Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application
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摘要
The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory(RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene(parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration(FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages(3.25 V for set voltage and-0.55 V for reset voltage), low static power consumption, high storage window and good retention properties(>10~4 s).A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.
The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory(RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene(parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration(FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages(3.25 V for set voltage and-0.55 V for reset voltage), low static power consumption, high storage window and good retention properties(>10~4 s).A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.
The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory(RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene(parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration(FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages(3.25 V for set voltage and-0.55 V for reset voltage), low static power consumption, high storage window and good retention properties(>10~4 s).A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.
引文
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14 Yang Y C,Gao P,Gaba S,et al.Observation of conducting filament growth in nanoscale resistive memories.Nat Commun,2012,3:732
15 Yu M X,Cai Y M,Wang Z W,et al.Novel vertical 3D structure of Ta Ox-based RRAM with self-localized switching region by sidewall electrode oxidation.Sci Rep,2016,6:21020
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18 Hudec B,Hsu C W,Wang I T,et al.3D resistive RAM cell design for high-density storage class memory—a review.Sci China Inf Sci,2016,59:061403
19 Shin G H,Kim C K,Bang G S,et al.Multilevel resistive switching nonvolatile memory based on Mo S2 nanosheetembedded graphene oxide.2D Mater,2016,3:034002
20 Puglisi F M,Larcher L,Pan C,et al.2D h-BN based RRAM devices.In:Proceedings IEEE International Electron Devices Meeting(IEDM),San Francisco,2016
21 Casula G,Cosseddu P,Bonfiglio A.Integration of an organic resistive memory with a pressure-sensitive element on a fully flexible substrate.Adv Electron Mater,2015,1:1500234
22 Son D,Chae S I,Kim M,et al.Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory.Adv Mater,2016,28:9326–9332
23 Choi J,Park S,Lee J,et al.Organolead halide perovskites for low operating voltage multilevel resistive switching.Adv Mater,2016,28:6562–6567
24 Wang C Y,Gu P Y,Hu B L,et al.Recent progress in organic resistance memory with small molecules and inorganicorganic hybrid polymers as active elements.J Mater Chem C,2015,3:10055–10065
25 Liu G,Zhuang X D,Chen Y,et al.Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex.Appl Phys Lett,2009,95:253301
26 Nau S,Wolf C,Sax S,et al.Organic non-volatile resistive photo-switches for flexible image detector arrays.Adv Mater,2015,27:1048–1052
27 Pierre A,Gaikwad A,Arias A C.Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors.Nat Photon,2017,11:193–199
28 Yakunin S,Sytnyk M,Kriegner D,et al.Detection of X-ray photons by solution-processed lead halide perovskites.Nat Photon,2015,9:444–449
29 Tian L,Luo X L,Yin M,et al.Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film.Sci Bull,2017,62:130–135
30 Zhao Q,Huang C H,Li F Y.Phosphorescent heavy-metal complexes for bioimaging.Chem Soc Rev,2011,40:2508–2524
31 Fossum E R,Hondongwa D B.A review of the pinned photodiode for CCD and CMOS image sensors.IEEE J Electron Devices Soc,2014,2:33–43
32 Goossens S,Navickaite G,Monasterio C,et al.Broadband image sensor array based on graphene-CMOS integration.Nat Photon,2017,11:366–371
33 Theuwissen A J P.CMOS image sensors:state-of-the-art.Solid State Electron,2008,52:1401–1406
34 Huang W,Xu Z Y.Characteristics and performance of image sensor communication.IEEE Photon J,2017,9:7902919
35 El-Desouki M,Deen M J,Fang Q Y,et al.CMOS image sensors for high speed applications.Sensors,2009,9:430–444
36 Shin B,Park S,Shin H.The effect of photodiode shape on charge transfer in CMOS image sensors.Solid-State Electron,2010,54:1416–1420
37 Zhou Y F,Cao Z X,Han Y,et al.A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor.Sci China Inf Sci,2015,58:042406
38 Xue Y Y,Wang Z J,Liu M B,et al.Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods.Sci China Inf Sci,2017,60:120402
2 Gao W,Emaminejad S,Nyein H Y Y,et al.Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis.Nature,2016,529:509–514
3 Pang C,Lee C,Suh K Y.Recent advances in flexible sensors for wearable and implantable devices.J Appl Polym Sci,2013,130:1429–1441
4 Shao Y Y,Wang J,Wu H,et al.Graphene based electrochemical sensors and biosensors:a review.Electroanalysis,2010,22:1027–1036
5 Kim S,Jeong H Y,Kim S K,et al.Flexible memristive memory array on plastic substrates.Nano Lett,2011,11:5438–5442
6 Kim J,Lee M S,Jeon S,et al.Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures.Adv Mater,2015,27:3292–3297
7 Wang X F,Lu X H,Liu B,et al.Flexible energy-storage devices:design consideration and recent progress.Adv Mater,2014,26:4763–4782
8 Trung T Q,Lee N E.Flexible and stretchable physical sensor integrated platforms for wearable human-activity monitoringand personal healthcare.Adv Mater,2016,28:4338–4372
9 Lee H,Choi T K,Lee Y B,et al.A graphene-based electrochemical device with thermoresponsive microneedles for diabetes monitoring and therapy.Nat Nanotech,2016,11:566–572
10 Son D,Lee J,Qiao S T,et al.Multifunctional wearable devices for diagnosis and therapy of movement disorders.Nat Nano,2014,9:397–404
11 Pan F,Gao S,Chen C,et al.Recent progress in resistive random access memories:materials,switching mechanisms,and performance.Mater Sci Eng R Rep,2014,83:1–59
12 Wong H S P,Lee H Y,Yu S M,et al.Metal-oxide RRAM.Proc IEEE,2012,100:1951–1970
13 Liu Q,Sun J,Lv H B,et al.Real-time observation on dynamic growth/dissolution of conductive filaments in oxideelectrolyte-based Re RAM.Adv Mater,2012,24:1844–1849
14 Yang Y C,Gao P,Gaba S,et al.Observation of conducting filament growth in nanoscale resistive memories.Nat Commun,2012,3:732
15 Yu M X,Cai Y M,Wang Z W,et al.Novel vertical 3D structure of Ta Ox-based RRAM with self-localized switching region by sidewall electrode oxidation.Sci Rep,2016,6:21020
16 Cheng C H,Yeh F S,Chin A.Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance.Adv Mater,2011,23:902–905
17 Long S B,Liu Q,Lv H B,et al.Research progresses of resistive random access memory(in Chinese).Sci Sin-Phys Mech Astron,2016,46:107311
18 Hudec B,Hsu C W,Wang I T,et al.3D resistive RAM cell design for high-density storage class memory—a review.Sci China Inf Sci,2016,59:061403
19 Shin G H,Kim C K,Bang G S,et al.Multilevel resistive switching nonvolatile memory based on Mo S2 nanosheetembedded graphene oxide.2D Mater,2016,3:034002
20 Puglisi F M,Larcher L,Pan C,et al.2D h-BN based RRAM devices.In:Proceedings IEEE International Electron Devices Meeting(IEDM),San Francisco,2016
21 Casula G,Cosseddu P,Bonfiglio A.Integration of an organic resistive memory with a pressure-sensitive element on a fully flexible substrate.Adv Electron Mater,2015,1:1500234
22 Son D,Chae S I,Kim M,et al.Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory.Adv Mater,2016,28:9326–9332
23 Choi J,Park S,Lee J,et al.Organolead halide perovskites for low operating voltage multilevel resistive switching.Adv Mater,2016,28:6562–6567
24 Wang C Y,Gu P Y,Hu B L,et al.Recent progress in organic resistance memory with small molecules and inorganicorganic hybrid polymers as active elements.J Mater Chem C,2015,3:10055–10065
25 Liu G,Zhuang X D,Chen Y,et al.Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex.Appl Phys Lett,2009,95:253301
26 Nau S,Wolf C,Sax S,et al.Organic non-volatile resistive photo-switches for flexible image detector arrays.Adv Mater,2015,27:1048–1052
27 Pierre A,Gaikwad A,Arias A C.Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors.Nat Photon,2017,11:193–199
28 Yakunin S,Sytnyk M,Kriegner D,et al.Detection of X-ray photons by solution-processed lead halide perovskites.Nat Photon,2015,9:444–449
29 Tian L,Luo X L,Yin M,et al.Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film.Sci Bull,2017,62:130–135
30 Zhao Q,Huang C H,Li F Y.Phosphorescent heavy-metal complexes for bioimaging.Chem Soc Rev,2011,40:2508–2524
31 Fossum E R,Hondongwa D B.A review of the pinned photodiode for CCD and CMOS image sensors.IEEE J Electron Devices Soc,2014,2:33–43
32 Goossens S,Navickaite G,Monasterio C,et al.Broadband image sensor array based on graphene-CMOS integration.Nat Photon,2017,11:366–371
33 Theuwissen A J P.CMOS image sensors:state-of-the-art.Solid State Electron,2008,52:1401–1406
34 Huang W,Xu Z Y.Characteristics and performance of image sensor communication.IEEE Photon J,2017,9:7902919
35 El-Desouki M,Deen M J,Fang Q Y,et al.CMOS image sensors for high speed applications.Sensors,2009,9:430–444
36 Shin B,Park S,Shin H.The effect of photodiode shape on charge transfer in CMOS image sensors.Solid-State Electron,2010,54:1416–1420
37 Zhou Y F,Cao Z X,Han Y,et al.A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor.Sci China Inf Sci,2015,58:042406
38 Xue Y Y,Wang Z J,Liu M B,et al.Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods.Sci China Inf Sci,2017,60:120402