全干掩模法制备尺寸可控的双极性石墨烯纳米带晶体管
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摘要
传统的石墨烯纳米带场效应晶体管在剥离纳米带和器件制备过程中都涉及湿处理。于是我们提出了一种简单、新颖的无溶液法制备石墨烯纳米带及其场效应晶体管,我们分别采用金膜和SnO_2纳米带作为掩膜来沉积电极和制备石墨烯纳米带,并通过金膜和SnO_2纳米带尺寸来控制沟道长、宽。在大气环境中,宽度为330nm的石墨烯纳米线表现出明显的双极性特性,空穴和电子的迁移率高达904和703cm~2V~(-1)s~(-1)。我们将上述结果归功于全干法制备石墨烯纳米带及其器件。
Conventional graphene nanoribbon(GNR) field-effect transistor(FET) fabrication involved the wetprocess with the separated nanoribbon formation and device fabrication. Here, we demonstrate onesimple and novel non-solution method to integrate the GNR formation and the FET fabrication, where agold film is used as mask for electrode deposition, following by using a SnO_2 nanoribbon as mask for theformation of GNR. The channel length and width can be controlled by the widths of the gold film andthe SnO_2 nanoribbon, respectively. It is found that the GNR with the width up to 330 nm presents thepromising ambipolar field-effect properties in air ambient, the hole and electron mobilities arerespectively as high as 904 and 703 cm~2V~(-1)s~(-1), which benefits from the all dry process for both GNRfabrication and device fabrication.
引文
[1]X.Y.Yang,X.Dou,A.Rouhanipour,L.Zhi,J.H.J.R?der,K.Müllen,Twodimensional graphene nanoribbons,J.Am.Chem.Soc.130(2008)4216–4217.
    [2]A.Genorio,B.Znidarsic,Functionalization of graphene nanoribbons,Phys.J.D:Appl.Phys.47(2014)1–13.
    [3]L.Ma,J.L.Wang,F.Ding,Recent progress and challenges in graphenenanoribbon synthesis,Chem.Phys.Chem.14(2013)47–54.

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