中频非平衡磁控溅射TiAlN薄膜的结构与性能
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  • 英文篇名:Microstructure and Properties of TiAlN Films Prepared by Mid-frequency Non-equilibrium Magnetron Sputtering
  • 作者:安小建 ; 赵广彬 ; 程玺儒 ; 左龙 ; 左伟峰
  • 英文作者:AN Xiaojian;ZHAO Guangbin;CHEN Xiru;ZUO Long;ZUO Weifeng;School of Materials Science and Engineering,Xihua University;
  • 关键词:TiAlN薄膜 ; 磁控溅射 ; 力学性能
  • 英文关键词:TiAlN thin film;;magnetron sputtering;;mechanical properties
  • 中文刊名:SCGX
  • 英文刊名:Journal of Xihua University(Natural Science Edition)
  • 机构:西华大学材料科学与工程学院;
  • 出版日期:2017-07-06 19:04
  • 出版单位:西华大学学报(自然科学版)
  • 年:2017
  • 期:v.36;No.157
  • 基金:“高档数控机床与基础制造装备”科技重大专项资助(2009ZX04012-23);; 四川省特种材料及制备技术重点实验室经费资助(SZJJ2009-016);; 西华大学研究生创新基金项目资助(Ycjj2014045)
  • 语种:中文;
  • 页:SCGX201704012
  • 页数:5
  • CN:04
  • ISSN:51-1686/N
  • 分类号:84-88
摘要
采用中频非平衡磁控溅射离子镀设备在YG10硬质合金表面制备(Ti_(1-x)Al_x)N薄膜,运用X线衍射仪、扫描电子显微镜、显微硬度计和材料表面性能测试仪等对薄膜进行表征,分析氮气分压、直流偏压和Al含量对薄膜的力学性能、薄膜成分和组织结构的影响。结果表明:薄膜呈柱状多晶组织,主要组成相为(Ti,Al)N相;随着氮气分压增大,膜层中氮原子增多,而铝、钛原子含量减少,膜层中rAl/(Al+Ti)与r(Al+Ti)/N均下降,薄膜(111)晶面取向减弱,(220)和(200)晶面取向增强。力学性能测试表明,随着膜层中的Al含量和直流偏压升高,薄膜硬度、膜厚和膜-基结合力均呈现先升高后降低的趋势,薄膜显微硬度最高2 915 HV,膜-基结合力最高达73 N。
        (Ti_(1-x)Al_x) N films were prepared on YG10-cemented tungsten carbide surface by using mid-frequency non-equilibrium magnetron sputtering. The films 'properties were characterized by X-ray diffraction( XRD),scanning electron microscopy( SEM),and microhardness and surface property testing. Effects of nitrogen partial pressure,DC bias voltage,and Al content on the mechanical properties,composition,and microstructure of the films were investigated. The films were composed of( Ti,Al) N columnar crystals. The concentration of nitrogen in the film increased with the increasing of nitrogen partial pressure,while the concentrations of Al and Ti,the atom ratios rAl/( Al + Ti)and r( Al + Ti)/Nwere decreased. The( 111) crystal orientation became less prominent,and the( 220) and( 200) orientations became predominant. Mechanical testing show that,with the increasing of Al concentration and DC bias voltage,the film hardness and thickness,along with the binding force between the film and substrate,all initially increase and then decrease. The maximum microhardness of the films is 2915 HV,and the maximum binding force between the film and substrate is 73 N.
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