化学浴沉积法制备ZnO纳米线的形貌分析
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  • 英文篇名:ZnO nanowires prepared by chemical bath deposition method
  • 作者:杨文婷 ; 莫观孔 ; 黄瀛 ; 何欢 ; 符跃春 ; 唐子媚 ; 刘宇伦 ; 鲁姣 ; 赵琦 ; 沈晓明
  • 英文作者:YANG Wen-ting;MO Guan-kong;HUANG Ying;HE Huan;FU Yue-chun;TANG Zi-mei;LIU Yu-lun;LU Jiao;ZHAO Qi;SHEN Xiao-ming;The Facility Engineering Department,Guangxi Polytechnic of Construction;School of Resources,Environment and Materials,Guangxi University;
  • 关键词:ZnO纳米线 ; 化学浴法(CBD) ; 长径比 ; 种子层
  • 英文关键词:ZnO nanowires;;chemical bath deposition(CBD);;length-diameter ratio;;seed layer
  • 中文刊名:GXKZ
  • 英文刊名:Journal of Guangxi University(Natural Science Edition)
  • 机构:广西建设职业技术学院设备工程系;广西大学资源环境与材料学院;
  • 出版日期:2018-12-25
  • 出版单位:广西大学学报(自然科学版)
  • 年:2018
  • 期:v.43;No.166
  • 基金:国家自然科学基金资助项目(61474030);; 广西教育科学“十三五”规划课题(2017A038);; 中国科学院重点实验室开放基金资助项目(15ZS06);; 广西科技攻关计划项目(1598008-15);; 南宁市科技攻关计划项目(20151268)
  • 语种:中文;
  • 页:GXKZ201806044
  • 页数:7
  • CN:06
  • ISSN:45-1071/N
  • 分类号:369-375
摘要
为了制备垂直排列长径比高的ZnO纳米线,首先采用脉冲激光沉积法(PLD)在不同温度的掺锡氧化铟(ITO)透明导电玻璃衬底上制备一层ZnO种子层,然后用化学浴沉积法(CBD)在已制备了种子层的衬底上生长ZnO纳米线,同时系统地研究了不同生长条件对ZnO纳米线生长行为的影响,并使用扫描电子显微镜和原子力显微镜对其形貌、生长特征等进行了测试和表征。结果表明,在衬底温度为200℃的ITO衬底上沉积的ZnO种子层具有良好的结晶性。当生长时间为9 h,水浴温度为95℃,聚乙烯亚胺(PEI)浓度为4. 5 mmol/L时,通过CBD法生长的ZnO纳米线呈六角形状垂直排列于具有种子层的ITO基片上,长径比高达20. 56。
        In order to prepare vertically aligned ZnO nanowires with high aspect ratio,ZnO seed layers were deposited on ITO transparent conductive glass substrate with different temperature,which were used to synthesize the ZnO nanowires by chemical bath deposition(CBD) method. The synthesized condition were systematically investigated. The morphology and growth behavior of Zn O seed layers and nanowires were characterized by scanning electron microscopy and atomic force microscopy. The results show that ZnO seed layer deposited on ITO substrate with 200 ℃,exhibited excellent crystallinity. Furthermore, on the above mentioned substrate, and the water bath temperature was fixed at 95 ℃,the Polyethylenimine(PEI) were carried out at 4. 5 mmol/L and thegrowth time was 9 h,the obtained ZnO nanowires were vertically grown on ITO substrate with a hexagonal configuration and presented a well array with a high aspect ratio of 20. 56.
引文
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