反式平面钙钛矿太阳能电池中致密层与隧道结的调控关系
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- 英文论文题名：Tunable Tunnel Junction and Compact layer in Inverted Planar Perovskite Solar Cell
- 论文作者：陈炜
- 英文论文作者：Wei Chen ; Michael Gr?tzel Centre for Mesoscopic Solar Cells ; Wuhan National Laboratory for Optoelectronics ; Huazhong University of Science and Technology
- 年：2016
- 作者机构：华中科技大学,武汉光电国家实验室(筹),格兰泽尔介观太阳能电池研究中心;
- 论文关键词：钙钛矿太阳能电池 ; 致密层 ; 隧道结
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第二十二分会：有机光伏的机遇和挑战
- 语种：中文
- 分类号：TM914.4
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第二十二分会 ; 有机光伏的机遇和挑战
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：181k
- 原文格式：D
- 会议级别：全国
摘要
我们的前期工作~([1])实现了大面积(>1cm~2)反式平面钙钛矿电池>15%的高效率。本文基于暗态下的J-V曲线,首次报道了MAPbI_3基反式平面钙钛矿太阳能电池中出现的负阻特性。负阻对应的电压范围与隧道二极管应用中的偏压相当,并且负阻特性参数可以通过改变致密层厚度来进行调节,这使得MAPbI_3钙钛矿可能具备新的潜在应用价值,如作为振荡器中的负阻原件等。我们的研究表明,FTO/MAPbI_3界面处会形成隧道结,其能带结构随着偏压的变化而变化,从而导致漏电和负阻现象的产生,这就揭示了致密层在高效钙钛矿太阳能电池中的重要作用。我们的工作提出了钙钛矿新的潜在应用价值,为钙钛矿太阳能电池器件的结构优化提供了启示。
Fabrication of inverted planar perovskite solar cells with an aperture area >1 square centimeter that have a PCE >15% was achieved in our previous work. In this work, dark J-V characteristics of the devices with different compact layer thickness were studied systematically, and the negative differential resistance(NRD) characteristic was firstly reported. The voltage range of NRD was comparable with that of tunnel diode applications, and the NRD characteristic parameters could be tuned by changing the compact layer thickness, which give perovskites new potential application values, such as oscillators. A tunnel junction is formed at the FTO/MAPbI_3 interface, resulting in the shunt and NRD characteristic as its energy band changing with the bias, which reveals the important effect of the compact layer on the excellent device performance. This work proposes a new application of perovskites and inspires the device structure optimization of perovskite solar cells.
Fabrication of inverted planar perovskite solar cells with an aperture area >1 square centimeter that have a PCE >15% was achieved in our previous work. In this work, dark J-V characteristics of the devices with different compact layer thickness were studied systematically, and the negative differential resistance(NRD) characteristic was firstly reported. The voltage range of NRD was comparable with that of tunnel diode applications, and the NRD characteristic parameters could be tuned by changing the compact layer thickness, which give perovskites new potential application values, such as oscillators. A tunnel junction is formed at the FTO/MAPbI_3 interface, resulting in the shunt and NRD characteristic as its energy band changing with the bias, which reveals the important effect of the compact layer on the excellent device performance. This work proposes a new application of perovskites and inspires the device structure optimization of perovskite solar cells.
引文
[1]Chen,W.;Wu,Y.;Yue,Y.;Liu,J.;Zhang,W.;Yang,X.;Chen,H.;Bi,E.;Ashraful,I.;Gr?tzel,M.;Han,L.Science 2015,350:944-948.