基于国产THGEM的低能电子二维位置探测器研究
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摘要
为探测0.1~50MeV低能电子脉冲束流的位置分布,研制基于国产厚型气体电子倍增器(THGEM)的二维位置探测器,位置分辨要求好于200um,灵敏面积为50mm×50mm。THGEM的孔径为150um,孔间距400um,厚度100um。用能量为5.9keV的X射线源~(55)Fe测试不同工作气体的增益,单层最大增益好于1×10~4,双层最大增益好于6×10~4,能量分辨率好于23%。用Geant4模拟了薄膜窗厚度、空气层厚度等对电子透过率和横向扩散的影响,用Garfield模拟了电子雪崩的横向扩散。根据模拟结果,优化了探测器的结构和设计。
A THGEM-based 2D position detector is developed for low energy electron detection. The spatial resolution is required less than 200 um in 50mm×50mm sensitive area. The THGEM is homemade with 150 um hole diameter, 400 um pitch, and 100 um thickness. By using the 5.9 keV X-rays, the gas gain, energy resolution were measured in different gas mixtures. The maximum gas gain of single and double layer THGEMs reach 1*10~4 and 6*10~4,respectively, and the energy resolution is better than 23% for both single and double layer THGEMs,The influences of film's thickness, air-layer's thickness, etc., on the electron transfer efficiency and transverse diffusion were simulated by Geant4. And the transverse diffusion of the electron avalanche was also simulated by Garfield. According to the simulation results, the design and structure of the detector was optimized.
引文
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