ZnO纳米线表面改性及其光学性质
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摘要
利用Ar~+等离子体处理ZnO纳米线,通过对不同处理时间后的样品进行变温光谱测试,分析了处理前后ZnO发光性质的变化。结果表明:随着处理时间的增加,其室温带边发光强度先增加后减小,处理90 s时是原生样品的2.45倍,位于可见区的缺陷发光得到了抑制。通过10 K下发光谱的对比,分析了等离子体作用的机理。当处理时间较短时,Ar~+等离子体可以有效除去ZnO纳米线表面的杂质和缺陷,提高其紫外发光强度;而处理时间较长时,将引入更多的深施主态缺陷,破坏其晶体结构,从而降低其发光性能。
The ZnO nanowires are treated by the Ar~+ plasma and the changes of luminescence properties before and after treatments are analyzed by the test of temperature-dependent spectra under different treatment time. The results show that the near band edge emission intensity at room temperature increases first and then decreases with the increase of treatment time. As for the treatment time of 90 s, the intensity is 2.45 times that of the as-grown sample and simultaneously the defect-related photo-luminescence in visible region is suppressed. The mechanism of plasma treatment is analyzed by the comparison among luminescence spectra at 10 K. When the treatment time is short, the impurities and defects on the ZnO nanowire surfaces can be effectively removed by the Ar~+ plasma and thus ultraviolet luminescence intensity is enhanced. When the treatment time is relatively long, the crystal structure is broken due to the introduction of more deep donor-state defects and thus the luminescence property is reduced.
The ZnO nanowires are treated by the Ar~+ plasma and the changes of luminescence properties before and after treatments are analyzed by the test of temperature-dependent spectra under different treatment time. The results show that the near band edge emission intensity at room temperature increases first and then decreases with the increase of treatment time. As for the treatment time of 90 s, the intensity is 2.45 times that of the as-grown sample and simultaneously the defect-related photo-luminescence in visible region is suppressed. The mechanism of plasma treatment is analyzed by the comparison among luminescence spectra at 10 K. When the treatment time is short, the impurities and defects on the ZnO nanowire surfaces can be effectively removed by the Ar~+ plasma and thus ultraviolet luminescence intensity is enhanced. When the treatment time is relatively long, the crystal structure is broken due to the introduction of more deep donor-state defects and thus the luminescence property is reduced.
引文
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[18] Farid S, Mukherjee S, Sarkar K, et al. Enhanced optical properties due to indium incorporation in zinc oxide nanowires[J]. Applied Physics Letters, 2016, 108(2): 021106.
[19] Chirakkara S, Choudhury P R, Nanda K K, et al. Understanding Pt-ZnO: In Schottky nanocontacts by conductive atomic force microscopy[J]. Materials Research Express, 2016, 3(4): 045023.
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[21] Rodrigues J, Holz T, Allah R F, et al. Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods[J]. Scientific Reports, 2015, 5: 10783.
[22] Yao Z, Gu S, Tang K, et al. Zinc vacancy related emission in homoepitaxial N-doped ZnO microrods[J]. Journal of Luminescence, 2015, 161: 293-299.
[23] Sun L J, Zhong S, Zhang W Y, et al. Electrical and optical properties of Ag doped p-type ZnO films and its homojunctions properties[J]. Chinese Journal of Luminescence, 2008, 29(2): 304-308. 孙利杰, 钟声, 张伟英, 等. Ag掺杂p型ZnO薄膜及其同质结的光电性质[J]. 发光学报, 2008, 29(2): 304-308.
[2] Nasiri N, Bo R, Wang F, et al. Ultraporous electron-depleted ZnO nanoparticle networks for highly sensitive portable visible-blind UV photodetectors[J]. Advanced Materials, 2015, 27(29): 4336-4343.
[3] Li R X, Wei Z P, Zhao F H, et al. Investigation of localized and delocalized excitons in ZnO/ZnS core-shell heterostructured nanowires[J]. Nanophotonics, 2017, 6(5): 1093-1100.
[4] Zeng Y, Zhao Y, Jiang Y J. Effect of excimer laser irradiation for ZnO thin films under different atmospheres[J]. Chinese Journal of Lasers, 2014, 41(2): 0207001. 曾勇, 赵艳, 蒋毅坚. 不同气氛下ZnO薄膜的准分子激光辐照效应[J]. 中国激光, 2014, 41(2): 0207001.
[5] Liu C L, Dou Y, Chen C, et al. Performance of oxygen passivation silicon-based ZnO/Nanoporous Si pillar array heterojunction near white light LED[J]. Laser & Optoelectronics Progress, 2016, 53(11): 112302. 刘春玲, 窦宇, 陈琛, 等. 氧钝化硅基ZnO/纳米多孔硅柱状阵列异质结近白光LED的性能[J]. 激光与光电子学进展, 2016, 53(11): 112302
[6] Wang R, Cheng C. Performances enhancement of H-doped ZnO nanorods by H2/Ar plasma treatment[J]. Plasma Processes and Polymers, 2014, 12(1): 51-58.
[7] Hsu C L, Chang S J. Doped ZnO 1D nanostructures: Synthesis, properties, and photodetector application[J]. Small, 2014, 10(22): 4562-4585.
[8] Chen R, Ye Q L, He T C, et al. Exciton localization and optical properties improvement in nanocrystal-embedded ZnO core-shell nanowires[J]. Nano Letters, 2013, 13(2): 734-739.
[9] Sarkar K, Mukherjee S, Wiederrecht G, et al. Ultrafast carrier dynamics and optical pumping of lasing from Ar-plasma treated ZnO nanoribbons[J]. Nanotechnology, 2018, 29(9): 095701.
[10] Yoo J, Yi G C, Chon B, et al. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires[J]. Journal of Luminescence, 2016, 176: 278-282.
[11] Liu W Z, Xu H Y, Wang C L,et al. Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration[J]. Nanoscale, 2013, 5(18): 8634-8639.
[12] Lu J F, Li J T, Xu C X, et al. Direct resonant coupling of Al surface plasmon for ultraviolet photoluminescence enhancement of ZnO microrods[J]. ACS Applied Materials & Interfaces, 2014, 6(20): 18301-18305.
[13] Baratto C, Comini E, Ferroni M, et al. Plasma-induced enhancement of UV photoluminescence in ZnO nanowires[J]. CrystEngComm, 2013, 15(39): 7981-7986.
[14] Liu X M, Fang D, Gu L B, et al. Study on surface characteristics of GaSb materials after plasma nitrogen passivation[J]. Chinese Journal of Lasers, 2018, 45(1): 0103001. 刘晓敏, 房丹, 谷李斌, 等. 等离子体氮钝化GaSb材料表面特性研究[J]. 中国激光, 2018, 45(1): 0103001.
[15] Ra H W, Khan R, Kim J T, et al. Effects of surface modification of the individual ZnO nanowire with oxygen plasma treatment[J]. Materials Letters, 2009, 63(28): 2516-2519.
[16] Jiang S, Ren Z H, Gong S Y, et al. Tunable photoluminescence properties of well-aligned ZnO nanorod array by oxygen plasma post-treatment[J]. Applied Surface Science, 2014, 289: 252-256.
[17] Chen C, Lu Y F, He H P, et al. Violet emission in ZnO nanorods treated with high-energy hydrogen plasma[J]. ACS Applied Materials & Interfaces, 2013, 5(20): 10274-10279.
[18] Farid S, Mukherjee S, Sarkar K, et al. Enhanced optical properties due to indium incorporation in zinc oxide nanowires[J]. Applied Physics Letters, 2016, 108(2): 021106.
[19] Chirakkara S, Choudhury P R, Nanda K K, et al. Understanding Pt-ZnO: In Schottky nanocontacts by conductive atomic force microscopy[J]. Materials Research Express, 2016, 3(4): 045023.
[20] Lin C C, Chen H P, Liao H C, et al. Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates[J]. Applied Physics Letters, 2005, 86(18): 183103.
[21] Rodrigues J, Holz T, Allah R F, et al. Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods[J]. Scientific Reports, 2015, 5: 10783.
[22] Yao Z, Gu S, Tang K, et al. Zinc vacancy related emission in homoepitaxial N-doped ZnO microrods[J]. Journal of Luminescence, 2015, 161: 293-299.
[23] Sun L J, Zhong S, Zhang W Y, et al. Electrical and optical properties of Ag doped p-type ZnO films and its homojunctions properties[J]. Chinese Journal of Luminescence, 2008, 29(2): 304-308. 孙利杰, 钟声, 张伟英, 等. Ag掺杂p型ZnO薄膜及其同质结的光电性质[J]. 发光学报, 2008, 29(2): 304-308.