基于ZnO纳米线/PMMA复合材料的柔性阻变式随机存储器
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摘要
基于ZnO纳米线/有机PMMA复合材料体系制备了柔性阻变式随机存储器,由于复合材料体系的低杨氏模量及高柔性特点,该器件展示了超高的机械耐受性.器件在大角度下弯折104次以上而未见性能退化,且数据保持性良好.器件的阻变存储机制可归因于导电细丝的形成与断裂,其中ZnO纳米线表面上的缺陷在导电细丝构建中起重要作用.
A flexible resistive random access memory device was prepared based on ZnO nanowire/PMMA composite.Because of the low Young modulus and high flexibility,the flexible device presented superior mechanical endurance.The device could be reliably operated without any degradation after bending the device up to 104 cycles,and the stored information had good data retention.The resistive switching mechanism was attributed to the formation and rupture of conductive filaments,where the defects on the surface of ZnO nanowires played an important role.
A flexible resistive random access memory device was prepared based on ZnO nanowire/PMMA composite.Because of the low Young modulus and high flexibility,the flexible device presented superior mechanical endurance.The device could be reliably operated without any degradation after bending the device up to 104 cycles,and the stored information had good data retention.The resistive switching mechanism was attributed to the formation and rupture of conductive filaments,where the defects on the surface of ZnO nanowires played an important role.
引文
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[2]Wang Z Q,Xu H Y,Zhang L,et al.Performance impovement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters[J].Nanoscale,2013,5(10):4490-4494.
[3]Zhang L,Xu H Y,Wang Z Q,et al.Oxygen-concentration effect on p-type CuAlOxresistive switching behaviors and the nature of conducting filaments[J].Appl.Phys.Lett.,2014,104(9):093512.
[4]Lin Y,Xu H Y,Wang Z Q,et al.Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4nanoparticles[J].Appl.Phys.Lett.,2017,110(19):193503-1-5.
[5]Zhu J X,Zhou W L,Wang Z Q,et al.Flexible,transferable and conformal egg albumen based resistive switching memory devices[J].RSC Adv.,2017,7(51):32114-32119.
[6]Lee S,Kim W,Yong K.Overcoming the water vulnerability of electronic devices:a highly waterresistant ZnO nanodevice with multifunctionality[J].Adv.Mater.,2011,23(38):4336-1-5.
[7]赵凯东.ZnO基纳米结构阻变式随机存储器[D].长春:东北师范大学,2013.
[8]Chang W Y,Lin C A,He J H,et al.Resistive switching behaviors of ZnO nanorod layers[J].Appl.Phys.Lett.,2010,96(24):242109.
[9]王广胜,邓元,贾艳春,等.氧化锌纳米线束合成及发光性质的研究[J].稀有金属材料与工程,2007,36(s2):227-229.
[10]Wang Z Q,Xu H T,Li X H,et al.Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance[J].IEEE Electron Device Lett.,2011,32(10):1442-1444.
[11]Guo T,Sun B,Mao S S,et al.A resistance ratio change phenomenon observed in Al doped ZnO(AZO)/Cu(In1-xGax-)Se2/Mo resistive switching memory device[J].Appl.Surf.Sci.,2018,433:535-539.
[12]Chang W Y,Lai Y C,Wu T B,et al.Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications[J].Appl.Phys.Lett.,2008,92(2):022110-1-3.
[13]Wang X T,Qian H L,Guan L,et al.Influence of metal electrode on the performance of ZnO based resistance switching memories[J].J.Appl.Phys.,2017,122(15):154301.
[14]黄玉茜,程轲,刘婧婧,等.表面态和线间距对ZnO纳米线/聚(3-己基噻吩)复合纳米结构光伏性能的影响[J].科学通报,2016,61(13):1495.
[15]Ju S,Kim S,Mohammadi S,et al.Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements[J].Appl.Phys.Lett.,2008,92(2):022104-1-3.
[16]Tam K H,Cheung C K,Leung Y H,et al.Defects in ZnO nanorods prepared by a hydrothermal method[J].J.Phys.Chem.B,2006,110(42):20865-20871.
[17]Misra P,Das A K,Kukreja L M,et al.Switching characteristics of ZnO based transparent resistive random acess memory devices grown by pulsed laser deposition[J].Phys.Status Solidi C,2010,7(6):1718-1720.
[18]Zhao L,Zhang J Y,He Y,et al.Dynamic modeling and atomistic simulations of SET and RESET operations in TiO2-based unipolar resistive memory[J].IEEE Electron Device Lett.,2011,32(5):677-679.
[19]Jim H J,Yoon K Y,Park T H,et al.Filament shape dependent reset behavior governed by the interplay between the electric field and thermal effects in the Pt/TiO2/Cu electrochemical metallization device[J].Adv.Mater.,2017,3(2):4336-1-5.