摘要
<正>本文系统地描述了一系列银-氧化铟锡(Ag-ITO)共溅薄膜的制备和研究,通过调控薄膜中银的含量,获得了微观结构上的同质混合薄膜,此时少量掺杂的银的含量(<3 at.%)被证明具有最优值。同时,银的引入显著增强了ITO中In_2O_3多晶的择优取向,尤其反映在其(222)、(400)、(440)峰的强度提升。更有意义的是,混合薄膜的介电常数具有极大的可调谐性,即通过改变薄膜的成分及快速热退火处理,介电常数变零点波长(Cross-over point)及近零区域
引文
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