03,0.05,0.07)纳米棒,并通过X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、高分辨透射电子显微镜(HRTEM)、X射线能量色散分析谱仪(EDS)、紫外-可见吸收光谱(UV-vis)、光致发光光谱(PL)和傅里叶红外光谱(FT-IR)对样品的晶体结构、形貌和光学性能进行表征。结果表明,所有样品都具有结晶良好的六方纤锌矿结构,样品中掺杂的Co~(2+)以替代Zn~(2+)的形式进入到ZnS晶格中。形貌为一维的纳米棒状,分散性良好。随着Co掺杂量的增加,晶胞体积逐渐减小,晶粒尺寸增大,晶格常数发生收缩。UV-vis光谱发现掺杂样品的光学带隙发生了红移现象。PL谱图表明样品存在紫光(402 nm)、蓝光(470 nm)、黄光(600 nm)和红外光(826 nm)4个明显的发光峰,随着Co掺杂浓度的增加,发光强度呈减小趋势。红外光谱的吸收峰位并没有随着掺杂浓度的增加而发生变化。
Co-doped Zn_(1-x)Co_xS(x=0,0.01,0.03,0.05,0.07)nanorods were synthesized by a hydrothermal method using ethylenediamine as a modifier.The crystal microstructure,morphology and optical properties of the sample were characterized by X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),high-resolution transmission electron microscopy(HRTEM),X-ray energy dispersive spectrometry(EDS),ultraviolet-visible diffuse reflectance spectroscopy(UV-vis DRS),photoluminescence spectra(PL)and Fourier transform infrared spectroscopy(FT-IR).The results show that all the samples synthesized by this method possess wurtzite structure with good crystallization,which indicates that all Co~(2+)successfully replaces the lattice sites of Zn~(2+)to generate single-phase Zn_(1-x)Co_xS.The morphology is one-dimensional rod-like shape with good dispersion.The grain size increases,the cell volume decreases and the lattice constant shrinks with the increase of Co content.The UV-vis spectra reveal that the red shift of band gap occurs in the doped Zn_(1-x)Co_xS nanorods compared with the pure ZnS.The PL spectra show that the samples have obvious violet(402 nm),blue(470 nm,yellow(600 nm)and infrared(826 nm)emission peaks,and the luminescence intensity decreases with the increase of the Co doping concentration.The FT-IR spectrum shows that the absorption peak position does not change with the increase of the Co doping concentration.
Co-doped Zn_(1-x)Co_xS(x=0,0.01,0.03,0.05,0.07)nanorods were synthesized by a hydrothermal method using ethylenediamine as a modifier.The crystal microstructure,morphology and optical properties of the sample were characterized by X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),high-resolution transmission electron microscopy(HRTEM),X-ray energy dispersive spectrometry(EDS),ultraviolet-visible diffuse reflectance spectroscopy(UV-vis DRS),photoluminescence spectra(PL)and Fourier transform infrared spectroscopy(FT-IR).The results show that all the samples synthesized by this method possess wurtzite structure with good crystallization,which indicates that all Co~(2+)successfully replaces the lattice sites of Zn~(2+)to generate single-phase Zn_(1-x)Co_xS.The morphology is one-dimensional rod-like shape with good dispersion.The grain size increases,the cell volume decreases and the lattice constant shrinks with the increase of Co content.The UV-vis spectra reveal that the red shift of band gap occurs in the doped Zn_(1-x)Co_xS nanorods compared with the pure ZnS.The PL spectra show that the samples have obvious violet(402 nm),blue(470 nm,yellow(600 nm)and infrared(826 nm)emission peaks,and the luminescence intensity decreases with the increase of the Co doping concentration.The FT-IR spectrum shows that the absorption peak position does not change with the increase of the Co doping concentration.
引文
[1]Bui D,Phan V N.Annals of Physics[J],2016,375:313
[2]K?seo?lu Y.Ceramics International[J],2016,42(7):9190
[3]Güney H,Co?kun C,Meral K et al.Superlattices and Microstructures[J],2016,94:178
[4]Chang C J,Chu K W,Hsu M H et al.International Journal of Hydrogen Energy[J],2015,40(42):14 498
[5]Cao J,Liu Q Y,Han D L et al.RSC Advances[J],2014,4(58):30 798
[6]Kim J Y,Kim H,Shang H P et al.Organic Electronics[J],2012,13(12):2959
[7]Iqbal M J,Iqbal S.Journal of Luminescence[J],2013,134:739
[8]Tang J S,Wang K L.Nanoscale[J],2015,7(10):4325
[9]Nasser R,Elhouichet H,Férid M.Applied Surface Science[J],2015,351:1122
[10]Saikia D,Raland R D,Borah J P.Physica E:Lowdimensional Systems and Nanostructures[J],2016,83:56
[11]Maheshwari R C,Tripathi R K.Bulletin of Materials Science[J],1983,5(5):405
[12]Poornaprakash B,Ramu S,Park S H et al.Materials Letters[J],2016,164:104
[13]Poornaprakash B,Naveen Kumar K N,Chalapathi U et al.Journal of Materials Science:Materials in Electronics[J],2016,27(6):6474
[14]Poornaprakash B,Poojitha P T,Chalapathi U et al.Materials Letters[J],2016,181:227
[15]Yang P,LüM,XüD et al.Applied Physics A:Materials Science&Processing[J],2002,74(2):257
[16]Patel S P,Pivin J C,Patel M K et al.Journal of Magnetism and Magnetic Materials[J],2012,324(13):2136
[17]Priyadharsini N,Elango M,Vairam S et al.Materials Science in Semiconductor Processing[J],2016,49:68
[18]Kar S,Chaudhuri S.Chemical Physics Letters[J],2005,414(1-3):40
[19]Biswas S,Kar S,Chaudhuri S.The Journal of Physical Chemistry B[J],2005,109(37):17 526
[20]Khan W S,Cao C B,Ali Z et al.Materials Letters[J],2011,65(14):2127
[21]Zhao J G,Jia C W,Duan H G et al.Journal of Alloys and Compounds[J],2008,461(1-2):447
[22]Kumar S,Verma N K.Journal of Materials Science:Materials in Electronics[J],2014,25(2):785
[23]Reddy D A,Murali G,Poornaprakash B et al.Applied Surface Science[J],2012,258(13):5206
[2]K?seo?lu Y.Ceramics International[J],2016,42(7):9190
[3]Güney H,Co?kun C,Meral K et al.Superlattices and Microstructures[J],2016,94:178
[4]Chang C J,Chu K W,Hsu M H et al.International Journal of Hydrogen Energy[J],2015,40(42):14 498
[5]Cao J,Liu Q Y,Han D L et al.RSC Advances[J],2014,4(58):30 798
[6]Kim J Y,Kim H,Shang H P et al.Organic Electronics[J],2012,13(12):2959
[7]Iqbal M J,Iqbal S.Journal of Luminescence[J],2013,134:739
[8]Tang J S,Wang K L.Nanoscale[J],2015,7(10):4325
[9]Nasser R,Elhouichet H,Férid M.Applied Surface Science[J],2015,351:1122
[10]Saikia D,Raland R D,Borah J P.Physica E:Lowdimensional Systems and Nanostructures[J],2016,83:56
[11]Maheshwari R C,Tripathi R K.Bulletin of Materials Science[J],1983,5(5):405
[12]Poornaprakash B,Ramu S,Park S H et al.Materials Letters[J],2016,164:104
[13]Poornaprakash B,Naveen Kumar K N,Chalapathi U et al.Journal of Materials Science:Materials in Electronics[J],2016,27(6):6474
[14]Poornaprakash B,Poojitha P T,Chalapathi U et al.Materials Letters[J],2016,181:227
[15]Yang P,LüM,XüD et al.Applied Physics A:Materials Science&Processing[J],2002,74(2):257
[16]Patel S P,Pivin J C,Patel M K et al.Journal of Magnetism and Magnetic Materials[J],2012,324(13):2136
[17]Priyadharsini N,Elango M,Vairam S et al.Materials Science in Semiconductor Processing[J],2016,49:68
[18]Kar S,Chaudhuri S.Chemical Physics Letters[J],2005,414(1-3):40
[19]Biswas S,Kar S,Chaudhuri S.The Journal of Physical Chemistry B[J],2005,109(37):17 526
[20]Khan W S,Cao C B,Ali Z et al.Materials Letters[J],2011,65(14):2127
[21]Zhao J G,Jia C W,Duan H G et al.Journal of Alloys and Compounds[J],2008,461(1-2):447
[22]Kumar S,Verma N K.Journal of Materials Science:Materials in Electronics[J],2014,25(2):785
[23]Reddy D A,Murali G,Poornaprakash B et al.Applied Surface Science[J],2012,258(13):5206