1.8MeV电子辐照AlGaN基p-i-n日盲型光探测器的辐射效应研究
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- 英文论文题名：1.8MeV electron radiation effects on AlGaN p-i-n solar-blind ultraviolet light detector
- 论文作者：李豫东 ; 郭旗 ; 罗木昌 ; 张孝富 ; 文林 ; 汪波 ; Ma li-ya ; Shen Zhi-hui ; Wang Hai-Jiao
- 英文论文作者：Li Yu-dong ; Guo Qi ; Wang Bo ; Wen Lin ; Luo Mu-chang ; Ma li-ya ; Shen Zhi-hui ; Wang Hai-Jiao ; Key Laboratory of Functional Materials and Devices under Special Environments ; CAS. ; Xinjiang Key Laboratory of Electric Information Materials and Devices ; Xinjiang Technical Institute of Physics and Chemistry ; CAS. ; Graduate University of Chinese Academy of Sciences ; Chongqing Optoelectronics Research Institute
- 年：2014
- 作者机构：中国科学院特殊环境功能材料与器件重点实验室;新疆电子信息材料与器件重点实验室;中国科学院新疆理化技术研究所;重庆光电技术研究所;Graduate University of Chinese Academy of Sciences;
- 论文关键词：AlGaN日盲型光探测器 ; 电子辐照 ; I-V特性 ; C-V特性
- 英文论文关键词：AlGaN solar-blind ultraviolet light detector ; electron irradiation ; I-V characteristics ; C-V characteristics
- 会议召开时间：2014-08-13
- 会议录名称：第十七届全国核电子学与核探测技术学术年会论文集
- 语种：中文
- 分类号：TL81
- 学会代码：HDZX
- 会议名称：第十七届全国核电子学与核探测技术学术年会
- 会议地点：中国甘肃兰州
- 主办单位：中国电子学会、中国核学会核电子学与核探测技术分会
- 学会名称：中国电子学会核电子学与核探测技术分会
- 页数：6
- 文件大小：550k
- 原文格式：D
- 会议级别：全国
摘要
本文研究了1.8MeV电子束辐照下,高铝组分Al_(0.5)Ga_(0.5)N基p-i-n日盲型光探测器的辐射效应,获得了器件的I-V特性和C-V特性受辐照后的变化关系,分析了器件参数的退化机理。试验发现器件受电子辐照后耗尽区的复合电流显著退化,尤其是当辐照剂量达到10~(16)e/cm~2时,器件的复合电流迅速增大,试验中还观察到了反向击穿电压和暗电流具有类似的退化情况。对于器件的C-V特性,随着电子辐照剂量的增大,电容逐渐增大。分析认为器件参数的退化主要是由于电子辐照在材料中引入的浅缺陷能级造成。
1.8MeV electron irradiation induced degradation of electrical characteristics of high Al content Al_(0.5)Ga_(0.5)N solar-blind light detectors were compared before and after irradiation. The recombination current in the low-level injection region did not see significant increase until the electron fluence up to 10~(16)e/cm~(-2). The reversed breakdown voltage and the dark current had similar degradation tendency with the recombination current. With respect to the capacitance-voltage characteristics, the capacitance of the detector increased obviously with the growth of the electron dose. These degradation can be attributed to the shallow levels near the dopant levels in the materials.
1.8MeV electron irradiation induced degradation of electrical characteristics of high Al content Al_(0.5)Ga_(0.5)N solar-blind light detectors were compared before and after irradiation. The recombination current in the low-level injection region did not see significant increase until the electron fluence up to 10~(16)e/cm~(-2). The reversed breakdown voltage and the dark current had similar degradation tendency with the recombination current. With respect to the capacitance-voltage characteristics, the capacitance of the detector increased obviously with the growth of the electron dose. These degradation can be attributed to the shallow levels near the dopant levels in the materials.
引文
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[11]Liu Chang,Yuan Jing,Zhong Zhiqing,et al.Effects of Electron Irradiation on n-Ga N Schottky Barrier UV Detector.Semiconductor Optoelectronics 2005;26(1):26.
[12]W.Shockley and W.T.Read.Statistics of the Recombinations of Holes and Electrons.Phys.Rev.1952;87(5):835.
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[2]C.E.Kolb,S.B.Ryali,and J.C.Wormhoudt.The chemical physics of ultraviolet plume signatures.Proc.SPIE 1988;932:2.
[3]H.Morkoc.GaN-based modulation-doped FETs and UV detectors.Naval Research Reviews1999;51(1):26.
[4]V.V.Kuryatkov,B.A.Borisov and S.A.Nikishin et al.247 nm solar-blind ultraviolet p-i-n photodetector.J.Appl.Phys.2006;100:096104.
[5]Necmi Biyikli,Tolga Kartaloglu,Orhan Aytur,Ibrahim Kimukin and Ekmel Ozbay.High-Performance Solar-Blind Al Ga N Schottky Photodiodes.MRS Internet J.Nitride Semicond.Res.2003;8:2.
[6]Ryan Mc Clintock,Peter Sandvik,Kan Mi,Fatemeh Shahedipour,Alireza Yasan et al.AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications.Proc.SPIE 2011;4288:219-229.
[7]Patrick Kung,Alireza Yasan,Ryan Mc Clintock,Shaban Darvish,Kan Mi et al.Future of AlxGa1-xN Materials and Device Technology for Ultraviolet Photodetectors.Proc.SPIE2002;4650:199.
[8]S.A.Goodman,F.D.Auret,F.K.Koschnick,et al.Radiation induced defects in MOVPE grown n-Ga N.Materials Science and Engineering B2000;71:100–103.
[9]D.C.Look,D.C.Reynolds,Z.-Q.Fang,et al.Point defect characterization of Ga N and Zn O.Materials Science and Engineering B1999;66:30–32.
[10]Bai Y,Shao X M,Zhang Y,et al.Effect of Electron Irradiation on the Al Ga N/Ga N P-I-N UV Detector.LASER&INFRARED 2007;37(9):867.
[11]Liu Chang,Yuan Jing,Zhong Zhiqing,et al.Effects of Electron Irradiation on n-Ga N Schottky Barrier UV Detector.Semiconductor Optoelectronics 2005;26(1):26.
[12]W.Shockley and W.T.Read.Statistics of the Recombinations of Holes and Electrons.Phys.Rev.1952;87(5):835.
[13]R.N.Hall.Electron-hole recombination in germanium.Phys.Rev.1952;87(2):387.