阳极氧化Ta_2O_5薄膜电容制作工艺研究
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摘要
本文采用厚光刻胶作为阳极氧化掩膜对磁控溅射Ta薄膜进行阳极氧化,阳极氧化电压可达到200VDC,增加了介质层的厚度从而提高薄膜电容的击穿电压。并根据测试结果计算了阳极氧化Ta_2O_5薄膜的厚度和阳极氧化电压之间的关系、阳极氧化Ta_2O_5薄膜的介电常数,为电路设计者提供依据。
Sputtered Ta thin film was anodized using thick photoresist as mask, the applied DC anodizing voltage can be as high as 200 V, this increases the thickness of the dielectric layer, leading to a higher breakdown voltage of the thin film capacitor. The relationship between thickness of Ta_2O_5 thin film and applied anodizing voltage was calculated, also was the dielectric constant of Ta_2O_5 thin film, which can help engineers in circuits design.
引文
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    [2]余为国等.氮化硅薄膜MIM电容器的制备与性能研究.电子元件与材料.2010,29(5):45-47
    [3]刘卓佳,姜贵云,等.高比容低损耗Ta2O5薄膜电容的试制.第十八界全国混合集成电路学术会议论文集,2013:114-118

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