一种基于SIW的Ka波段窄带滤波器
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摘要
本文基于MEMS工艺设计了一种小型化Ka波段滤波器,该滤波器采用高阻硅基片集成波导(SIW)结构形式。理论分析了滤波器的结构参数并使用三维电磁场分析软件HFSS对该结构进行了仿真。设计得到了中心频率36.3GHz,相对带宽1.6%,插入损耗4d B的滤波器,回波损耗优于20d B,在f0±1.3GHz处带外抑制达到40d B。芯片尺寸为10mm×2mm×0.4mm。相对于传统波导结构的滤波器,大大缩小了体积,实现了小型化,容易集成在系统中,具有重要意义。
A miniaturized Ka-band filter with the silicon-based SIW(substrate integrated waveguide) structure was designed based on the MEMS technology. The structure parameters of the filter were analyzed and calculated theoretically, and the filter was simulated by 3D electro-magnetic field analysis software HFSS. The Ka-band MEMS filter was designed with a center frequency f0 of 36.3GHz, and the bandwidth 1.6%. The results show that the insertion loss is 4 d B, the return loss is 20 d B, and the rejection at f0±1.3GHz is 40 d B. The final size of the chip is 10 mm×2 mm×0.4 mm.
引文
[1]D.Deslandes and K.Wu,Integrated Transition of coplanar to Rectangular Waveguides[C].IEEE MTTSymposium digest.Phoenix 2001,2:619-622.
    [2]甘本袚,吴万春,现代微波滤波器的结构与设计(上)[M].北京:科学出版社,1973.5.
    [3]G.L.Matthaei,L.Young,and E.M.T.Jones,Microwave Filters,Impedance Matching Networks,and Coupling Structures[M].New York:Artech House,1980:615-620..
    [4]杨志,杨拥军等,硅基双层结构SIW毫米波MEMS滤波器[J].微纳电子技术,2013,6:376-379

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