硫化反应生长ZnS薄膜的结构和光学性能研究
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摘要
以物理气相沉积中的溅射和蒸发方法,在玻璃衬底上沉积Zn/S/Zn三层膜结构,然后在1atm压力的Ar气氛中退火制备ZnS薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见透射光谱对ZnS薄膜的晶体结构和光学性质及其生长机理进行研究。结果表明,在450℃温度下退火时,三层膜结构中高活性Zn和S容易发生硫化反应,形成的ZnS薄膜为立方晶体结构,沿(111)晶面择优生长;其ZnS特征吸收边出现在350nm附近,在可见光波长范围内,ZnS薄膜具有约80%的透光率;在450℃温度下退火后再于550℃温度下退火,所制ZnS薄膜的结晶性得到进一步提高。
Zn/S/Zn three layers of membrane structure were deposited on glass substrates by sputtering and evaporation methods in physical vapor deposition,and then ZnS thin films were prepared by annealing under Ar atmosphere at 1atm pressure.The crystal structure,optical properties and growth mechanism of ZnS thin film were investigated by using X-ray diffractometer(XRD),scanning electron microscope(SEM)and UV-vis transmission spectra.The results show that when annealing at450 ℃,the vulcanization reaction of highly reactive Zn and S in three layers of membrane structure is easy to occur and cubic crystal structure of ZnS thin film grows preferentially along the(111)crystal plane direction.The characteristic light absorption edge of ZnS occurs at approximately 350 nm.Within the visible wavelength range,the ZnS thin film has around 80% of the specular transmittance.By annealing at 450 ℃ and then annealing at 550 ℃,the crystallinity of ZnS thin film is further improved.
Zn/S/Zn three layers of membrane structure were deposited on glass substrates by sputtering and evaporation methods in physical vapor deposition,and then ZnS thin films were prepared by annealing under Ar atmosphere at 1atm pressure.The crystal structure,optical properties and growth mechanism of ZnS thin film were investigated by using X-ray diffractometer(XRD),scanning electron microscope(SEM)and UV-vis transmission spectra.The results show that when annealing at450 ℃,the vulcanization reaction of highly reactive Zn and S in three layers of membrane structure is easy to occur and cubic crystal structure of ZnS thin film grows preferentially along the(111)crystal plane direction.The characteristic light absorption edge of ZnS occurs at approximately 350 nm.Within the visible wavelength range,the ZnS thin film has around 80% of the specular transmittance.By annealing at 450 ℃ and then annealing at 550 ℃,the crystallinity of ZnS thin film is further improved.
引文
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[5]Zhang W,Zeng X H,Lu J F,et al.Phase controlled synthesis and optical properties of ZnS thin films by pulsed laser deposition[J].Materials Research Bulletin,2013,48:3843-3846.
[6]Liu T Z,Ke H,Zhang H,et al.Effect of four different zinc salts and annealing treatment on growth,structural,mechanical and optical properties of nanocrystalline ZnS thin films by chemical bath deposition[J].Materials Science in Semiconductor Processing,2014,26:301-311.
[7]Zhang R G,Wang B Y,Wei L,et al.Growth and properties of ZnS thin films by sulfidation of sputter deposited Zn[J].Vacuum,2012,86:1210-1214.
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