C波段双层MEMS滤波器的设计
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- 英文论文题名：The Design of Double Layer C-band MEMS Filter
- 论文作者：彭艳君 ; 贾宝富 ; 杨晓瑜 ; 施朝著
- 英文论文作者：PENG Yan-jun ; JIA Bao-fu ; YANG Xiao-yu ; SHI Chao-zhu ; Institute of microwave and millimeter wave ; AVIC Chengdu Yaguang Electronics Co. ; School of Physical Electronics ; University of Electronic Science and Technology of China
- 年：2016
- 作者机构：成都亚光电子股份有限公司微波毫米波研究所;电子科技大学物理电子学院;
- 论文关键词：MEMS ; 带通滤波器 ; 交指结构 ; 小型化
- 英文论文关键词：MEMS ; band pass filter ; interdigital structure ; miniaturization
- 会议召开时间：2016-08-17
- 会议录名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议论文集
- 语种：中文
- 分类号：TN713
- 学会代码：WBXB
- 会议名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议
- 会议地点：中国陕西西安
- 主办单位：中国电子学会微波分会、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：4
- 文件大小：626k
- 原文格式：D
- 会议级别：全国
摘要
微波滤波器作为通信、雷达等系统中重要的选频元件,其性能好坏将直接影响整个通信系统的性能[1]。滤波器的高性能、小型化是目前主要的研制目标。本文介绍了C波段双层微机械(Micro-Electro-Mechanical System,MEMS)滤波器,采用抽头交指结构,采用电感耦合等离子(Inductively Coupled Plasma,ICP)深硅刻蚀和金-金键合工艺实现封闭谐振腔,大大减少了体积和辐射损耗。滤波器中心频率为4.1GHz,,相对带宽15%,驻波小于1.5,3.2GHz&5GH处抑制大于45 d B。芯片尺寸为7 mm×7.8 mm×0.8 mm。本文给出了该滤波器的具体制作流程。实物测试结果表明,获得的MEMS滤波器的测试结果与仿真结果基本一致。
Microwave filter is an important element in communications, radar and other systems, its performance will directly affect the performance of the entire communication system [1].Highperformance and miniaturization of filter are the main development objectives. This article describes a C-band double layer MEMS(Micro-Electro-Mechanical System) filter, which usingthe tap interdigitated structure, and inductively coupled plasma(Inductively Coupled Plasma, ICP) deep silicon etching and gold- gold bonding process to achieve closure resonator, in this way, it greatly reducing the volume and radiation loss. Filter center frequency is 4.1GHz, relative bandwidth is 15%, VSWR less than 1.5, inhibition at 3.2GHz & 5GH is both greater than 45 d B. The filter Chip size is 7 mm × 7.8 mm × 0.8 mm. In this paper, we also describethe specific production process of the filter. It shows that the test results and our simulation results arealmost the same.
Microwave filter is an important element in communications, radar and other systems, its performance will directly affect the performance of the entire communication system [1].Highperformance and miniaturization of filter are the main development objectives. This article describes a C-band double layer MEMS(Micro-Electro-Mechanical System) filter, which usingthe tap interdigitated structure, and inductively coupled plasma(Inductively Coupled Plasma, ICP) deep silicon etching and gold- gold bonding process to achieve closure resonator, in this way, it greatly reducing the volume and radiation loss. Filter center frequency is 4.1GHz, relative bandwidth is 15%, VSWR less than 1.5, inhibition at 3.2GHz & 5GH is both greater than 45 d B. The filter Chip size is 7 mm × 7.8 mm × 0.8 mm. In this paper, we also describethe specific production process of the filter. It shows that the test results and our simulation results arealmost the same.
引文
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[2]Chan V W C,Han C H,Chan P C H.Resist hardening by fluorocarbon plasm for electron-beam and optical mix-and-match lithography[J].J Vac ci Technol:B,2001,19(3):743-748.
[3]YU Y W,ZHANG Y,ZHU M.silicon micro-machined Ka-band filters[C].Proceeding of Microwave and Millimeter Wave Technology ICMMT.Nanjing,China,2008,1397-1400
[4]VELOSO A,RANGARSSON L A,CHO M J,et al.Gate-last vs gate-first technology for aggressively scaled EOT logic RF CMOS[C].Proceedings of the VLSI Technology,Ho-no lulu,USA,2011,34-35
[5]Zhu J,Yu Y,Lin.L,Micro-machined Silicon Via-holes and Interdigital Bandpass Filters[C].Symposium on Design,Test,Integration and Package of MEMS/MOEMS(DTIP 2005),Montreux,Switzerland,2005:86-89
[6]杜建洪.微带交指带通滤波器计算辅助设计[J].微波学报,1991,26(3):40-47
[7]李绪益.微波技术与微波电路[M].广州:华南理工出版社,2012,180-183
[8]Kang W K,Park C H,Han S J.A new design procedure of tapped couple-line filters[C].Antennas and Propagation Society In Symposium,2014,IEEEMonterey,CA,USA,2004:2863-2866