水热法制备条件对ZnO纳米线形貌影响
|
摘要
为了获得最佳的ZnO纳米线制备条件,本文通过实验研究了水热法制备ZnO纳米线实验中反应物浓度及反应时间对ZnO纳米线形貌的影响。先采用sol-gel法在硅基底上进行ZnO籽晶层的制备,再采用水热法在籽晶层上进行了ZnO纳米线的生长,并通过扫描电子显微镜(SEM)进行了形貌表征。实验研究表明,当浓度为0. 05 mol·L~(-1),加热时间5 h,加热温度为160℃时,纳米线阵列取向性一致,形貌较好。
In order to obtain the best preparation conditions of ZnO nanowires,the effects of reaction concentration and reaction time on the morphology of ZnO nanowires were studied experimentally. Firstly,ZnO seed layer was prepared on silicon substrate by sol-gel method,and then ZnO nanowires were grown on the seed layer by hydrothermal method. The morphology of ZnO nanowires was characterized by scanning electron microscopy( SEM). The experimental results show that the nanowire arrays have the same orientation and good morphology when the concentration is 0. 05 mol·L~(-1),the heating time is 5 h and the heating temperature is 160℃.
In order to obtain the best preparation conditions of ZnO nanowires,the effects of reaction concentration and reaction time on the morphology of ZnO nanowires were studied experimentally. Firstly,ZnO seed layer was prepared on silicon substrate by sol-gel method,and then ZnO nanowires were grown on the seed layer by hydrothermal method. The morphology of ZnO nanowires was characterized by scanning electron microscopy( SEM). The experimental results show that the nanowire arrays have the same orientation and good morphology when the concentration is 0. 05 mol·L~(-1),the heating time is 5 h and the heating temperature is 160℃.
引文
[1]商世广,王箫扬,赵萍,等. Zn O纳米线阵列的可控生长及机理分析[J].西安邮电大学学报,2015(3):105-108.
[2]张雯,张庆腾,贺永宁. Zn O纳米线膜的可控生长及其量子限域效应研究[J].西安交通大学学报,2010(4):82-86.
[3]Hua G,Tian Y,Yin L,et al. Reproducible growth of ultralong Zn O nanowire arrays in the metastable supersaturated solution[J]. Crystal Growth&Design,2009(11):4653-4659.
[4]Kim K H,Jin Z,Abe Y,et al. A comparative study on the structural properties of Zn O and Ni-doped Zn O nanostructures[J].Materials Letters,2015(149):8-11.
[5]朱长纯,史永胜.场致发射显示器的现状与发展[J].真空电子技术,2002(5):15-17.
[6]Ahsanulhaq Q,Kim J H,Hahn Y B. Controlled selective growth of Zn O nanorod arrays and their field emission properties[J].Nanotechnology,2007(48):485307.
[7]何林,刘敏霞,张耿,等.籽晶层热处理温度对Zn O纳米棒阵列性能的影响[J].半导体光电,2013(6):998-1001.
[8]Grasset F,Lavastre O,Baudet C,et al. Synthesis of alcoholic Zn O nanocolloids in the presence of piperidine organic base:Nucleation-growth evidence of Zn5(OH)8Ac2·2H2O fine particles and Zn O nanocrystals[J]. Journal of Colloid&Interface Science,2008(2):493-500.
[9]Briois V,Giorgetti C,Baudelet F,et al. Dynamical study of Zn O nanocrystal and Zn-HDS layered basic zinc acetate formation from sol-gel route[J]. J Phys Chem C,2007(8):3253-3258.
[10]肖扬.氧化锌薄膜材料研究[J].山东工业技术,2015(13):197.
[11]米刚.液固相水热反应合成氧化硅纳米线的研究[D].上海:复旦大学,2008.
[12]蒋雪梅.有序半导体纳米线阵列的制备及其性能研究[D].广州:广东工业大学,2013.
[2]张雯,张庆腾,贺永宁. Zn O纳米线膜的可控生长及其量子限域效应研究[J].西安交通大学学报,2010(4):82-86.
[3]Hua G,Tian Y,Yin L,et al. Reproducible growth of ultralong Zn O nanowire arrays in the metastable supersaturated solution[J]. Crystal Growth&Design,2009(11):4653-4659.
[4]Kim K H,Jin Z,Abe Y,et al. A comparative study on the structural properties of Zn O and Ni-doped Zn O nanostructures[J].Materials Letters,2015(149):8-11.
[5]朱长纯,史永胜.场致发射显示器的现状与发展[J].真空电子技术,2002(5):15-17.
[6]Ahsanulhaq Q,Kim J H,Hahn Y B. Controlled selective growth of Zn O nanorod arrays and their field emission properties[J].Nanotechnology,2007(48):485307.
[7]何林,刘敏霞,张耿,等.籽晶层热处理温度对Zn O纳米棒阵列性能的影响[J].半导体光电,2013(6):998-1001.
[8]Grasset F,Lavastre O,Baudet C,et al. Synthesis of alcoholic Zn O nanocolloids in the presence of piperidine organic base:Nucleation-growth evidence of Zn5(OH)8Ac2·2H2O fine particles and Zn O nanocrystals[J]. Journal of Colloid&Interface Science,2008(2):493-500.
[9]Briois V,Giorgetti C,Baudelet F,et al. Dynamical study of Zn O nanocrystal and Zn-HDS layered basic zinc acetate formation from sol-gel route[J]. J Phys Chem C,2007(8):3253-3258.
[10]肖扬.氧化锌薄膜材料研究[J].山东工业技术,2015(13):197.
[11]米刚.液固相水热反应合成氧化硅纳米线的研究[D].上海:复旦大学,2008.
[12]蒋雪梅.有序半导体纳米线阵列的制备及其性能研究[D].广州:广东工业大学,2013.