两步电沉积法制备Ag-Sn-S三元硫化物薄膜
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摘要
有机污染物对人体健康和生态环境具有严重的危害[1]。如何经济有效的去除这些污染,成为世界难题[2]。半导体材料光催化降解有机物的出现,为去除有机物污染物提供了极具潜力的方法。但是现有的光催化剂存在着缺陷,常用的光催化剂为宽带隙半导体,只在紫外光下具有良好的响应(如TiO2[3])。太阳光只有4%的能量在紫外光区域,而43%的能量在可见光区域,所以制备出在可见光照射下具有高催化活性的新型窄带隙半导体催化剂成为研究重点[4]。Ag_8SnS_6是一种新型的三元窄带隙半导体化合物,它的带隙为1.39 eV[5]。在可见光的照射下Ag_8SnS_6具有比TiO2 P25更好的光催化活性[6]。在本研究中,对Ag_8SnS_6薄膜制备条件进行了探索,采用了两步法,先使用电沉积法在FTO导电玻璃上电沉积Ag–Sn合金,对得到的合金薄膜的成分使用EDS进行分析,通过对沉积电流密度的控制,当电流密度为–0.5 m A/cm2,最后得到了Ag/Sn原子比约为8的合金薄膜。然后对Ag–Sn合金薄膜进行硫化处理,得到了Ag–Sn–S的三元薄膜,通过XRD的分析,其中含有Ag_8SnS_6晶粒。
Organic pollutants are important composition in dyes' wastewater. How to degrade the dyes becomes a worldwide problem. However, the photocatalysis is a kind of potential technique for removing the hazardous organic contaminants from sewage. Ag_8Sn S_6 is a narrow band gap semiconductor, and its band energy gap is 1.39 eV. Because its valence band contains S3p orbital, it has a good photocatalytic activity under visible light radiation. In this research, A two–step method was used in the study. Firstly, the Ag–Sn alloy film was electrodeposited on FTO conductive glass with different current density. When the current denisy was –0.5 m A/cm~2, the atomic ratio of Ag/Sn was close to 8. And then the Ag–Sn alloy films were sulfurized with sulphur vapour in a tubular furnace. A ternary sulfide of Ag–Sn–S was obtained.
引文
[1]Forgacs,E.;Cserhati,T.;Oros,G.Environ.Int.2004;30:953-971.
    [2]Singh,K.;Arora,S.Crit.Rev.Env.Sci.Tec.2011,41:807-878.
    [3]Fujishima,A.;Rao,T.;Tryk D.;J Photoch.Photobio.C.2000,1:1-21.
    [4]Silva,L.;Ryu,S.;Choi,J.;Choi,W.J Phys.Chem.C.2008,112:12069-12073.
    [5]Osipishi,I.;Butsko,N.;Gasii,B.;Zhezhnic,I.;Sov.Phys.Semicond.1972,1:974-976.
    [6]Hu,W.;Shi,Y.;Wu L.;Cryst.Growth.Des.2012,12:3458-3464.

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