一种太赫兹肖特基二极管的SDD模型
详细信息 查看官网全文
- 英文论文题名：A SDD Model of the Schottky Barrier Diode
- 论文作者：任田昊 ; 张勇 ; 延波 ; 徐锐敏
- 英文论文作者：REN Tian-hao ; ZHANG Yong ; YAN Bo ; XU Rui-min ; University of Electronic Science and Technology of China
- 年：2016
- 作者机构：电子科技大学;
- 论文关键词：太赫兹 ; 肖特基势垒二极管 ; SDD模型 ; 建模
- 英文论文关键词：Terahertz ; Schottky barrier diode ; SDD model ; modeling technology
- 会议召开时间：2016-08-17
- 会议录名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议论文集
- 语种：中文
- 分类号：TN311.7
- 学会代码：WBXB
- 会议名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议
- 会议地点：中国陕西西安
- 主办单位：中国电子学会微波分会、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：3
- 文件大小：530k
- 原文格式：D
- 会议级别：全国
摘要
本文利用ADS(advanced design system)软件建立了太赫兹肖特基二极管的SDD(symbolically-defined device)模型。该模型基于肖特基二极管的半导体理论,采用方程的形式来描述端口的特性。仿真得到的I-V曲线与实测结果有很高的吻合度,C-V曲线也与理论预测一致,最后将该SDD模型应用到一个140-160GHz理想平衡式二倍频器中,仿真得到的效率大于76.5%。当用与之参数一致的ADS自带的spice(simulation program with integrated circuit emphasis)模型代替后,二者的仿真结果具有很高的一致性。这说明了该SDD模型的准确性。相对于一般的spice模型,该SDD二极管模型的优势是结构简单、灵活性高,可根据用户需要灵活调整所有的方程和参数。
In this paper, a SDD(symbolically-defined device) model of the Schottky barrier diode is built by using ADS(advanced design system). This model is based on semiconductor theory and the terminal characteristics are described by equations. The simulated I-V shows a good agreement with the measured one. The simulated C-V also agrees well with theory prediction. We have also used the SDD model into a 140-160 GHz ideal frequency doubler and the simulated efficiency is better than 76.5%. When the SDD model is replaced by the corresponding spice(simulation program with integrated circuit emphasis) model, the two simulated results show a very good agreement, which proves the validation of the SDD model. The advantages of SDD model are its simplicity and flexibility. Users can modify every equation and parameter as they want.
In this paper, a SDD(symbolically-defined device) model of the Schottky barrier diode is built by using ADS(advanced design system). This model is based on semiconductor theory and the terminal characteristics are described by equations. The simulated I-V shows a good agreement with the measured one. The simulated C-V also agrees well with theory prediction. We have also used the SDD model into a 140-160 GHz ideal frequency doubler and the simulated efficiency is better than 76.5%. When the SDD model is replaced by the corresponding spice(simulation program with integrated circuit emphasis) model, the two simulated results show a very good agreement, which proves the validation of the SDD model. The advantages of SDD model are its simplicity and flexibility. Users can modify every equation and parameter as they want.
引文
[1]甘仲明.毫米波通信节数与系统.北京:电子工业出版社,2003,51一1041甘仲明.毫米波通信节数与系统.北京:电子工业出版社,2003,51一104
[2]A.Maestrini,I.Mehdi,R.Lin,J.V.Siles,C.Lee,J.Gill,G.Chattopadhyay,E.Schlecht,T.Bertrand,and J.Ward,“A 2.5-2.7 THz Room Temperature Electronic Source,”in 22nd International Symposium on Space Terahertz Technology Tucson,Arizona,Apr.2011.
[3]E.Schlecht,F.Maiwald,G.Chattopadhyay,S.Martin,and I.Mehdi,Design considerations for heavily-doped cryogenic Schottky diode varactor multipliers:Pasadena,CA:Jet Propulsion Laboratory,National Aeronautics and Space Administration,2001.
[4]Wang C,Xu Y,Yu X,et al.An electrothermal model for empirical large-signal modeling of Al Ga N/Ga N HEMTs including self-heating and ambient temperature effects[J].Microwave Theory and Techniques,IEEE Transactions on,2014,62(12):2878-2887.
[5]闻彰,徐跃杭,徐锐敏.氮化镓功率器件小信号模型参数提取算法研究[J].电波科学学报,2015,4:026.
[2]A.Maestrini,I.Mehdi,R.Lin,J.V.Siles,C.Lee,J.Gill,G.Chattopadhyay,E.Schlecht,T.Bertrand,and J.Ward,“A 2.5-2.7 THz Room Temperature Electronic Source,”in 22nd International Symposium on Space Terahertz Technology Tucson,Arizona,Apr.2011.
[3]E.Schlecht,F.Maiwald,G.Chattopadhyay,S.Martin,and I.Mehdi,Design considerations for heavily-doped cryogenic Schottky diode varactor multipliers:Pasadena,CA:Jet Propulsion Laboratory,National Aeronautics and Space Administration,2001.
[4]Wang C,Xu Y,Yu X,et al.An electrothermal model for empirical large-signal modeling of Al Ga N/Ga N HEMTs including self-heating and ambient temperature effects[J].Microwave Theory and Techniques,IEEE Transactions on,2014,62(12):2878-2887.
[5]闻彰,徐跃杭,徐锐敏.氮化镓功率器件小信号模型参数提取算法研究[J].电波科学学报,2015,4:026.