γ射线辐照CMOS有源像素传感器的总剂量辐射效应研究
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- 英文论文题名：Research on ionization damage in γ-ray-irradiated CMOS active pixel sensor
- 论文作者：汪波 ; 李豫东 ; 郭旗 ; 刘昌举 ; 任迪远 ; 文林 ; 玛丽娅 ; 曾骏哲 ; 王海娇
- 英文论文作者：Wang Bo ; Li Yu-dong ; Guo Qi ; Liu Chang-ju ; Ren Di-yuan ; Wen Lin ; MA Li-ya ; Zeng Jun-zhe ; Wang Hai-jiao ; Key Laboratory of Functional Materials and Devices under Special Environments ; CAS. ; Xinjiang Key Laboratory of Electric Information Materials and Devices ; Xinjiang Technical Institute of Physics and Chemistry ; CAS. ; Graduate University of Chinese Academy of Sciences ; Chongqing Optoelectronics Research Institute
- 年：2014
- 作者机构：中国科学院特殊环境功能材料与器件重点试验室;新疆电子信息材料与器件重点试验室;中国科学院新疆理化技术研究所;中国科学院大学;重庆光电技术研究所;
- 论文关键词：CMOS APS ; 暗信号 ; 像素单元结构 ; 电离总剂量 ; LOCOS隔离
- 英文论文关键词：CMOS APS ; dark signal ; pixel unit ; total ionizing dose ; LOCOS isolation
- 会议召开时间：2014-08-13
- 会议录名称：第十七届全国核电子学与核探测技术学术年会论文集
- 语种：中文
- 分类号：TP212
- 学会代码：HDZX
- 会议名称：第十七届全国核电子学与核探测技术学术年会
- 会议地点：中国甘肃兰州
- 主办单位：中国电子学会、中国核学会核电子学与核探测技术分会
- 学会名称：中国电子学会核电子学与核探测技术分会
- 页数：11
- 文件大小：712k
- 原文格式：D
- 会议级别：全国
摘要
为研究某国产0.5μmC MOS(Complementary Metal Oxide Semiconductor,互补金属氧化物半导体)N阱工艺CMOS有源像素传感器(CMOS Active Pixel Sensors简称CMOS APS)的电离总剂量效应,分别对传感器的整体电路和像素单元结构进行了~(60)Co-γ辐照试验,分析了辐射对器件主要性能指标的影响。在辐照与退火过程中,采用离线测试的方法,重点考察了器件的暗信号、暗信号非均匀性、饱和输出信号、像素单元输出信号等参数的变化规律。试验发现随着辐照剂量的增加,暗信号和暗信号非均匀性均显著退化,饱和输出信号逐渐减小且与像素单元饱和输出信号变化基本一致。分析认为暗信号退化的主要原因是光电二极管PN结和复位晶体管源端N+/P_(sub)结表面边界周围的SiO_2产生了大量的界面态;饱和输出信号退化的主要原因是光电二极管受辐照后耗尽层电容减小,从而导致满阱容量下降。通过~(60)Co-γ辐照试验,结合像素单元结构与CMOS APS整体电路的辐射损伤,0.5μm工艺CMOS APS受辐射后参数退化的主要原因是光电二极管周围的整个LOCOS隔离氧化层产生了大量的辐射感生电荷。
In order to evaluate the effect of space radiation on the imaging function of a CMOS Active Pixel Sensors manufactured in a 0.5μm CMOS N-Well technology, the influence of the total dose damage effects on the main specifications of the CMOS Active Pixel Sensors was analyzed based on the experiments of the device overall circuit and pixel unit of ~(60)Co-γ radiation. When the total dose of irradiation reached at a certain value and during annealing, the dark signal, dark signal non-uniformity, saturated output signal and pixel unit output signal was measured quantitatively off line. One can see from the experimental,mean dark signals and dark signal non uniformity dramatically increased with total dose, while saturation output signal follows the output signal of the pixel unit saturation decreases with total dose. We found that most of the total dark signal in a pixel is coming from the depletion of the photodiode edge at the surface and the leakage of the source region of the reset transistor. Saturated output signal degradation mainly caused by the photodiode depletion layer capacitance decreases of irradiation, resulting in full-well capacity decline. Through the ~(60)Co-γ irradiation test, CMOS APS of the whole circuit combined with unit pixel structure degradation, the main reason of 0.5μm process CMOS APS degradation is the LOCOS isolation oxide layer where photodiode surrounding produces a lot of radiation induced charge.
In order to evaluate the effect of space radiation on the imaging function of a CMOS Active Pixel Sensors manufactured in a 0.5μm CMOS N-Well technology, the influence of the total dose damage effects on the main specifications of the CMOS Active Pixel Sensors was analyzed based on the experiments of the device overall circuit and pixel unit of ~(60)Co-γ radiation. When the total dose of irradiation reached at a certain value and during annealing, the dark signal, dark signal non-uniformity, saturated output signal and pixel unit output signal was measured quantitatively off line. One can see from the experimental,mean dark signals and dark signal non uniformity dramatically increased with total dose, while saturation output signal follows the output signal of the pixel unit saturation decreases with total dose. We found that most of the total dark signal in a pixel is coming from the depletion of the photodiode edge at the surface and the leakage of the source region of the reset transistor. Saturated output signal degradation mainly caused by the photodiode depletion layer capacitance decreases of irradiation, resulting in full-well capacity decline. Through the ~(60)Co-γ irradiation test, CMOS APS of the whole circuit combined with unit pixel structure degradation, the main reason of 0.5μm process CMOS APS degradation is the LOCOS isolation oxide layer where photodiode surrounding produces a lot of radiation induced charge.
引文
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[16]Goiffon V,Estribeau M,Magnan P.Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOSimaging technology[J].Electron Devices,IEEE Transactions on,2009,56(11):2594-2601.
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[18]Goiffon V,Estribeau M,Magnan P.Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation[J].2009.
[19]Rao P R,Wang X,Theuwissen A J P.Degradation of CMOS image sensors in deep-submicron technology due toγ-irradiation[J].Solid-State Electronics,2008,52(9):1407-1413.
[2]Magna P.Detection of visible photons in CCDand CMOS:a comparative view[J].Nuclear Instruments and Methods in Physics Research A,2003,504:199-212.
[3]张立国,李豫东,刘则洵,等.TDI CCD的总剂量效应及测试[J].光学精密工程,2009,17(12):2924-2930.
[4]李豫东,张立国,任建岳.空间光学遥感器中Flash存储器的辐射效应与加固[J].光学精密工程,2008,16(10):1858-1863.
[5]李豫东,任建岳,金龙旭,等.SRAM、ROM的总剂量辐射效应及损伤分析[J].光学精密工程,2009,17(4):787-793.
[6]Goiffon V,Cervantes P,Virmontois C,et al.Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes[J].Nuclear Science,IEEETransactions on,2011,58(6):3076-3084.
[7]Bogaert J,Dierickx B.Total dose effects on CMOS active pixel sensors[C]//Electronic Imaging.International Society for Optics and Photonics,2000:157-167.
[8]Rao P R,Wang X,Theuwissen A J P.Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due toγ-irradiation[C]//Solid State Device Research Conference,2007.ESSDERC 2007.37th European.IEEE,2007:370-373.
[9]孟祥提,康爱国,黄强.γ射线辐照对数字型彩色CMOS图像传感器输出特性的影响[J].原子能科学技术,2004,1.
[10]李豫东,汪波,郭旗,等.CCD与CMOS图像传感器辐射效应测试系统[J].光学精密工程,2013,21(11):42-48.
[11]汪波,李豫东,郭旗,等.60Co-γ射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究[J].物理学报,2014,63(5):56102-056102.
[12]Schwank J R,Shaneyfelt M R,Fleetwood DM,et al.Radiation effects in MOS oxides[J].Nuclear Science,IEEE Transactions on,2008,55(4):1833-1853.
[13]Ma T P,Dressendorfer P V.Ionizing radiation effects in MOS devices and circuits[J].1989.
[14]Goiffon V,Magnan P,Bernard F,et al.Ionizing Radiation Effects on CMOS imagers manufactured in deepsubmicron process[C]//Proceedings of SPIE-The International Society for Optical Engineering.2008,6816.
[15]Goiffon V,Cervantes P,Virmontois C,et al.Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes[J].Nuclear Science,IEEETransactions on,2011,58(6):3076-3084.
[16]Goiffon V,Estribeau M,Magnan P.Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOSimaging technology[J].Electron Devices,IEEE Transactions on,2009,56(11):2594-2601.
[17]Bogaerts J,Dierickx B,Meynants G,et al.Total dose and displacement damage effects in a radiation-hardened CMOS APS[J].Electron Devices,IEEE Transactions on,2003,50(1):84-90.
[18]Goiffon V,Estribeau M,Magnan P.Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation[J].2009.
[19]Rao P R,Wang X,Theuwissen A J P.Degradation of CMOS image sensors in deep-submicron technology due toγ-irradiation[J].Solid-State Electronics,2008,52(9):1407-1413.