微波宽带高效率GaN MMIC功率放大器设计
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- 英文论文题名：Microwave Broadband High Efficiency GaN MMIC Power Amplifier
- 论文作者：刘宪锁 ; 徐跃杭
- 英文论文作者：LIU Xian-suo ; XU Yue-hang ; College of Electronic Engineering ; University of Electronic Science and Technology of China
- 年：2016
- 作者机构：电子科技大学电子工程学院;
- 论文关键词：GaN MMIC ; 功率放大器 ; 宽带 ; 高效率
- 英文论文关键词：GaN MMIC ; power-amplifier ; wideband ; high-efficency
- 会议召开时间：2016-08-17
- 会议录名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议论文集
- 语种：中文
- 分类号：TN722.75
- 学会代码：WBXB
- 会议名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议
- 会议地点：中国陕西西安
- 主办单位：中国电子学会微波分会、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：3
- 文件大小：584k
- 原文格式：D
- 会议级别：全国
摘要
本文基于国产Si C衬底的0.25um GaN HEMT工艺,采用两级放大结构设计了一款2-6GHz的宽带高效率Ga N MMIC功率放大器。通过采用带通匹配结构,并综合利用电抗补偿技术,使得设计的该MMIC功率放大器在2-6GHz范围内,输出功率大于36d Bm,增益大于21d B,功率附加效率(PAE)大于41%,其中输入功率为15d Bm,Vgs1=-1.5V,Vgs2=-2V,Vds=28V。整体版图尺寸3.5×2.4mm。
Over the past decade, gallium nitride's(Ga N) inherent advantages for the design of high power amplifiers in RF and microwave have thoroughly been demonstrated With domestic and foreign Ga N technology matures and related products come out, Ga N showing good market prospects. A broadband high efficiency Ga N MMIC power amplifier worked at 2-6 GHz is presented in this paper, and demonstrated with domestic 0.25 um Ga N HEMT technology. This power amplifier is based on bandpass matching network by combination of reactance compensation technique, simulation results show that output power is larger than 36 d Bm, gain is greater than 21 d B, and power added efficiency(PAE) is over 41% at the bias point Vgs1=-1.5V, Vgs2=-2V, Vds=28V. the chip size is 3.5×2.4mm.
Over the past decade, gallium nitride's(Ga N) inherent advantages for the design of high power amplifiers in RF and microwave have thoroughly been demonstrated With domestic and foreign Ga N technology matures and related products come out, Ga N showing good market prospects. A broadband high efficiency Ga N MMIC power amplifier worked at 2-6 GHz is presented in this paper, and demonstrated with domestic 0.25 um Ga N HEMT technology. This power amplifier is based on bandpass matching network by combination of reactance compensation technique, simulation results show that output power is larger than 36 d Bm, gain is greater than 21 d B, and power added efficiency(PAE) is over 41% at the bias point Vgs1=-1.5V, Vgs2=-2V, Vds=28V. the chip size is 3.5×2.4mm.
引文
[1]侯晓翔,王磊.采用汇流条合成器的高效率MMIC功率放大器设计[J].微波学报,2014:165-168.HOU Xiaoxiang,WANG Lei.Using BUS-BARCombiner High Efficient MMIC Power Amplifier Design[J].Journal of Microwaves,2014:165-168.
[2]Chi Hsien Lin and Hong-Yeh Chang,Member IEEE,AHigh Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique,IEEEMicrowave and Wireless Components letters,Vol.20,No.9,September 2010,pp 507-509.
[3]Changsi Wang,Yuehang Xu,Xuming Yu,Chunjiang Ren,Zhensheng Wang,Haiyan Lu,Tangsheng Chen,Bin Zhang,Ruimin Xu,“An Electrothermal Model for Empirical Large-Signal Modeling of Al Ga N/Ga NHEMTs Including Self-Heating and Ambient Temperature Effects”.IEEE Trans.Microw.Theory Techn.,vol.62,no.12,pp.2878-2887,DEC.2014.
[4]Yu Xuming,Sun Huan,Xu Yuehang,C-band 60W Ga Npower amplifier MMIC designed with harmonic tuned approach,Electronics Letters,pp.219-220,FEB 2014.
[5]Triquint.TGA2597,2-6GHz Ga N Driver Amplifier.[Online].Available:http://www.tri-quint.com/products/p/TGA2597.
[6]ANALOG DEVICES.HMC1086F,25W Ga N Flange Mount MMIC Power Amplifier2-6GHz.[Online].Available:http://www.analog.com/en/products/amplifiers/rf-ampli fiers/power amplifiers/hmc1086f10.html#product-overview.
[2]Chi Hsien Lin and Hong-Yeh Chang,Member IEEE,AHigh Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique,IEEEMicrowave and Wireless Components letters,Vol.20,No.9,September 2010,pp 507-509.
[3]Changsi Wang,Yuehang Xu,Xuming Yu,Chunjiang Ren,Zhensheng Wang,Haiyan Lu,Tangsheng Chen,Bin Zhang,Ruimin Xu,“An Electrothermal Model for Empirical Large-Signal Modeling of Al Ga N/Ga NHEMTs Including Self-Heating and Ambient Temperature Effects”.IEEE Trans.Microw.Theory Techn.,vol.62,no.12,pp.2878-2887,DEC.2014.
[4]Yu Xuming,Sun Huan,Xu Yuehang,C-band 60W Ga Npower amplifier MMIC designed with harmonic tuned approach,Electronics Letters,pp.219-220,FEB 2014.
[5]Triquint.TGA2597,2-6GHz Ga N Driver Amplifier.[Online].Available:http://www.tri-quint.com/products/p/TGA2597.
[6]ANALOG DEVICES.HMC1086F,25W Ga N Flange Mount MMIC Power Amplifier2-6GHz.[Online].Available:http://www.analog.com/en/products/amplifiers/rf-ampli fiers/power amplifiers/hmc1086f10.html#product-overview.