化学气相沉积法制备超薄石墨炔
详细信息    查看官网全文
摘要
石墨炔是一种由sp-和sp~2-杂化碳原子构成的新型二维碳材料。由于具有独特的结构和性能,石墨炔被预测在纳米器件、非线性光学、储能、气体分离等领域有广泛应用。因此,制备单层石墨炔、探索石墨炔本征性质对于石墨炔的基础研究及应用发展都十分重要。目前,石墨炔的制备是于溶液中利用六乙炔基苯在铜片的催化作用下进行偶联而实现的。但由于溶液合成法在制备过程中对于石墨炔的层数、形貌等控制不佳,单层石墨炔仍未被成功制备。本文介绍了利用化学气相沉积低温制备超薄(单层)石墨炔的方法。以六乙炔基苯为源,银箔为生长基底,在金属基底的催化作用下通过分子间末端炔基的偶联反应在基底上直接生长石墨炔。通过检测拉曼光谱中C≡C伸缩振动模峰位的变化,验证了生长过程中单体向偶联产物的转变。由于具有π共轭结构,生长的薄膜的导电性为6.72S cm~(-1),并且可作为淬灭分子荧光、增强分子拉曼光谱的基底。
Graphdiyne, a new form of two-dimensional carbon material containing sp-and sp~2-hybridized carbon atoms, is expected to have extensive applications in nanoelectronics, non-linear optics, energy storage, gas separation and so on. The fundamental studies of its intrinsic properties are thereby urgently required, yet are undoable due to the unavailability of its monolayer synthesis. We reported herein the growth of ultrathin(monolayer) graphdiyne film by adopting low-temperature chemical vapor deposition. Using hexaethynylbenzene as precursor, the graphdiyne film was formed directly on silver surface via a surface-assisted homocoupling reaction of terminal alkyne. The conversion of precursor monomers to the linked network was supported by the upshift of C≡C stretching mode. With the extended π-conjugation structure, the as-grown film exhibited the electrical conductivity up to 6.72 S cm~(-1). Moreover, the film showed the potential as a substrate to suppress fluorescence and enhance Raman signals of adsorbed molecules.
引文
[1]Haley,M.M.;Brand,S.C.;Pak,J.J.Angew.Chem.Int.Ed.1997,36:836.
    [2]Li,G.X.;Li,Y.L.;Liu,H.B.;Guo,Y.B.;Li,Y.J.;Zhu,D.B.Chem.Commun.2010,46:3256.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700