层状C_2N体系电子结构和光学性质的GW+BSE的理论研究
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摘要
本文使用基于多体微扰理论的GW+BSE方法,对新近合成的二维层状材料C_2N[1]进行了理论研究。从单层到体相材料,C_2N电子带隙从3.74eV减小到1.89eV。格林函数GW方法得到的准粒子带隙相比于局域密度近似(LDA)大出多达0.9eV。在C_2N体系中,激子效应对于光学性质有着重要的作用。多层C_2N体系中,束缚激子的结合能至少达到0.6eV,而在体相体系中只有0.04eV。C_2N层状材料在可见光区均表现出很强的光吸收性质。这一特点让它有望成为太阳能利用的新材料,例如太阳能光解水。
A newly synthesized layered material C_2N was investigated based on manybody perturbation theory using GW plus Bethe-Salpeter equation approach. The electronic band gap was determined to be ranging from 3.75 to 1.89 e V from monolayer to bulk. Significant GW quasiparticle corrections, of more than 0.9 e V, to the Kohn-Sham band gaps from the local density approximation(LDA) calculations are found. Strong excitonic effects play a crucial role in optical properties. We found large binding energies of greater than 0.6 e V for bound excitons in few-layer C_2N, while it is only 0.04 e V in bulk C_2N. All the structures exhibit strong and broad optical absorption in the visible light region, which makes C_2N a promising candidate for solar energy conversion, such as photocatalytic water splitting.
引文
[1]Mahmood,J.;Lee,E.K.;Jung,M.;Shin,D.;Jeon,I.-Y.;Jung,S.-M.;Choi,H.-J.;Seo,J.-M.;Bae,S.Y.;Sohn,S.-D.et al.Nature Communications 2015,6:6486.

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