AlN单晶性质与AlGaN外延生长研究
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摘要
对物理气相传输法(PVT)生长的AlN单晶进行了性质表征,研究了单晶中的杂质和缺陷、发光性质和晶体结构等,结果表明该AlN单晶具有较高的晶体质量。用蓝宝石陪片辅助方法对AlN单晶进行了化学机械抛光,得到了厚度均匀、具有器件质量表面的AlN单晶片。利用MOCVD在AlN单晶片上外延了Al组分约为18.2%的AlGaN薄膜,其生长模式符合StranskiKrastanow模式。利用应变梯度模型解释了AlGaN外延层中应变状态和表面裂纹的形成机制。
The structural and optical properties of single-crystal AlN prepared by physical vapor transport(PVT) method were studied. The results show that PVT-AlN single crystal has high quality. AlN samples with the uniform thickness and device-quality surfaces have been obtained by a sapphire-aided CMP method. AlGaN epi-layers with the Al content of 18.2% have been grown on CMP-AlN substrates by metal-organic chemical vapor deposition(MOCVD). The tensile stress in nominally compressed AlGaN layer and the formation mechanism of surface cracks are explained by strain gradients model.
The structural and optical properties of single-crystal AlN prepared by physical vapor transport(PVT) method were studied. The results show that PVT-AlN single crystal has high quality. AlN samples with the uniform thickness and device-quality surfaces have been obtained by a sapphire-aided CMP method. AlGaN epi-layers with the Al content of 18.2% have been grown on CMP-AlN substrates by metal-organic chemical vapor deposition(MOCVD). The tensile stress in nominally compressed AlGaN layer and the formation mechanism of surface cracks are explained by strain gradients model.
引文
[1]金雷.物理气相传输法生长氮化铝晶体的机制研究[D].哈尔滨:哈尔滨工业大学博士论文, 2015.
[2] LOCHNER Z, KAO T T, LIU Y S, et al. Deep-ultraviolet Lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on Al N Substrate[J]. Applied Physics Letters, 2013, 102(10):15.
[3] KUMAR V, LU W, KHAN F A, et al. High performance0.25μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm[J]. Electronics Letters,2002, 38(5):252-253.
[4] KNEISSL M, BOUR D P, ROMANO L, et al. Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates[J].Applied Physics Letters, 2000, 77(13):1931-1933.
[5]杜家熙,苏建修,王占合,等.硬脆晶体基片化学机械抛光材料去除非均匀性形成机制研究[J].人工晶体学报, 2012, 41(4):1130-1137.DU J X, SU J X, WANG Z H, et al. Journal of Synthetic Crystals,2012, 41(4):1130-1137.
[6]李永安. GaN衬底材料相关技术研究[D].南京:南京大学硕士论文, 2015.
[7] DAVYDOV V Y, GONCHARUK I N, SMIRNOV A N, et al.Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys[J]. Physical Review B, 2002, 65(12):125203.
[8]赵有文,董志远,魏学成,等.升华法生长AlN体单晶初探[J].半导体学报, 2006,(7):1241-1245.ZHAOYW,DONGZY,WEIXC,etal.Journalof Semiconductors, 2006,(7):1241-1245.
[9] JADWISIENCZAK W M, LOZYKOWSKI H J, BERISHEV I,et al. Visible emission from AlN doped with Eu and Tb ions[J].Journal of Applied Physics, 2001, 89(8):4384-4390.
[10] YANG Y, ZHAO Q, ZHANG X Z, et al. Mn-doped AlN nanowires with room temperature ferromagnetic ordering[J].Applied Physics Letters, 2007, 90(9):092118-092118-3.
[11] SLACK G A, SCHWALTER L J, MORELLI D, et al. Some effects of oxygen impurities on AlN and GaN[J]. Journal of Crystal Growth, 2002, 246(3):287-298.
[12] MATTILA T, NIEMINEN R M. Ab initio study of oxygen point defects in GaAs, GaN and AlN[J]. Physical Review B,1996, 54(23):16676.
[13] SAKAI T, IWATA M. Effect of oxygen on sintering of AlN[J].Journal of Materials Science, 1977, 12(8):1659-1665.
[14] GUGUSCHEY C, DITTMAR A, MOUKHINA E, et al. Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species[J]. Journal of Crystal Growth, 2012, 360(1):185-188.
[15] CARLONE C, LAKIN K M, SHANKS H R. Optical phonons of aluminum nitride[J]. Journal of Applied Physics, 1984,55(11):4010-4014.
[16] BICKERMANN M, EPELLBAUM B M, HEIMANN P, et al.Orientation-dependent phonon observation in single-crystalline aluminum nitride[J]. Applied Physics Letters, 2005, 86(13):131904-131904-3.
[17] LIUL,EDGARJH,RAJASINGAMS,etal.Raman characterization and stress analysis of AlN grown on SiC by sublimation[J]. Journal of Applied Physics, 2002, 92(9):5183-5188.
[18] GALLINAT C S, KOBLMULLER G, WU F, et al. Evaluation of threading dislocation densities in In-and N-face InN[J].Journal of Applied Physics, 2010, 107(5):600.
[19] HE Y B, WU X H, KELLER S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films[J]. Applied Physics Letters, 1996, 65(5):643-645.
[20] HAM R K, Sharpe N G. A systematic error in the determination of dislocation densities in thin films[J]. Philosophical Magazine, 1961, 6(69):1193-1194.
[21]郝跃,张金凤,张进成,等.氮化物宽禁带半导体材料与电子器件[M].北京:科学出版社, 2013.
[22]王党会. III族氮化物半导体外延层薄膜的生长表征研究[D].西安:西安电子科技大学博士论文, 2012.
[23] KUBALL M. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control[J]. Surface&Interface Analysis, 2001, 31(10):987-999.
[24] ROMANOV A E, BELTZ G E, SPECK J S. Crack formation in surface layers with strain gradients[J]. International Journal of Materials Research, 2007, 98(8):723-728.
[2] LOCHNER Z, KAO T T, LIU Y S, et al. Deep-ultraviolet Lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on Al N Substrate[J]. Applied Physics Letters, 2013, 102(10):15.
[3] KUMAR V, LU W, KHAN F A, et al. High performance0.25μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm[J]. Electronics Letters,2002, 38(5):252-253.
[4] KNEISSL M, BOUR D P, ROMANO L, et al. Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates[J].Applied Physics Letters, 2000, 77(13):1931-1933.
[5]杜家熙,苏建修,王占合,等.硬脆晶体基片化学机械抛光材料去除非均匀性形成机制研究[J].人工晶体学报, 2012, 41(4):1130-1137.DU J X, SU J X, WANG Z H, et al. Journal of Synthetic Crystals,2012, 41(4):1130-1137.
[6]李永安. GaN衬底材料相关技术研究[D].南京:南京大学硕士论文, 2015.
[7] DAVYDOV V Y, GONCHARUK I N, SMIRNOV A N, et al.Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys[J]. Physical Review B, 2002, 65(12):125203.
[8]赵有文,董志远,魏学成,等.升华法生长AlN体单晶初探[J].半导体学报, 2006,(7):1241-1245.ZHAOYW,DONGZY,WEIXC,etal.Journalof Semiconductors, 2006,(7):1241-1245.
[9] JADWISIENCZAK W M, LOZYKOWSKI H J, BERISHEV I,et al. Visible emission from AlN doped with Eu and Tb ions[J].Journal of Applied Physics, 2001, 89(8):4384-4390.
[10] YANG Y, ZHAO Q, ZHANG X Z, et al. Mn-doped AlN nanowires with room temperature ferromagnetic ordering[J].Applied Physics Letters, 2007, 90(9):092118-092118-3.
[11] SLACK G A, SCHWALTER L J, MORELLI D, et al. Some effects of oxygen impurities on AlN and GaN[J]. Journal of Crystal Growth, 2002, 246(3):287-298.
[12] MATTILA T, NIEMINEN R M. Ab initio study of oxygen point defects in GaAs, GaN and AlN[J]. Physical Review B,1996, 54(23):16676.
[13] SAKAI T, IWATA M. Effect of oxygen on sintering of AlN[J].Journal of Materials Science, 1977, 12(8):1659-1665.
[14] GUGUSCHEY C, DITTMAR A, MOUKHINA E, et al. Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species[J]. Journal of Crystal Growth, 2012, 360(1):185-188.
[15] CARLONE C, LAKIN K M, SHANKS H R. Optical phonons of aluminum nitride[J]. Journal of Applied Physics, 1984,55(11):4010-4014.
[16] BICKERMANN M, EPELLBAUM B M, HEIMANN P, et al.Orientation-dependent phonon observation in single-crystalline aluminum nitride[J]. Applied Physics Letters, 2005, 86(13):131904-131904-3.
[17] LIUL,EDGARJH,RAJASINGAMS,etal.Raman characterization and stress analysis of AlN grown on SiC by sublimation[J]. Journal of Applied Physics, 2002, 92(9):5183-5188.
[18] GALLINAT C S, KOBLMULLER G, WU F, et al. Evaluation of threading dislocation densities in In-and N-face InN[J].Journal of Applied Physics, 2010, 107(5):600.
[19] HE Y B, WU X H, KELLER S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films[J]. Applied Physics Letters, 1996, 65(5):643-645.
[20] HAM R K, Sharpe N G. A systematic error in the determination of dislocation densities in thin films[J]. Philosophical Magazine, 1961, 6(69):1193-1194.
[21]郝跃,张金凤,张进成,等.氮化物宽禁带半导体材料与电子器件[M].北京:科学出版社, 2013.
[22]王党会. III族氮化物半导体外延层薄膜的生长表征研究[D].西安:西安电子科技大学博士论文, 2012.
[23] KUBALL M. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control[J]. Surface&Interface Analysis, 2001, 31(10):987-999.
[24] ROMANOV A E, BELTZ G E, SPECK J S. Crack formation in surface layers with strain gradients[J]. International Journal of Materials Research, 2007, 98(8):723-728.