Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
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摘要
The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
引文
[1]Jiang L R, Liu J P, Tian A Q, et al. GaN-based green laser diodes. J Semicond, 2016, 37, 111001
[2]Crump P, Erbert G, Wenzel H, et al. Efficient high-power laser diodes. J Sel Top Quantum Electron, 2013, 19, 1501211
[3]Piprek J, States U. What limits the power conversion efficiency of GaN-based lasers. SPIE, 2017, 98, 3
[4]Miyoshi T, Masui S, Okada T, et al. 510–515 nm InGaN-based green laser diodes on c-plane GaN substrate. Appl Phys Express,2009, 2(6), 062201
[5]Yamaguchi A A, Kuramoto M, Nido M, et al. An alloy semiconductor system with a tailorable band-tail and its applications to high-performance laser operation:I. A band-states model for an alloy-fluctuated InGaN material system designed for quantum well laser operation. Semicond Sci Technol, 2001, 16, 763
[6]Chow W W, Wright A F, Girndt A, et al. Microscopic theory of gain for an InGaN/AlGaN quantum well laser. Appl Phys Lett, 1997, 71,2608
[7]ButtéR, Lahourcade L, U?davinys T K, et al. disorder and growth mode induced fluctuations optical absorption edge broadening in thick InGaN layers:Random alloy atomic disorder and growth mode induced fluctuations. Appl Phys Lett, 2018, 112, 032106
[8]Glauser M, Rossbach G, et al. Investigation of InGaN/GaN quantum wells for polariton laser diodes. Phys Status Solidi, 2012,9(5), 1325
[9]Schwarz U T. Investigation and comparison of optical gain spectra of(Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range. Proc SPIE, 2007, 648506
[10]Hakki B W, Paoli T L. cw degradation at 300 K of GaAs double-heterostructure junction laser. II. Electronic gain. J Appl Phys, 1973,44, 4113
[11]Hakki B W, Paoli T L. Gain spectra in GaAs double-heterostructure injection lasers. J Appl Phys, 1974, 46, 1299
[12]Chuang S L, Chang C S. k·p method for strained wurtzite semiconductors. Phys Rev B, 1996, 54, 2941
[13]Lew Yan Voon L C, Willatzen M. The k·p method:electronic properties of semiconductors. Springer, 2009
[14]Chow W W, Koch S W. Semiconductor-laser fundamentals:physics of the gain materials. Spring, 1999, 12
[15]Zhao H P, Arif R A, Tansu N. Self-consistent gain analysis of type-II self-consistent gain analysis of type-II ‘W’ InGaN-GaNAs quantum well. J Appl Phys, 2016, 104, 043104
[16]Piprek J. Optoelectronic devices:advanced simulation and analysis. New York:Springer, 2003, 304
[17]Yariv A. Quantum electronics. New York:Wiley, 1967
[18]Portis A. Inhomogeneous line-broadening in F centers. Phys Rev,1971, 91, 1071
[19]Li Q. A model for steady-state luminescence of localized-state ensemble. Europhys Lett, 2005, 71(6), 994
[20]Li Q. Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Appl Phys Lett,2001, 79, 1810
[21]Schwarz U T, Sturm E, Wegscheider W, et al. Gain spectra and current-induced change of refractive index in(In/Al)GaN diode lasers. Phys Status Solidi A, 2003, 200, 143
[22]Bergmann M J, Casey H C. Optical-field calculations for lossy multiple-layer Alx Ga1-x N/Inx Ga1-x N laser diodes. J Appl Phys, 1998,84(3), 1196
[23]Lermer T, Schillgalies M, Breidenassel A, et al. Waveguide design of green InGaN laser diodes. Phys Status Solidi A, 2010, 207, 1328
[24]Zhang L, Jiang D, Zhu J, et al. Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green. J Appl Phys, 2009, 105, 023104
[2]Crump P, Erbert G, Wenzel H, et al. Efficient high-power laser diodes. J Sel Top Quantum Electron, 2013, 19, 1501211
[3]Piprek J, States U. What limits the power conversion efficiency of GaN-based lasers. SPIE, 2017, 98, 3
[4]Miyoshi T, Masui S, Okada T, et al. 510–515 nm InGaN-based green laser diodes on c-plane GaN substrate. Appl Phys Express,2009, 2(6), 062201
[5]Yamaguchi A A, Kuramoto M, Nido M, et al. An alloy semiconductor system with a tailorable band-tail and its applications to high-performance laser operation:I. A band-states model for an alloy-fluctuated InGaN material system designed for quantum well laser operation. Semicond Sci Technol, 2001, 16, 763
[6]Chow W W, Wright A F, Girndt A, et al. Microscopic theory of gain for an InGaN/AlGaN quantum well laser. Appl Phys Lett, 1997, 71,2608
[7]ButtéR, Lahourcade L, U?davinys T K, et al. disorder and growth mode induced fluctuations optical absorption edge broadening in thick InGaN layers:Random alloy atomic disorder and growth mode induced fluctuations. Appl Phys Lett, 2018, 112, 032106
[8]Glauser M, Rossbach G, et al. Investigation of InGaN/GaN quantum wells for polariton laser diodes. Phys Status Solidi, 2012,9(5), 1325
[9]Schwarz U T. Investigation and comparison of optical gain spectra of(Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range. Proc SPIE, 2007, 648506
[10]Hakki B W, Paoli T L. cw degradation at 300 K of GaAs double-heterostructure junction laser. II. Electronic gain. J Appl Phys, 1973,44, 4113
[11]Hakki B W, Paoli T L. Gain spectra in GaAs double-heterostructure injection lasers. J Appl Phys, 1974, 46, 1299
[12]Chuang S L, Chang C S. k·p method for strained wurtzite semiconductors. Phys Rev B, 1996, 54, 2941
[13]Lew Yan Voon L C, Willatzen M. The k·p method:electronic properties of semiconductors. Springer, 2009
[14]Chow W W, Koch S W. Semiconductor-laser fundamentals:physics of the gain materials. Spring, 1999, 12
[15]Zhao H P, Arif R A, Tansu N. Self-consistent gain analysis of type-II self-consistent gain analysis of type-II ‘W’ InGaN-GaNAs quantum well. J Appl Phys, 2016, 104, 043104
[16]Piprek J. Optoelectronic devices:advanced simulation and analysis. New York:Springer, 2003, 304
[17]Yariv A. Quantum electronics. New York:Wiley, 1967
[18]Portis A. Inhomogeneous line-broadening in F centers. Phys Rev,1971, 91, 1071
[19]Li Q. A model for steady-state luminescence of localized-state ensemble. Europhys Lett, 2005, 71(6), 994
[20]Li Q. Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Appl Phys Lett,2001, 79, 1810
[21]Schwarz U T, Sturm E, Wegscheider W, et al. Gain spectra and current-induced change of refractive index in(In/Al)GaN diode lasers. Phys Status Solidi A, 2003, 200, 143
[22]Bergmann M J, Casey H C. Optical-field calculations for lossy multiple-layer Alx Ga1-x N/Inx Ga1-x N laser diodes. J Appl Phys, 1998,84(3), 1196
[23]Lermer T, Schillgalies M, Breidenassel A, et al. Waveguide design of green InGaN laser diodes. Phys Status Solidi A, 2010, 207, 1328
[24]Zhang L, Jiang D, Zhu J, et al. Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green. J Appl Phys, 2009, 105, 023104