流化床-化学气相沉积(FB-CVD)法制备细晶SiC包覆层
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摘要
SiC包覆层是高温气冷堆核燃料元件TRISO包覆颗粒最关键的一层。制备细晶SiC包覆层对阻挡裂变产物释放、提高SiC包覆层承压能力等具有重要意义。本文通过流化床-化学气相沉积方法,在1 550℃条件下,在MTS裂解气体过程中引入脉冲丙烯气体,研究丙烯掺杂对SiC晶粒生长过程的影响。材料表征分析表明通过引入脉冲丙烯气体可以成功制备细晶SiC包覆层,实验研究给出了最佳的丙烯、氢气、氩气、MTS载带气配比,并结合晶体生长机理,给出了细晶制备的过程分析。
Silicon carbide is the key coating in TRISO particles,which are the main safety aspect in high temperature gas cooled reactor.SiC with fine grains shows great advantage to block harmful fission products and enhance the mechanical properties of the TRISO particles.In this study,pulse propylene was introduced to the fluidized bed-chemical vapor deposition system.Results showed SiC coating with fine grains was obtained by adding pulse propylene.The microstructures of the SiC coating layers with different propylene concentrations were investigated.Optimized experimental conditions were obtained by controlling the concentrations of propylene,H_2,Ar and MTS carrier gas.Possible formation mechanism of the fine grains was discussed.
引文
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