六面顶低温超高压烧结制备SiC–Al_2O_3–Y_2O_3陶瓷
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摘要
以微纳米SiC为原料,采用六面顶压机在1 250℃、4.5 GPa、无烧结助剂、不同保温时间条件下烧结SiC陶瓷,优化出最佳保温时间为6 min。采用不同添加量Al_2O_3、Y_2O_3(0~15%,质量分数)烧结助剂超高压烧结SiC陶瓷。用X射线衍射、场发射扫描电子显微镜、X射线能谱分析、显微硬度及密度测试对SiC高压烧结体进行了表征。结果表明:同时添加Al_2O_3和Y_2O_3为有效低温烧结助剂,在低温超高压烧结条件下,掺杂不同比例烧结助剂的SiC陶瓷产生的新相为Al_2Y_4O_9。其中,添加7.5%Al_2O_3、7.5%Y_2O_3,经1 250℃、4.5 GPa保温保压6 min超高压烧结条件下,样品相对密度达99.9%,显微硬度可达到HV9.80 2 570。
High density SiC ceramic was fabricated with pure SiC micro-and nano-powders in a hinge-type cubic-anvil press method at 4.5 GPa and 1 250 ℃ for an optimum heat-preserving time of 6 min. SiC ceramic was sinterred at a ultrahigh pressure and different amounts of Al_2O_3, Y_2O_3(0-15% in mass fraction) as sintering aids. The samples were characterized by X-ray diffraction, field emission electron microscopy, X-ray energy spectroscopy, micro-hardness and density tests, respectively. The result shows that the Al_2O_3 and Y_2O_3 are effective in low-temperature sintering. At a low temperature and a ultrahigh pressure, SiC ceramic can appear a phase of Al_2Y_4O_9. The relative density of sample sintered with Al_2O_3 of 7.5% and Y_2O_3 of 7.5% at 4.5 GPa and 1 250 ℃ for 6 min is 99.9%, and the micro-hardness can reach HV9.80 2 570.
High density SiC ceramic was fabricated with pure SiC micro-and nano-powders in a hinge-type cubic-anvil press method at 4.5 GPa and 1 250 ℃ for an optimum heat-preserving time of 6 min. SiC ceramic was sinterred at a ultrahigh pressure and different amounts of Al_2O_3, Y_2O_3(0-15% in mass fraction) as sintering aids. The samples were characterized by X-ray diffraction, field emission electron microscopy, X-ray energy spectroscopy, micro-hardness and density tests, respectively. The result shows that the Al_2O_3 and Y_2O_3 are effective in low-temperature sintering. At a low temperature and a ultrahigh pressure, SiC ceramic can appear a phase of Al_2Y_4O_9. The relative density of sample sintered with Al_2O_3 of 7.5% and Y_2O_3 of 7.5% at 4.5 GPa and 1 250 ℃ for 6 min is 99.9%, and the micro-hardness can reach HV9.80 2 570.
引文
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[6]BAUD S,THEYENOT F,CHATILLON C.High temperature sintering of Si C with oxide additives:Ⅱ.Vaporization processes in powder beds and gas-phase analysis by mass spectrometry[J].J Eur Ceram Soc,2003,23(1):9-18.
[7]BHAUMIK S K,DIVAKAR C,USHA DEVI S,et al.Synthesis and sintering of Si C under high pressure and high temperature[J].J Mater Res,1999,14(3):906-911.
[8]谢茂林,罗德礼,鲜晓斌,等.无烧结助剂Si C陶瓷的高压烧结研究[J].中国陶瓷,2009,45(1):19-22.XIE Maolin,LUO Deli,XIAN Xiaobin,et al.China Ceram(in Cheinese),2009,45(1):19-22.
[9]鲜晓斌,谢茂林,罗德礼,等.纳米Si C陶瓷的超高压烧结研究[J].硅酸盐学报,2009,37(7):1268-1272.XIAN Xiaobin,XIE Maolin,LUO Deli,et al.J Chin Ceram Soc,2009,37(7):1268-1272.
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