摘要
本文基于国产Si C衬底的0.25um GaN HEMT工艺,采用两级放大结构设计了一款2-6GHz的宽带高效率Ga N MMIC功率放大器。通过采用带通匹配结构,并综合利用电抗补偿技术,使得设计的该MMIC功率放大器在2-6GHz范围内,输出功率大于36d Bm,增益大于21d B,功率附加效率(PAE)大于41%,其中输入功率为15d Bm,Vgs1=-1.5V,Vgs2=-2V,Vds=28V。整体版图尺寸3.5×2.4mm。
Over the past decade, gallium nitride's(Ga N) inherent advantages for the design of high power amplifiers in RF and microwave have thoroughly been demonstrated With domestic and foreign Ga N technology matures and related products come out, Ga N showing good market prospects. A broadband high efficiency Ga N MMIC power amplifier worked at 2-6 GHz is presented in this paper, and demonstrated with domestic 0.25 um Ga N HEMT technology. This power amplifier is based on bandpass matching network by combination of reactance compensation technique, simulation results show that output power is larger than 36 d Bm, gain is greater than 21 d B, and power added efficiency(PAE) is over 41% at the bias point Vgs1=-1.5V, Vgs2=-2V, Vds=28V. the chip size is 3.5×2.4mm.
引文
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