TaN薄膜在微波薄膜匹配负载器件中的应用
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- 英文论文题名：Applications of TaN Thin Film in Microwave Matching Terminations
- 论文作者：彭斌 ; 蒋中东 ; 王磊 ; 张万里
- 英文论文作者：Peng Bin ; Jiang Zhong-dong ; Wang Lei ; Zhang Wan-li ; State Key Laboratory of electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China
- 年：2014
- 作者机构：电子科技大学电子薄膜与集成器件国家重点实验室;
- 论文关键词：微波匹配负载 ; Ta N薄膜 ; 电压驻波比 ; 高频大功率
- 英文论文关键词：microwave matching load ; TaN film ; VSWR ; high power and high frequency
- 会议召开时间：2014-07-21
- 会议录名称：2014年全国电磁兼容与防护技术学术会议论文集（上）
- 语种：中文
- 分类号：TB383.2;TN604
- 学会代码：WBXB
- 会议名称：2014年全国电磁兼容与防护技术学术会议
- 会议地点：中国湖南常德
- 主办单位：中国电子学会微波分会、中国工程物理研究院复杂电磁环境科学与技术重点实验室、总装备部电磁兼容及防护技术专业组、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：4
- 文件大小：1374k
- 原文格式：D
- 会议级别：全国
摘要
本文研究了Ta N薄膜在微波薄膜匹配负载器件中的应用。利用Ta N薄膜设计了工作频率为DC-18GHz,承受功率10W的匹配负载1,工作频率为DC-18GHz,承受功率60W的匹配负载2,以及工作频率为30-35GHz,承受功率为100W的高频高功率匹配负载3。采用磁控溅射制备了Ta N电阻膜,采用掩膜图形化技术制备了所设计的薄膜匹配负载器件。测试结果表明,三款器件的电压驻波比在各自工作频率范围内均小于1.3,和仿真结果基本一致。同时对器件3测试了其功率负载能力,在加载功率100W,加载时间60分钟后,器件表面最高温度为107°C,匹配负载的电阻值变化了1.4%,表明所制备的负载器件具有良好的功率承载能力。
The applications of Ta N film in microwave thin film resistance terminations had been studied in this work. Three film resistance terminations had been designed with Ta N film. The resistance termination 1 operates at DC-18 GHz with 10 W applied power. The resistance termination 2 operates at DC-18 GHz with 60 W applied power and the resistance termination 3 operates at 30-35 GHz with 100 W applied power. The designed Ta N thin film terminations had been fabricated by magnetron sputtering and mask pattern technique. The measurement results show that the VSWR of three terminations is less than 1.3 within the operating frequency range, which were agreed with the simulations results. Power handling capacity is tested on termination 3. After 100 W appled power with 60 minutes, the maximum surface temperature of the Ta N thin film termination is about 107 °C. The variation of the resistance is only 1.4%, which show that the prepared Ta N film terminations can work well with the applied power.
The applications of Ta N film in microwave thin film resistance terminations had been studied in this work. Three film resistance terminations had been designed with Ta N film. The resistance termination 1 operates at DC-18 GHz with 10 W applied power. The resistance termination 2 operates at DC-18 GHz with 60 W applied power and the resistance termination 3 operates at 30-35 GHz with 100 W applied power. The designed Ta N thin film terminations had been fabricated by magnetron sputtering and mask pattern technique. The measurement results show that the VSWR of three terminations is less than 1.3 within the operating frequency range, which were agreed with the simulations results. Power handling capacity is tested on termination 3. After 100 W appled power with 60 minutes, the maximum surface temperature of the Ta N thin film termination is about 107 °C. The variation of the resistance is only 1.4%, which show that the prepared Ta N film terminations can work well with the applied power.
引文
[1]BENITO L B,JOSE O R,INIGO M F.Design and implementation of DC-20GHz lumped resistor matched loads for planar microwave circuits[J].IEEE Microwave Theory Tech,2009,57(10):2439-2443.
[2]司旭,张万里,蒋洪川,彭斌,王超杰,李言荣.DC-18GHz微波功率薄膜电阻器的设计及制作[J].微波学报,2011,2,74-77
[3]WANG Xiuyu,ZHANG Zhisheng,BAI Tian,et al.Thin film chip resistors with high resistance and low temperature coefficient of resistance[J].Trans.Tianjin Univ,2010,16:348-353.
[4]王磊.Ta N薄膜及高频大功率薄膜负载设计与制备研究[D].成都:电子科技大学2013.
[5]王超杰.Ta N薄膜材料及在微波功率薄膜电阻器中的应用研究[D].成都:电子科技大学2010.
[6]王子宇,张肇仪,徐承和等译.射频电路设计-理论与应用[M].北京:电子工业出版社,2002,7-12
[7]武军伟,龚子平,万显荣,柯亨玉.基于简化实频方法的宽带天线阻抗匹配网络设计[J],电波科学学报.Vol.26,No,2,2011
[8]Georgakopoulos S V,Morelli J.Design of High Power Microwave Miniaturized Terminations[A].Electronic Components and Technology Conference[C].2005,772-775.
[2]司旭,张万里,蒋洪川,彭斌,王超杰,李言荣.DC-18GHz微波功率薄膜电阻器的设计及制作[J].微波学报,2011,2,74-77
[3]WANG Xiuyu,ZHANG Zhisheng,BAI Tian,et al.Thin film chip resistors with high resistance and low temperature coefficient of resistance[J].Trans.Tianjin Univ,2010,16:348-353.
[4]王磊.Ta N薄膜及高频大功率薄膜负载设计与制备研究[D].成都:电子科技大学2013.
[5]王超杰.Ta N薄膜材料及在微波功率薄膜电阻器中的应用研究[D].成都:电子科技大学2010.
[6]王子宇,张肇仪,徐承和等译.射频电路设计-理论与应用[M].北京:电子工业出版社,2002,7-12
[7]武军伟,龚子平,万显荣,柯亨玉.基于简化实频方法的宽带天线阻抗匹配网络设计[J],电波科学学报.Vol.26,No,2,2011
[8]Georgakopoulos S V,Morelli J.Design of High Power Microwave Miniaturized Terminations[A].Electronic Components and Technology Conference[C].2005,772-775.