基于YAG∶Ce~(3+)荧光粉复合Eu~(3+)掺杂荧光玻璃的激光照明器件
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摘要
采用结晶法和低温共烧结法制备了Eu~(3+)掺杂的Y_3Al_5O_(12)∶Ce~(3+)荧光玻璃,对制备出的样品进行能量色散X射线谱和光致发光光谱测试,表明稀土离子Eu~(3+)与YAG∶Ce~(3+)荧光粉已掺入荧光玻璃。掺杂不同含量Eu_2O_3的YAG∶Ce~(3+)荧光玻璃封装成的激光照明器件在驱动电流100 mA下,经过STC-4000快速光谱仪和PMS-80可见光谱分析系统测试,掺杂质量分数1%YAG∶Ce~(3+)复合质量分数9%的Eu~(3+)的荧光玻璃封装的激光照明器件发光效率为267.1 lm/W。激光照明器件随着电流的增加,其显色指数逐渐增大,但增加幅度较小。
The Eu~(3+) doped Y_3Al_5O_(12)∶Ce~(3+) phosphor-in-glasses(PIGs) was prepared by crystallization and low temperature co-sintering. The prepared samples were tested by energy dispersive X-ray and photoluminescence spectroscopy, indicating that the rare earth ions Eu~(3+) and YAG∶Ce~(3+) phosphors have been incorporated into the PIG. YAG∶Ce~(3+) PIG with different content of Eu_2O_3 is packaged in a laser illumination device with a driving current of 100 mA. It is tested by STC-4000 fast spectrometer and PMS-80 visible spectrum analysis system, doping mass fraction 1% YAG∶Ce~(3+) composite mass fraction 9% Eu~(3+) phosphor-in-glasses encapsulated laser lighting device luminous efficacy is 267.1 lm/W. As the current of laser illumination devices increases, the color rendering index increases gradually, but the increase is small.
The Eu~(3+) doped Y_3Al_5O_(12)∶Ce~(3+) phosphor-in-glasses(PIGs) was prepared by crystallization and low temperature co-sintering. The prepared samples were tested by energy dispersive X-ray and photoluminescence spectroscopy, indicating that the rare earth ions Eu~(3+) and YAG∶Ce~(3+) phosphors have been incorporated into the PIG. YAG∶Ce~(3+) PIG with different content of Eu_2O_3 is packaged in a laser illumination device with a driving current of 100 mA. It is tested by STC-4000 fast spectrometer and PMS-80 visible spectrum analysis system, doping mass fraction 1% YAG∶Ce~(3+) composite mass fraction 9% Eu~(3+) phosphor-in-glasses encapsulated laser lighting device luminous efficacy is 267.1 lm/W. As the current of laser illumination devices increases, the color rendering index increases gradually, but the increase is small.
引文
[1] TSAO J Y.Solid-state lighting:lamps,chips,and materials for tomorrow [J].IEEE Circuits Devices Mag.,2004,20(3):28-37.
[2] 史光国.半导体发光二级管及固体照明 [M].北京:科学出版社,2007.SHI G G.Semiconductor Light-emitting Diodes and Solid-state Lighting [M].Beijing:Science Press,2007.(in Chinese)
[3] STEIGERWALD D A,BHAT J C,COLLINS D,et al..Illumination with solid state lighting technology [J].IEEE J.Sel.Top.Quantum Electron.,2002,8(2):310-320.
[4] 徐时清,金尚忠,王宝玲,等.固体照明光源-白光LED的研究进展 [J].中国计量学院学报,2006,17(3):188-191.XU S Q,JIN S Z,WANG B L,et al..Solid state lighting-recent progress in research of white light emitting diodes [J].J.China Jiliang Univ.,2006,17(3):188-191.(in Chinese)
[5] 肖芬.紫外激发白光LED荧光粉的制备及发光特性研究 [D].广州:华南理工大学,2011.XIAO F.Preparation and Luminescence Properties of Phosphors for UV Excited White Light-emitting Diodes [D].Guangzhou:South China University of Technology,2011.(in Chinese)
[6] 陶岳彬.GaN基大功率蓝光LED的MOCVD生长和改善效率骤降特性的研究 [D].北京:北京大学,2011.TAO Y B.Research on MOCVD Growth and Improvement Efficiency Drop Characteristics of GaN-based High Power Blue LEDs [D].Beijing:Peking University,2011.(in Chinese)
[7] KOECHNER W.Solid-state Laser Engineering [M].New York:Springer,2006.
[8] RAZUM N J.Laser physics [J].Facial Plast.Surg.,1989,6(3):137-143.
[9] THOMAS G,ISAACS R.Basic principles of lasers [J].Anaesth.Intensive Care Med.,2011,12(12):574-577.
[10] HERREROS D N,FANG X.Laser ignition of elastomer-modified cast double-base (EMCDB) propellant using a diode laser [J].Opt.Laser Technol.,2017,89:21-26.
[11] SELIMIS A,MIRONOV V,FARSARI M.Direct laser writing:principles and materials for Scaffold 3D printing [J].Microelectron.Eng.,2015,132:83-89.
[12] RODRIGUES G C,DUFLOU J R.Opportunities in laser cutting with direct diode laser configurations [J].CIRP Ann.,2017,66(1):245-248.
[13] ABSTEN G T.Physics of light and lasers [J].Obstet.Gynecol.Clin.North Am.,1991,18(3):407-427.
[14] LIU H,SUN C L,WANG W S,et al..Design of a LCOS laser projector [J].Optik,2015,126(15-16):1483-1486.
[15] NARUKAWA Y,NAGAHAMA S I,TAMAKI H,et al..Development of high-luminance white light source using GaN-based light emitting devices [J].應用物理,2005,74(11):1423-1432.
[16] KOZAKI T,NAGAHAMA S,MUKAI T.Recent progress of high-power GaN-based laser diodes [C].Proceedings Volume 6485,Novel In-plane Semiconductor Lasers VI,San Jose,California,USA,2007,6485:648503.
[17] DENAULT K A,CANTORE M,NAKAMURA S,et al..Efficient and stable laser-driven white lighting [J].AIP Adv.,2013,3(7):072107-1-7.
[18] WIERERJR J J,TSAO J Y,SIZOV D S.The potential of Ⅲ-nitride laser diodes for solid-state lighting [J].Phys.Status Solidi C,2014,11(3-4):674-677.
[19] 许礼强.基于激光远程激发荧光粉(LARP)技术的新型白光光源研究 [D].深圳:深圳大学,2015.XU L Q.Study on New White Light Source base on LARP Technology [D].Shenzhen:Shenzhen University,2015.(in Chinese)
[20] 王子明,黄笑彤,杨波波,等.低温共烧结制备Lu2.94-xYxAl5O12∶0.06Ce荧光玻璃的研究 [J].光电技术应用,2017,32(6):39-43.WANG Z M,HUANG X T,YANG B B,et al..Preparation of Lu2.94-xYxAl5O12∶0.06Ce phosphor in glass by low-temperature co-sintering method [J].Electro-Opt.Technol.Appl.,2017,32(6):39-43.(in Chinese)
[21] KINOSHITA J,IKEDA Y,TAKEDA Y,et al..Suppressed speckle contrast of blue light emission out of white lamp with phosphors excited by blue laser diodes for high-brightness lighting applications [J].Opt.Rev.,2012,19(6):427-431.
[22] 武传雷.YAG荧光粉的制备和性能研究 [D].上海:上海师范大学,2013.WU C L.Preparation and Properties of YAG Phosphors [D].Shanghai:Shanghai Normal University,2013.(in Chinese)
[2] 史光国.半导体发光二级管及固体照明 [M].北京:科学出版社,2007.SHI G G.Semiconductor Light-emitting Diodes and Solid-state Lighting [M].Beijing:Science Press,2007.(in Chinese)
[3] STEIGERWALD D A,BHAT J C,COLLINS D,et al..Illumination with solid state lighting technology [J].IEEE J.Sel.Top.Quantum Electron.,2002,8(2):310-320.
[4] 徐时清,金尚忠,王宝玲,等.固体照明光源-白光LED的研究进展 [J].中国计量学院学报,2006,17(3):188-191.XU S Q,JIN S Z,WANG B L,et al..Solid state lighting-recent progress in research of white light emitting diodes [J].J.China Jiliang Univ.,2006,17(3):188-191.(in Chinese)
[5] 肖芬.紫外激发白光LED荧光粉的制备及发光特性研究 [D].广州:华南理工大学,2011.XIAO F.Preparation and Luminescence Properties of Phosphors for UV Excited White Light-emitting Diodes [D].Guangzhou:South China University of Technology,2011.(in Chinese)
[6] 陶岳彬.GaN基大功率蓝光LED的MOCVD生长和改善效率骤降特性的研究 [D].北京:北京大学,2011.TAO Y B.Research on MOCVD Growth and Improvement Efficiency Drop Characteristics of GaN-based High Power Blue LEDs [D].Beijing:Peking University,2011.(in Chinese)
[7] KOECHNER W.Solid-state Laser Engineering [M].New York:Springer,2006.
[8] RAZUM N J.Laser physics [J].Facial Plast.Surg.,1989,6(3):137-143.
[9] THOMAS G,ISAACS R.Basic principles of lasers [J].Anaesth.Intensive Care Med.,2011,12(12):574-577.
[10] HERREROS D N,FANG X.Laser ignition of elastomer-modified cast double-base (EMCDB) propellant using a diode laser [J].Opt.Laser Technol.,2017,89:21-26.
[11] SELIMIS A,MIRONOV V,FARSARI M.Direct laser writing:principles and materials for Scaffold 3D printing [J].Microelectron.Eng.,2015,132:83-89.
[12] RODRIGUES G C,DUFLOU J R.Opportunities in laser cutting with direct diode laser configurations [J].CIRP Ann.,2017,66(1):245-248.
[13] ABSTEN G T.Physics of light and lasers [J].Obstet.Gynecol.Clin.North Am.,1991,18(3):407-427.
[14] LIU H,SUN C L,WANG W S,et al..Design of a LCOS laser projector [J].Optik,2015,126(15-16):1483-1486.
[15] NARUKAWA Y,NAGAHAMA S I,TAMAKI H,et al..Development of high-luminance white light source using GaN-based light emitting devices [J].應用物理,2005,74(11):1423-1432.
[16] KOZAKI T,NAGAHAMA S,MUKAI T.Recent progress of high-power GaN-based laser diodes [C].Proceedings Volume 6485,Novel In-plane Semiconductor Lasers VI,San Jose,California,USA,2007,6485:648503.
[17] DENAULT K A,CANTORE M,NAKAMURA S,et al..Efficient and stable laser-driven white lighting [J].AIP Adv.,2013,3(7):072107-1-7.
[18] WIERERJR J J,TSAO J Y,SIZOV D S.The potential of Ⅲ-nitride laser diodes for solid-state lighting [J].Phys.Status Solidi C,2014,11(3-4):674-677.
[19] 许礼强.基于激光远程激发荧光粉(LARP)技术的新型白光光源研究 [D].深圳:深圳大学,2015.XU L Q.Study on New White Light Source base on LARP Technology [D].Shenzhen:Shenzhen University,2015.(in Chinese)
[20] 王子明,黄笑彤,杨波波,等.低温共烧结制备Lu2.94-xYxAl5O12∶0.06Ce荧光玻璃的研究 [J].光电技术应用,2017,32(6):39-43.WANG Z M,HUANG X T,YANG B B,et al..Preparation of Lu2.94-xYxAl5O12∶0.06Ce phosphor in glass by low-temperature co-sintering method [J].Electro-Opt.Technol.Appl.,2017,32(6):39-43.(in Chinese)
[21] KINOSHITA J,IKEDA Y,TAKEDA Y,et al..Suppressed speckle contrast of blue light emission out of white lamp with phosphors excited by blue laser diodes for high-brightness lighting applications [J].Opt.Rev.,2012,19(6):427-431.
[22] 武传雷.YAG荧光粉的制备和性能研究 [D].上海:上海师范大学,2013.WU C L.Preparation and Properties of YAG Phosphors [D].Shanghai:Shanghai Normal University,2013.(in Chinese)