基于巴伦结构的谐波控制MMIC功率放大器的设计
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- 英文论文题名：Design of Harmonic Control MMIC Power Amplifier Based on Barron Structure
- 论文作者：龚琳媛 ; 肖玮 ; 延波 ; 徐跃杭
- 英文论文作者：Gong Linyuan ; Xiao Wei ; Yan Bo ; Xu Yuehang ; School of Electronic Engineering ; University of electronic science and technology of China
- 年：2017
- 作者机构：电子科技大学电子工程学院;
- 论文关键词：GaN ; MMIC ; 高效率功率放大器 ; 谐波控制技术 ; 巴伦结构
- 英文论文关键词：Ga N ; MMIC ; high efficiency power amplifier ; harmonic control technology ; balun construction
- 会议召开时间：2017-05-08
- 会议录名称：2017年全国微波毫米波会议论文集（中册）
- 英文会议录名称：Proceedings of 2017 National Conference on Microwave and Millimeter Waves(NCMMW2017)
- 语种：中文
- 分类号：TN722.75
- 学会代码：ZDWB
- 会议名称：2017年全国微波毫米波会议
- 会议地点：中国浙江杭州
- 主办单位：中国电子学会
- 学会名称：中国电子学会微波分会
- 页数：4
- 文件大小：1445k
- 原文格式：D
- 会议级别：全国
摘要
基于WIN公司0.25μm栅长的Ga N HEMT工艺,研制了一款C波段Ga N单片功率放大器。该电路采用两级放大,末级的输入输出匹配电路中采用了巴伦结构,有效地抑制了偶次谐波,实现了波形控制,提高了放大器的效率。仿真结果表明,在5.0-6.0GHz频带内,当输入功率为23d Bm时,输出功率Pout=40d Bm,增益Gain>15d B,功率附加效率PAE>39%。
Based on WIN's 0.25μm Ga N HEMT technology, a C-band Ga N MMIC power amplifier is developed. The MMIC is designed with two stages, in the final stage of the input and output matching circuit using the balun structure, which effectively suppresses the even harmonics, realizes the waveform control and improves the efficiency of the amplifier. The simulation results show that when the input power is 23 d Bm at the frequency in 5.0-6.0GHz range, the Pout is 40 d Bm, the Gain>15d B, and the power added efficiency(PAE) is greater than 39%.
Based on WIN's 0.25μm Ga N HEMT technology, a C-band Ga N MMIC power amplifier is developed. The MMIC is designed with two stages, in the final stage of the input and output matching circuit using the balun structure, which effectively suppresses the even harmonics, realizes the waveform control and improves the efficiency of the amplifier. The simulation results show that when the input power is 23 d Bm at the frequency in 5.0-6.0GHz range, the Pout is 40 d Bm, the Gain>15d B, and the power added efficiency(PAE) is greater than 39%.
引文
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[3]孙环,欧荣德,徐锐敏,等.C波段Ga N HEMT高效率功率放大器MMIC[C]//2015年全国微波毫米波会议论文集.2015.
[4]Yu X,Sun H,Xu Y,et al.C-band 60 W Ga N power amplifier MMIC designed with harmonic tuned approach[J].Electronics Letters,2015,52(3):219-221.
[5]Stameroff A N,Ta H H,Pham A V,et al.Wide-bandwidth power-combining and inverse class-F Ga N power amplifier at X-band[J].IEEE Transactions on Microwave Theory and Techniques,2013,61(3):1291-1300.
[2]Florian C,Cignani R,Santarelli A,et al.A 40watt C-band MMIC high power amplifier for space radar application exploiting a 0.25μm Al Ga N/Ga N on Si C process[C]//Microwave Symposium Digest(IMS),2013 IEEE MTT-S International.IEEE,2013:1-4.
[3]孙环,欧荣德,徐锐敏,等.C波段Ga N HEMT高效率功率放大器MMIC[C]//2015年全国微波毫米波会议论文集.2015.
[4]Yu X,Sun H,Xu Y,et al.C-band 60 W Ga N power amplifier MMIC designed with harmonic tuned approach[J].Electronics Letters,2015,52(3):219-221.
[5]Stameroff A N,Ta H H,Pham A V,et al.Wide-bandwidth power-combining and inverse class-F Ga N power amplifier at X-band[J].IEEE Transactions on Microwave Theory and Techniques,2013,61(3):1291-1300.