一种改进RGC结构10Gb/s无电感跨阻放大器设计
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- 英文论文题名：Design of 10Gb/s Inductorless Modified-RGC Transimpedance Amplifier
- 论文作者：赵君赫 ; 国云川
- 英文论文作者：ZHAO Jun-he ; GUO Yun-chuan ; Fundamental Science on EHF Laboratory ; University of Electronic Science and Technology of China
- 年：2016
- 作者机构：电子科技大学极高频复杂系统国防重点学科实验室;
- 论文关键词：跨阻放大器 ; CMOS工艺 ; 去电感化 ; 低电压
- 英文论文关键词：transimpedance amplifier ; CMOS process ; inductorless ; low voltage supply
- 会议召开时间：2016-08-17
- 会议录名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议论文集
- 语种：中文
- 分类号：TN722
- 学会代码：WBXB
- 会议名称：2016年全国军事微波、太赫兹、电磁兼容技术学术会议
- 会议地点：中国陕西西安
- 主办单位：中国电子学会微波分会、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：4
- 文件大小：719k
- 原文格式：D
- 会议级别：全国
摘要
基于TSMC 65nm CMOS工艺,提出了一种低噪声、低功耗的10Gb/s光通信接收机跨阻前置放大器(TIA)设计。该TIA采用1.2V低电压供电,没有采用电感以大幅度减小芯片面积,可稳定工作于10Gb/s速率。当光电二极管电容为250fF时,电路的-3d B带宽为8.5GHz,跨阻增益66d B。平均等效输入电流谱密度约为16p A/√Hz(0~10GHz),总的等效输入噪声电流为1.2u A。该电路功耗为11.7mW,芯片面积仅为115um×120um。
A design of low-power and wideband transimpedance pre-amplifier(TIA) was implemented in TSMC 65 nm CMOS process for 10Gb/s high-speed optical communications. With a supply voltage of 1.2V, the area of the TIA circuit is smaller without inductance and it can operate at a bit rate of 10Gb/s stably. The receiver preamplifier circuit is with a transimpedance gain of up to 66 d B and-3d B bandwidth of 8.5GHz,which accommodates a photodiode capacitor of 250 fF. The noise simulation result shows that the average input-referred noise current spectral density is 16 p A/√Hz(0~10GHz), the total equivalent input current noise is 1.2u A. The power dissipation of the chip is 11.7mW and the chip area is only 115um×120um.
A design of low-power and wideband transimpedance pre-amplifier(TIA) was implemented in TSMC 65 nm CMOS process for 10Gb/s high-speed optical communications. With a supply voltage of 1.2V, the area of the TIA circuit is smaller without inductance and it can operate at a bit rate of 10Gb/s stably. The receiver preamplifier circuit is with a transimpedance gain of up to 66 d B and-3d B bandwidth of 8.5GHz,which accommodates a photodiode capacitor of 250 fF. The noise simulation result shows that the average input-referred noise current spectral density is 16 p A/√Hz(0~10GHz), the total equivalent input current noise is 1.2u A. The power dissipation of the chip is 11.7mW and the chip area is only 115um×120um.
引文
[1]王魏,武逶,冯其,等.应用于10Gb/s光接收机的全差分CMOS跨阻前置电路设计[J].红外于激光工程,2015,44(5):1587-1592.
[2]吴有恩.CMOS 1.2V电压10Gb/s光接收机前置放大器设计[J].煤炭技术,2011,30(2):35-37.
[3]黄茜,冯军.0.18um CMOS Preamplifier for 10Gb/s Optical Receiver[J]电子器件,2006,29(1):29-32.
[4]赵萌,李雪,韩波,等.高速跨阻放大器设计综述[J].电子器件,2009,32(3):570-573.
[2]吴有恩.CMOS 1.2V电压10Gb/s光接收机前置放大器设计[J].煤炭技术,2011,30(2):35-37.
[3]黄茜,冯军.0.18um CMOS Preamplifier for 10Gb/s Optical Receiver[J]电子器件,2006,29(1):29-32.
[4]赵萌,李雪,韩波,等.高速跨阻放大器设计综述[J].电子器件,2009,32(3):570-573.