蓝宝石晶片研磨用碳化硼微粉的表征
详细信息 查看官网全文
- 英文论文题名：THE CHARACTERIZATION OF BORON CARBIDE AS ABRASIVE MATERIAL OF SAPPHIRE WAFER
- 论文作者：李欣 ; 邢鹏飞 ; 高帅波 ; 都兴红 ; 高波 ; 李大纲
- 英文论文作者：LI Xin ; XING Peng-fei ; GAO Shuai-bo ; DU Xing-hong ; GAO Bo ; LI Da-gang ; School of Materials ; Northeastern University
- 年：2016
- 作者机构：东北大学冶金学院;
- 论文关键词：蓝宝石晶片 ; 碳热还原法 ; 碳化硼 ; 一级品 ; 二级品
- 英文论文关键词：sapphire wafer ; carbothermic reduction ; boron carbide ; high quality ; poor quality
- 会议召开时间：2016-11-10
- 会议录名称：2016（首届）全国铁合金热点难点技术交流会论文集
- 语种：中文
- 分类号：TG73;TQ128
- 学会代码：GYBW
- 会议名称：2016（首届）全国铁合金热点难点技术交流会
- 会议地点：中国内蒙古集宁
- 主办单位：新冶集团资源应用与合金材料事业部、《中国冶金》编辑部
- 学会名称：北京钢研柏苑出版有限责任公司
- 页数：6
- 文件大小：880k
- 原文格式：D
- 会议级别：全国
摘要
蓝宝石晶片需求量的猛增促使碳化硼作为其研磨材料的用量也逐渐增加。而电弧炉碳热还原法制备碳化硼时,由于炉内温区不均一和保温时间的不同,导致所合成的碳化硼品质差别较大,仅有高品质的碳化硼微粉才可用于蓝宝石晶片的研磨。本文采用了化学分析、XRD、SEM等检测方法,从纯度、硼碳比、晶型、物相结构、表观形貌、硬度等方面对两种不同品质的碳化硼微粉进行了一系列的对比分析,并进行了蓝宝石晶片的研磨试验。实验结果表明:蓝宝石研磨用一级品碳化硼微粉具有纯度高(98.35%)、硼碳比接近理论硼碳比4.0、结晶好、致密度高和硬度高(4987.20 kg/mm2)的等特性。一级品碳化硼在用于蓝宝石研磨时具有研磨速率高、研磨时间短、使用寿命长和研磨效果好等优点。
The demand of boron carbide,which is used as the abrasive material of sapphire wafer,is dramatically increasing with the development of sapphire wafer. Commercially,the boron carbide was prepared by arc furnace carbothermic reduction. The quality of boron carbide was heterogeneous due to the temperature and holding time variation in the submerged electronic arc furnace. Only boron carbide powder of high quality could be used in the grinding process of sapphire wafer. In this paper,the influence factors the quality of boron carbide,such as the purity,molar B/C ratio,phase composition,morphology and hardness,were characterized and compared to determine their hardness by chemical analysis,XRD and SEM,respectively. Besides,the grinding experiments of sapphire with different qualities of boron carbide were also proceeded. It was found that only the boron carbide with high purity(98.35%),stoichiometric molar B/C ratio(4/0),high crystallinity and high densification,was qualified as the abrasive material for sapphire wafer. Besides,the high quality of boron carbide resulted in the higher grinding rate,shorter grinding time,longer usage life and better grinding effect in the sapphire grinding experiment.
The demand of boron carbide,which is used as the abrasive material of sapphire wafer,is dramatically increasing with the development of sapphire wafer. Commercially,the boron carbide was prepared by arc furnace carbothermic reduction. The quality of boron carbide was heterogeneous due to the temperature and holding time variation in the submerged electronic arc furnace. Only boron carbide powder of high quality could be used in the grinding process of sapphire wafer. In this paper,the influence factors the quality of boron carbide,such as the purity,molar B/C ratio,phase composition,morphology and hardness,were characterized and compared to determine their hardness by chemical analysis,XRD and SEM,respectively. Besides,the grinding experiments of sapphire with different qualities of boron carbide were also proceeded. It was found that only the boron carbide with high purity(98.35%),stoichiometric molar B/C ratio(4/0),high crystallinity and high densification,was qualified as the abrasive material for sapphire wafer. Besides,the high quality of boron carbide resulted in the higher grinding rate,shorter grinding time,longer usage life and better grinding effect in the sapphire grinding experiment.
引文
[1]李欣,邢鹏飞.蓝宝石的现状与未来发展[J].电子信息材料,2014,3:17-23.
[2]张晓军,周新民.大尺寸蓝宝石单晶的制备方法研究进展[J].绿色科学,2013,8:273.
[3]D.C.Harris.Evolution of the sapphire industry:Rubicon technology and Garish[J].Proc SPIE,2009,73(2):1-12.
[4]F.Thevenot.A review on boron carbide[J].Key Engineer in Materials,1991,56:59-88.
[5]M.Bouchacort,E.Thevenot.The properties and structure of the boron carbide phase,Less-Comm.Met,1981,82:227-235.
[6]G.Goller,C.Toy,A.Tekin,K.C.Gupta.The production of boron carbide by carbothermic reduction.High Temperature Materials and Process,1996,15(1-2):117-122.
[7]邢鹏飞,李欣,王帅,都兴红,高帅波,李盼.一种高品质碳化硼结晶块的冶炼制备方法[P].中国:CN103864077A,2014-06-18.
[8]A.Alizaieh,E.Taheri-Nassaj,N.Ehsani.Synthesis of boron carbide powder by a carbothermic reduction method[J].Journal of the European Ceramic Society,2004,24(10-11):3227-3234.
[9]邢鹏飞,吴龙驹,曹宝胜,吴龙宇.一种蓝宝石晶片研磨用碳化硼粉的生产工艺[P].中国:ZL201410053757.7,CN103864077A,授权日2015-06-25.
[10]C.H.Junga,M.J.Leeb,C.J.Kima.Preparation of carbon free B4C powder from B2O3 by carbon thermal reduction process[J].Materials Letters,2004,2004,58:76-80.
[11]廖家欣,周庆华,唐贵平.碳化硼的显微组织研究[J].长沙电力学院学报(自然科学版),2001(04):69-72.
[12]王永辉,赵慧峰.蓝宝石晶片研磨工艺的研究[J].三门峡职业技术学院学报,2009,8(1):119-121.
[2]张晓军,周新民.大尺寸蓝宝石单晶的制备方法研究进展[J].绿色科学,2013,8:273.
[3]D.C.Harris.Evolution of the sapphire industry:Rubicon technology and Garish[J].Proc SPIE,2009,73(2):1-12.
[4]F.Thevenot.A review on boron carbide[J].Key Engineer in Materials,1991,56:59-88.
[5]M.Bouchacort,E.Thevenot.The properties and structure of the boron carbide phase,Less-Comm.Met,1981,82:227-235.
[6]G.Goller,C.Toy,A.Tekin,K.C.Gupta.The production of boron carbide by carbothermic reduction.High Temperature Materials and Process,1996,15(1-2):117-122.
[7]邢鹏飞,李欣,王帅,都兴红,高帅波,李盼.一种高品质碳化硼结晶块的冶炼制备方法[P].中国:CN103864077A,2014-06-18.
[8]A.Alizaieh,E.Taheri-Nassaj,N.Ehsani.Synthesis of boron carbide powder by a carbothermic reduction method[J].Journal of the European Ceramic Society,2004,24(10-11):3227-3234.
[9]邢鹏飞,吴龙驹,曹宝胜,吴龙宇.一种蓝宝石晶片研磨用碳化硼粉的生产工艺[P].中国:ZL201410053757.7,CN103864077A,授权日2015-06-25.
[10]C.H.Junga,M.J.Leeb,C.J.Kima.Preparation of carbon free B4C powder from B2O3 by carbon thermal reduction process[J].Materials Letters,2004,2004,58:76-80.
[11]廖家欣,周庆华,唐贵平.碳化硼的显微组织研究[J].长沙电力学院学报(自然科学版),2001(04):69-72.
[12]王永辉,赵慧峰.蓝宝石晶片研磨工艺的研究[J].三门峡职业技术学院学报,2009,8(1):119-121.