Preparation of WO_3 thin films by dip film-drawing for photoelectrochemical performance
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  • 英文篇名:Preparation of WO_3 thin films by dip film-drawing for photoelectrochemical performance
  • 作者:Dongbo ; Xu ; Lili ; Li ; Weiqiang ; Fan ; Fagen ; Wang ; Hongye ; Bai ; Baodong ; Mao ; Weidong ; Shi
  • 英文作者:Dongbo Xu;Lili Li;Weiqiang Fan;Fagen Wang;Hongye Bai;Baodong Mao;Weidong Shi;School of Energy and Power Engineering, Jiangsu University;School of Chemistry and Chemical Engineering, Jiangsu University;
  • 英文关键词:WO_3 thin films;;Dip film-drawing;;Photoelectrochemical;;Thicknesses;;Large-scale
  • 中文刊名:ZHGC
  • 英文刊名:中国化学工程学报(英文版)
  • 机构:School of Energy and Power Engineering, Jiangsu University;School of Chemistry and Chemical Engineering, Jiangsu University;
  • 出版日期:2019-05-15
  • 出版单位:Chinese Journal of Chemical Engineering
  • 年:2019
  • 期:v.27
  • 基金:Supported by the National Natural Science Foundation of China(21522603,21477050,21401082,21503142,21671083);; Six Talent Peaks Project in Jiangsu Province(XCL-025);; and the Chinese-German Cooperation Research Project(GZ1091);; Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX17_1774);; the Excellent Youth Foundation of Jiangsu Scientific Committee(BK20170526)
  • 语种:英文;
  • 页:ZHGC201905028
  • 页数:5
  • CN:05
  • ISSN:11-3270/TQ
  • 分类号:237-241
摘要
Here we report the WO_3 thin films on F-doped SnO_2 conducting glass(FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO_3 thin film photoanodes. Then the photoanodes were employed as the electrodes in photoelectrochemical property measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedance spectroscopy and incident photon to current conversion efficiency, respectively. The results showed that the WO_3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm~/(-2) at 1.23 V versus RHE.
        Here we report the WO_3 thin films on F-doped SnO_2 conducting glass(FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO_3 thin film photoanodes. Then the photoanodes were employed as the electrodes in photoelectrochemical property measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedance spectroscopy and incident photon to current conversion efficiency, respectively. The results showed that the WO_3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm~/(-2) at 1.23 V versus RHE.
引文
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