对极鳍线结构的Q波段固态功率放大器设计
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- 英文论文题名：Design of a Solid-state Power Amplifier by Using Antipodal Finline-to-microstrip Transition in Q-band
- 论文作者：葛伟 ; 盛胜君
- 英文论文作者：GE Wei ; SHENG Sheng-jun ; No.36 Research Institute of CETC
- 年：2016
- 作者机构：中国电子科技集团公司第三十六研究所;
- 论文关键词：功率放大器 ; 金丝键合 ; 对极鳍线
- 英文论文关键词：power amplifier ; gold bonding wire ; antipodal finline-to-microstrip
- 会议召开时间：2016-08-17
- 会议录名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议论文集
- 语种：中文
- 分类号：TN722.75
- 学会代码：WBXB
- 会议名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议
- 会议地点：中国陕西西安
- 主办单位：中国电子学会微波分会、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：3
- 文件大小：750k
- 原文格式：D
- 会议级别：全国
摘要
本文介绍了一款频段44GHz~46GHz,采用对极鳍线微带过渡结构的功率放大器设计方法。本文对对极鳍线微带过渡结构进行模拟仿真并测试背靠背结构的插入损耗,其插入损耗在44GHz~46GHz频段内小于2d B。电路设计中采用金丝键合工艺连接裸片与微带电路,并用HFSS对其进行仿真。选用2W裸片进行装配,测试结果表明在44GHz~46GHz频段内,饱和功率输出1.3W以上,增益大于13d B,效率在8%以上。以此模块为基本单元电路,利用功率合成技术完成Q波段高功率放大器单机的设计。
An design of a solid-state power amplifier in 44GHz~46GHz by using antipodal finline-to-microstrip transition was presented. A low back-to-back insertion loss of less than 2d B at the range of 44GHz~46GHz frequency was obtained from the transition structure. The design used gold boding wire connecting the die to the microstrip and the structure was simulated by HFSS.A 2 Watt level die was selected for the amplifier module. The test result shows that Psat of 1.3watt and gain of 13 d B in the frequency range of 44GHz~46GHz.It can be used as amplifier cell to consists high power amplifier in Q-band.
An design of a solid-state power amplifier in 44GHz~46GHz by using antipodal finline-to-microstrip transition was presented. A low back-to-back insertion loss of less than 2d B at the range of 44GHz~46GHz frequency was obtained from the transition structure. The design used gold boding wire connecting the die to the microstrip and the structure was simulated by HFSS.A 2 Watt level die was selected for the amplifier module. The test result shows that Psat of 1.3watt and gain of 13 d B in the frequency range of 44GHz~46GHz.It can be used as amplifier cell to consists high power amplifier in Q-band.
引文
[1]Suehiro-Cho,Ome-Shi.Electrical Properties of Gold bonding wire[R].Tokyo:Sumitomo Metal Company Limited.2011.
[2]Campbell Charles F,Poulton Matthew.Compact Highly Integrated X-band Power amplifier Using Commercially Available Discrete Ga N FETs[C].Australia Asia-pacific Microwave conference Proceedings2011;243-246.
[3]王小伟,李家胤,周翼鸿;一种Ka波段波导微带鳍线转换结构.[J]空间电子技术,2009.
[2]Campbell Charles F,Poulton Matthew.Compact Highly Integrated X-band Power amplifier Using Commercially Available Discrete Ga N FETs[C].Australia Asia-pacific Microwave conference Proceedings2011;243-246.
[3]王小伟,李家胤,周翼鸿;一种Ka波段波导微带鳍线转换结构.[J]空间电子技术,2009.