高能电子束在横向磁场中的蒙特卡罗研究
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摘要
文本使用蒙特卡罗方法研究了能量分别为6、10、15 MeV的高能电子束在0、1.0、1.5 T横向磁场中的穿透深度和剂量分布,并提出了穿透深度的计算公式。模拟结果显示,在1.5 T的磁场中10 MeV电子束的射程与无磁场相比减少52%,峰值剂量与表面剂量的比值达到2.17,在射程的1.37 cm处形成了类似于重离子的伪布拉格峰,随后剂量快速的跌落。并利用上述计算公式得到电子束在磁场中的穿透深度,并与MC的模拟值相比较,其误差均小于0.5cm。研究结果表明,利用该计算公式可以快速准确得到高能电子束在横向磁场中的穿透深度;并证明横向磁场明显改变了电子束的剂量分布,但没有消除它在射程末端剂量快速跌落和峰值剂量与表面剂量比值高等治疗优势,为电子束的肿瘤治疗提供了一种具有很大潜力的治疗手段。
引文
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