暴露清洁{111}晶面NiO八面体增强的传感性能研究
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- 英文论文题名：Enhanced Gas-Sensing Properties of Ni O Octahedrons with Exposed Clean {111} Facets
- 论文作者：王淼 ; 王叶 ; 刘俊芳 ; 袁煜昆 ; 杨合情
- 英文论文作者：Miao Wang ; Ye Wang ; Junfang Liu ; Yukun Yuan ; Heqing Yang ; School of Materials Science and Engineering ; Shaanxi Normal University
- 年：2016
- 作者机构：陕西师范大学材料科学与工程学院;
- 论文关键词：{111}晶面 ; NiO八面体 ; 传感性能
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第二十七分会：光化学
- 语种：中文
- 分类号：TN304.21
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第二十七分会 ; 光化学
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：298k
- 原文格式：D
- 会议级别：全国
摘要
氧化镍(NiO),一种重要的宽禁带p型半导体,其禁带宽度在3.6-4.0 e V之间,被广泛应用于锂离子电池、电化学超级电容器、光伏器件、光催化剂和传感器等领域[1]。近年来,人们研究发现暴露不同活性晶面对半导体纳米材料的化学传感性能影响很大,例如:暴露{221}晶面SnO2八面体和暴露{001}晶面ZnO纳米片均具有增强的化学传感性能[2]。然而,暴露{111}晶面NiO八面体化学传感性能的研究至今未见报道。本文对比研究了NiO颗粒、表面吸附Cl-的NiO八面体和暴露清洁{111}表面NiO八面体对不同浓度丙酮、甲醛、三乙胺和乙醇的气敏性能,发现清洁{111}表面的暴露有利于NiO八面体传感性能的增强。
NickelOxide(NiO), an important p-type semiconductor with a wide bandgap of 3.6-4.0 e V, has been widely applied in many areas[1]. Recently, it is found that high-energy facets have a great influence on chemical sensing properties of nanomaterials. For example, both SnO2 octahedrons with exposed {221} facets and ZnO nanoflakes with exposed {001} facets showed much higher sensing properties[2]. In our work, NiO octahedrons with exposed clean {111} surfaces exhibited excellent gas-sensing performance on acetone, formaldehyde, triethylamine and ethanol, compared with Cl-NiO octahedrons and NiO particles.
NickelOxide(NiO), an important p-type semiconductor with a wide bandgap of 3.6-4.0 e V, has been widely applied in many areas[1]. Recently, it is found that high-energy facets have a great influence on chemical sensing properties of nanomaterials. For example, both SnO2 octahedrons with exposed {221} facets and ZnO nanoflakes with exposed {001} facets showed much higher sensing properties[2]. In our work, NiO octahedrons with exposed clean {111} surfaces exhibited excellent gas-sensing performance on acetone, formaldehyde, triethylamine and ethanol, compared with Cl-NiO octahedrons and NiO particles.
引文
[1]Liu,B.;Yang,H.;Wei,A.;Zhao,H.;Ning,L.;Zhang,C.;Liu,S.Appl.Catal.,B 2015,172-173,165.
[2]a)Zhao,Q.;Shen,Q.;Yang,F.;Zhao,H.;Liu,B.;Yang,H.;Liu,S.Sens.Actuators.B 2014,195,71-79;b)Han,X.;Jin,M.;Xie,S.;Jiang,Z.;Jiang,Y.;Xie,Z.;Zheng,L.Angew.Chem.2009,121,9344-9347.
[2]a)Zhao,Q.;Shen,Q.;Yang,F.;Zhao,H.;Liu,B.;Yang,H.;Liu,S.Sens.Actuators.B 2014,195,71-79;b)Han,X.;Jin,M.;Xie,S.;Jiang,Z.;Jiang,Y.;Xie,Z.;Zheng,L.Angew.Chem.2009,121,9344-9347.